DESIG MENDED General Purpose Transistor Arrays Descript
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CA3018, CA3018A
DESIG
MENDED
General Purpose Transistor Arrays
Description
CA3018 CA3018A consist four general purpose silicon transistors common monolithic substrate. four transistors connected Darlington configuration. substrate connected separate terminal maximum flexibility. transistors CA3018 CA3018A well suited wide variety applications power systems through range. They used discrete transistors conventional circuits addition they provide advantages close electrical thermal matching inherent integrated circuit construction. CA3018A similar CA3018 features tighter control current gain, leakage, offset parameters making suitable more critical applications requiring premium performance.
Features
Matched Monolithic General Purpose Transistors Matched .±10% Matched CA3018A ±2mV CA3018 ±5mV Operation From 120MHz Wide Operating Current Range CA3018A Performance from 10µA 10mA Characteristics Controlled
Noise Figure 3.2dB (Typ) 1kHz Full Military Temperature Range -55oC 125oC
Applications
Isolated Transistors Darlington Connected Transistor Pair Power Applications Frequencies from through Range Custom Designed Differential Amplifiers Temperature Compensated Amplifiers Application Note, AN5296 "Application CA3018 Integrated Circuit Transistor Array" Suggested Applications
Ordering Information
PART NUMBER CA3018 CA3018A TEMP. RANGE (oC) PACKAGE Metal Metal PKG. T12.B T12.B
Pinout
CA3018, CA3018A (METAL CAN) VIEW
SUBSTRATE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1996
File Number
338.3
CA3018, CA3018A
Absolute Maximum Ratings
CA3018 Collector-to-Emitter Voltage, VCEO Collector-to-Base Voltage, VCBO Collector-to-Substrate Voltage, VCIO (Note Emitter-to-Base Voltage, VEBO Collector Current, 50mA CA3018A 50mA
Thermal Information
Thermal Resistance (Typical, Note (oC/W) (oC/W) Metal Package Maximum Power Dissipation (Any Transistor) 300mW Maximum Junction Temperature 175oC Maximum Storage Temperature Range -65oC 150oC Maximum Lead Temperature (Soldering 10s) 300oC
Operating Conditions
Temperature Range -55oC 125oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: collector each transistor CA3018 CA3018A isolated from substrate integral diode. substrate (Terminal must connected most negative point external circuit maintain isolation between transistors provide normal transistor action. measured with component mounted evaluation board free air.
Electrical Specifications
25oC CA3018 CA3018A UNITS
PARAMETER CHARACTERISTICS Collector Cutoff Current (Figure Collector Cutoff Current (Figure Collector Cutoff Current Darlington Pair Collector-to-Emitter Breakdown Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Substrate Breakdown Voltage Collector-to-Emitter Saturation Voltage Forward Current Transfer Ratio (Note (Figure
SYMBOL
TEST CONDITIONS
ICBO ICEO ICEOD V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CIO VCES
10V, 10V, 10V, 1mA, 10µA, 10µA, 10µA, 1mA, 10mA 10mA 10µA
0.002 Fig. 0.23 0.97
0.002 Fig. 0.23 0.97
Magnitude Static-Beta Ratio (Isolated Transistors (Figure Forward Current Transfer Ratio Darlington Pair (Figure Base-to-Emitter Voltage (Figure Input Offset Voltage (Figures hFED
100µA 10mA
1500
5400 0.715 0.800 0.48
2000 1000 0.600
5400 2800 0.715 0.800 0.48
0.800 0.900
CA3018, CA3018A
Electrical Specifications
