SCMOS1 Technology 80C32E/80C52E Microcontrollers Tolerance Radiation

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SCMOS1 Technology 80C32E/80C52E Microcontrollers Tolerance Radiation

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SCMOS1 Technology 80C32E/80C52E Microcontrollers Tolerance Radiation
Abstract
radiation tolerant version 8-bit micro controller 80C32E/80C52E been tested against major concerns outer space environment, total dose heavy ions. 30Krad(Si), 30MHz latch-up immunity well within requirements major space airborne applications. space procurement, detail specification including post radiation limits available from European Space Agency.
Introduction
answer high performance space applications, TEMIC introduces radiation tolerant version 8-bit micro Controller 80C32E. cooperation with French space agency (CNES), evaluation product space grade been conducted. This includes radiation tolerance assessment covering both total dose heavy ions testing. product, validated space 30MHz, offers attractive DUAL solution manufactured with Radiation tolerant version TEMIC 0.8µm CMOS technology.
Characteristics
TEMIC 80C32E/80C52E high performance CMOS versions 8032 8052 NMOS single chip micro Controllers. fully static design 80C32E allows reduce system power consumption bringing clock frequency down value, even zero, without loss data [1]. addition features NMOS 8052, 80C52E software-selectable modes reduced activity further reduction power consumption. idle mode frozen while RAM, timers, serial port interrupt system continue function. power down mode saved other functions inoperative. 80C32E identical 80C52E except that on-chip ROM. 80C52E/80C32E manufactured using Radiation Tolerant version 0.8µm CMOS technology which allows them from with 80C32E/80C52E 100% processed according military ESA/SCC 9000 rules. Thus, they ideally suited military and/or space applications requiring highest level performance/reliability.
Features
Power control modes bytes Kbytes (80C52) programmable lines Three timer/counters program memory space data memory space Fully static design 0.8µm CMOS Radiation Tolerant process Boolean processor interrupt sources Programmable serial port Temperature range -55°C +125°C 2.7V operation package delivery
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Electrical Result
Electrical characterization done verify relevancy data sheets military temperature range [2]. synthesis this first investigation listed table Table Significant electrical results
Parameter
Fmax Idle
with comparison results gathered standard parts (worst case results given)
version
1,19 0.1V 30,5 27,3 7,05
version
1,17 0,17 32,8 26,9
Unit
limits
Irradiation Testing
Because 80C32E proposed space applications, evaluation radiation hardness necessary. Natural environment encountered airborne equipment composed mainly energetic particles. Interaction these particles with constituent technology lead principally phenomenon
Long term drift basic parameters ionization processes Prompt ionization heavy particles hitting silicon.
Krad(Si) respectively (0.39 rad(Si)/sec 0.43 rad(Si)/sec dose rates). Immediately after final exposure, parts submitted electrical test. Then, annealing sequence including both ambient high temperature bake done determine presence Post Irradiation Effects (PIE). Parts static biased during whole sequence. During transport from irradiation chamber test area, parts powered placed conductive foam. Detail results available under request factory. This report describes only significant parameter drifts. notice that only power supply current affected ionization level dose tested. This mainly charge trapping oxide (usual CMOS technology) strongly dependent dose rate used during experiment [3]. Other parameters, such input output compatibility, vary 35Krad(Si). This related hardness gate oxide.
Irradiation testing involving various equipment necessary assess degradation mechanisms.
5.1. Total Dose Testing
Total dose hardness 80C32E controlled according requirements existing norms (ESA/SCC 22900 1019). These standards require gamma rays from Cobalt used. groups parts irradiated simultaneously under
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Figure IDLE current versus dose variation stays relatively (1mA after 40Krad(Si)). This value acceptable case. Figures illustrate stability input output parameters over 40Krad(Si) tested. Figure Input Voltage (drift) versus dose
Figure POWER DOWN current versus dose
Figure Output Voltage (drift) versus dose
Figure indicates values Idle current over total dose range tested. significant variation observed. limit still valid after 35-40Krad(Si) irradiation. Figure gives evolution current measured power down mode. This most sensitive parameter
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5.2. Annealing
parameters recover their original value after high temperature annealing. This confirms negative influence dose rate (Charge trapping, interface states generation). Figure gives variation power down current during after irradiation 40Krad(Si). Figure Evolution during after irradiation 40Krad(Si) necessary characterize 80C32E' sensitivity against heavy ions; Single Event Upset (SEU) other LATCH-UP sensitivity. complete report available description campaigns. Figure gives example sensitivity internal memory 80C32E (worse case). This sensitivity vary depending block tested (cf. [5]). LATCH-UP observed during tests maximum MeV/(mg/cm table internal 80C32E cross section values (per bit). Figure Heavy internal sensitivity
5.3. Heavy Testing
simulation very energetic particles requires very powerful equipment. campaigns Table 80C32E internal cross section
LETeff MeV/(mg/cm2)
12,7 25,4
FLUENCE p/cm2
987415 175573 187946 462550 75554 178701 29965 19665
upset
cm2/bit
9,40E-09 1,87E-08 2,73E-08 7,18E-08 5,50E-08 5,12E-08 2,77E-07 1,12E-07
Table gives event rate estimation internal memory (worst case) three typical orbits
(Geostationary (36000 km), Polar (SPOT) (Hermes 28°)).
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Table MTBF estimation worst case
MTBF (day) 62.8
POLAR
2760
Conclusion
80C32E electrical radiation data demonstrate relevancy product space applications. Capability 30MHz, 30Krad(Si) Latch-up immunity suit well requirements major airborne equipment. Space detail specification available (SCC n°9521/002) from European Space Agency.
References
80C32E/80C52E Data sheets Electrical Characterization report, MHS, July "Investigation dose rate effects submicronic CMOS technology", IEEE "Test ions lourds 80C52E MHS", CNES, June
MATRA Rev. Jan.97)

SCMOS1 Technology 80C32E/80C52E Microcontrollers Tolerance Radiation

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