IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard
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IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET TECHNOLOGY THRU-HOLE (MO-036AB)
Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si) 0.29 300K Rads (Si) 0.29 100K Rads (Si) 0.96 300K Rads (Si) 0.96 CHANNEL 1.6A 1.6A -0.96A -0.96A
MO-036AB
International Rectifier's RAD-HardHEXFET® MOSFET Technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination RDS(on) gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Proton Tolerant Simple Drive Requirements Ease Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight footnotes refer last page
Pre-Irradiation
N-Channel
0.011 0.14
P-Channel
-0.96 -0.6 -3.84
0.011
Units
W/°C
-0.96 0.14
V/ns
(0.63 in./1.6 from case 10s) (Typical)
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IRHG567110
Pre-Irradiation
Electrical Characteristics Each N-Channel Device 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.14 0.29 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 1.0A VGS, 1.0mA 15V, 1.0A VDS= 80V, VGS= 80V, =125°C -20V =12V, 1.6A, 50V, 1.6A, =12V,
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from Drain lead (6mm /0.25in.
from package) Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Drain
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1.0MHz
Source-Drain Diode Ratings Characteristics (Per Die)
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 1.6A, 25°C, 1.6A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance (Per Die)
Parameter
RthJA Junction-to-Ambient
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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Pre-Irradiation
IRHG567110
Electrical Characteristics Each P-Channel Device 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
-100 -2.0
Units
-0.14 0.96 -4.0 -100 13.4 V/°C
Test Conditions
-1.0mA Reference 25°C, -1.0mA -12V, -0.6A VGS, -1.0mA -15V, -0.6A VDS= -80V, VGS= -80V, =125°C -12V, -0.96A, -50V -50V, -0.96A, -12V,
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from Drain lead (6mm /0.25in.
from package) Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Drain
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1.0MHz
Source-Drain Diode Ratings Characteristics (Per Die)
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-0.96 -3.84 -5.0
Test Conditions
25°C, -0.96A, 25°C, -0.96A, di/dt -100A/µs -25V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance (Per Die)
Parameter
RthJA Junction-to-Ambient
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice Saber models available Website. footnotes refer last page
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IRHG567110
Radiation Characteristics Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-39 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics Each N-Channel Device 25°C, Post Total Dose Irradiation
Parameter
BVDSS GS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (MO-036AB) Diode Forward Voltage
100K Rads(Si)1
300K Rads (Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA VDS= 80V, 12V, 1.0A 12V, 1.0A =1.6A
-100 0.226 0.29
-100 0.246 0.31
Part number IRHG567110 Part number IRHG563110
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area (Per Die)
MeV/(mg/cm2)) 36.7 59.8 Energy (MeV) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-12.5V @VGS=-15V @VGS=-20V 39.5 32.5
Single Event Effect, Safe Operating Area
footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHG567110
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-39 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics Each P-Channel Device 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (MO-036AB) Diode Forward Voltage
100K Rads(Si)1
300K Rads (Si)2
Units
Test Conditions
-1.0mA VDS, -1.0mA -20V VDS=-80V, -12V, =-0.6A -12V, =-0.6A -0.96A
-100 -2.0
-4.0 -100 0.916 0.96 -3.5
-100 -2.0
-4.0 -100 0.936 0.98 -3.5
Part number IRHG567110 Part number IRHG563110
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
Table Single Event Effect Safe Operating Area (Per Die)
MeV/(mg/cm2)) 37.3 59.9 82.3 Energy (MeV) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V -100 36.8 -100 -100 -100 -100 -100 32.7 -100 -100 -100 -100 28.5 -100 -100 -100
-120 -100
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHG567110 N-Channel Q1,Q3
Pre-Irradiation
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
1.6A
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation N-Channel Q1,Q3
IRHG567110
Gate-to-Source Voltage
Capacitance (pF)
1MHz Ciss SHORTED Crss Coss
1.6A
Ciss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
OPERATION THIS AREA LIMITED RDS(on)
Reverse Drain Current
Drain-to-Source Current
25°C 150°C Single Pulse
10ms
,Source-to-Drain Voltage
1000
Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHG567110 N-Channel Q1,Q3
Pre-Irradiation
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
0.50
Thermal Response thJA
0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001
Notes: Duty factor Peak thJA 1000
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Pre-Irradiation N-Channel Q1,Q3
Single Pulse Avalanche Energy (mJ)
IRHG567110
0.7A 1.0A BOTTOM 1.6A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature(
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHG567110 P-Channel Q2,Q4
Pre-Irradiation
-5.0V
Drain-to-Source Current
Drain-to-Source Current
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
-0.96A
Drain-to-Source Current
-50V 20µs PULSE WIDTH
-12V
-VGS Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation P-Channel Q2,Q4
IRHG567110
-VGS Gate-to-Source Voltage
Ciss Crss Coss 1MHz SHORTED
-0.96A
Capacitance (pF)
=-80V =-50V =-20V
Ciss
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
OPERATION THIS AREA LIMITED DS(on)
-ISD Reverse Drain Current
Drain-to-Source Current
25°C 150°C Single Pulse
10ms
1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-toSource Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHG567110 P-Channel Q2,Q4
Pre-Irradiation
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
0.50
Thermal Response thJA
0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001
Notes: Duty factor Peak thJA
1000
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Pre-Irradiation P-Channel Q2,Q4
IRHG567110
Single Pulse Avalanche Energy (mJ)
-20V
-0.4A -0.6A BOTTOM -0.96A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-12V
.2µF .3µF
-12V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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D.U.T.
IRHG567110
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited
maximum junction temperature. 25V, starting 25°C, 100mH, Peak 1.6A, 1.6A, di/dt 340A/µs, 100V, 150°C Pulse width Duty Cycle
Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition 25V, starting 25°C, 430mH, Peak 0.96A, -12V 0.96A, di/dt 290A/µs, -100V, 150°C
Case Outline Dimensions MO-036AB
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 09/01
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