25oC (Continued) CA3018 PARAMETER Temperature Coefficient: Base-to-Emitter Voltage (Figure Base (Q3)-to-Emitter (Q4) Voltage Darlington Pair (Figure Temperature Coefficient: Base-to-Emitter Voltage Darlington Pair (Figure Temperature Coefficient: Magnitude Input Offset Voltage DYNAMIC CHARACTERISTICS Frequency Noise Figure (Figures Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure Short Circuit Input Impedance (Figure Open Circuit Output Impedance (Figure Open Circuit Reverse Voltage Transfer Ratio (Figure Admittance Characteristics Forward Transfer Admittance (Figure Input Admittance (Figure Output Admittance (Figure Reverse Transfer Admittance (Figure Gain Bandwidth Product (Figure Emitter-to-Base Capacitance Collector-to-Base Capacitance Collector-to-Substrate Capacitance NOTE: Actual forcing current emitter this test. 1MHz, 1MHz, 1MHz, 1MHz, 0.58 j1.5 j0.04 0.001 j0.03 j1.5 j0.04 0.001 j0.03 0.58 1kHz, 1kHz, 1kHz, 1kHz, 15.6 10-4 15.6 10-4 1kHz, 100µA, Source Resistance 3.25 3.25 SYMBOL VBED (V9-1) TEST CONDITIONS -1.9 CA3018A -1.9 UNITS mV/oC
10mA
1.46 1.32
1.10
1.46 1.32
1.60 1.50
mV/oC
-6V,
µV/oC
Figure
CA3018, CA3018A Typical Performance Curves
COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA) 10-1 10-2 10-3 AMBIENT TEMPERATURE (oC) AMBIENT TEMPERATURE (oC)
10-1 10-2 10-3 10-4
FIGURE TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT TEMPERATURE
0.01 25oC
FIGURE TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT TEMPERATURE
STATIC FORWARD CURRENT TRANSFER RATIO DARLINGTON PAIR (hFED) 8000 7000 6000 5000 4000 3000 2000 1000 EMITTER CURRENT (mA) 25oC
STATIC FORWARD CURRENT TRANSFER RATIO (hFE)
BETA RATIO
EMITTER CURRENT (mA)
FIGURE TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO BETA RATIO TRANSISTORS EMITTER CURRENT
25oC
FIGURE TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO DARLINGTON CONNECTED TRANSISTORS EMITTER CURRENT
INPUT OFFSET VOLTAGE (mV)
BASE-TO-EMITTER VOLTAGE
BASE-TO-EMITTER VOLTAGE 0.5mA
|VBE1 VBE2| 0.01
EMITTER CURRENT (mA)
AMBIENT TEMPERATURE (oC)
FIGURE TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTIC INPUT OFFSET VOLTAGE EMITTER CURRENT
FIGURE TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC EACH TRANSISTOR TEMPERATURE
CA3018, CA3018A Typical Performance Curves
BASE-TO-EMITTER VOLTAGE DARLINGTON PAIR OFFSET VOLTAGE (mV) 0.75 0.50 0.25 0.1mA 10mA
(Continued)
25oC
AMBIENT TEMPERATURE (oC) EMITTER CURRENT (mA)
FIGURE TYPICAL OFFSET VOLTAGE CHARACTERISTIC TEMPERATURE
FIGURE TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC DARLINGTON PAIR EMITTER CURRENT
BASE-TO-EMITTER VOLTAGE DARLINGTON PAIR 1.75 NOISE FIGURE (dB) 1.50 0.5mA 1.25
25oC
0.1kHz 1kHz
10kHz
0.75 AMBIENT TEMPERATURE (oC) 0.01 COLLECTOR CURRENT (mA)
FIGURE TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC DARLINGTON PAIR TEMPERATURE
FIGURE NOISE FIGURE COLLECTOR CURRENT
1000 25oC NOISE FIGURE (dB)
10000 25oC
NOISE FIGURE (dB)
0.1kHz 1kHz
0.1kHz 1kHz 10kHz
10kHz
0.01 COLLECTOR CURRENT (mA)
0.01
COLLECTOR CURRENT (mA)
FIGURE NOISE FIGURE COLLECTOR CURRENT
FIGURE NOISE FIGURE COLLECTOR CURRENT
CA3018, CA3018A Typical Performance Curves
NORMALIZED PARAMETERS 1kHz 25oC
(Continued)
FORWARD TRANSFER CONDUCTANCE (gFE) SUSCEPTANCE (bFE) (mS)
3.5k 1.88 10-4 15.6µS
COMMON EMITTER CIRCUIT, BASE INPUT 25oC,
0.01 COLLECTOR CURRENT (mA)
FREQUENCY (MHz)
FIGURE PARAMETERS COLLECTOR CURRENT
FIGURE FORWARD TRANSFER ADMITTANCE (YFE)
FREQUENCY (MHz) OUTPUT CONDUCTANCE (gOE) SUSCEPTANCE (bOE) (mS) COMMON EMITTER CIRCUIT, BASE INPUT 25oC,
COMMON EMITTER CIRCUIT, BASE INPUT 25oC,
INPUT CONDUCTANCE (gIE) SUSCEPTANCE (bIE) (mS)
FREQUENCY (MHz)
FIGURE INPUT ADMITTANCE (YIE)
FIGURE OUTPUT ADMITTANCE (YOE)
REVERSE TRANSFER CONDUCTANCE (gRE) SUSCEPTANCE (bRE) (mS)
GAIN BANDWIDTH PRODUCT (MHz)
COMMON EMITTER CIRCUIT, BASE INPUT 25oC, SMALL FREQUENCIES LESS THAN 500MHz
1000
25oC
-0.5 -1.0
-1.5 -2.0 FREQUENCY (MHz)
COLLECTOR CURRENT (mA)
FIGURE REVERSE TRANSFER ADMITTANCE (YRE)
FIGURE TYPICAL GAIN BANDWIDTH PRODUCT (fT) COLLECTOR CURRENT
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