CMOS 4-Bit Full Adder With Parallel Carry Pinout CD4008BMS V
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CD4008BMS
CMOS 4-Bit Full Adder With Parallel Carry
Pinout
CD4008BMS VIEW
November 1994
Features
High-Voltage Type (20V Rating) Outputs Plus Parallel Look-ahead Carry-Output High-Speed Operation In-To-Sum Out, 160ns Typ; Carry In-To-Carry Out, Typ. 10V, CL=50pF Standardized Symmetrical Output Characteristics 100% Tested Quiescent Current Maximum Input Current Over Full Package-Temperature Range; 100nA 25oC Noise Margin (Over Full Package Temperature Range): 2.5V Parametric Ratings Meets Requirements JEDEC Tentative Standard 13B, "Standard Specifications Description Series CMOS Devices"
Logic Diagram
HIGH SPEED CARRY (CARRY-OUT)
Applications
Binary Addition/Arithmetic Units
Description
CD4008BMS types consist four full adder stages with fast look ahead carry provision from stage stage. Circuitry included provide fast "parallel-carry-out" permit high-speed operation arithmetic sections using several CD4008BMS's. CD4008BMS inputs include four sets bits added, addition "Carry from previous section. CD4008BMS outputs include four bits, addition high speed "parallel-carryout" which utilized succeeding CD4008BMS section. CD4008BMS supplied these 16-lead outline packages: Braze Seal Frit Seal Ceramic Flatpack
(CARRY-IN) *ALL INPUTS PROTECTED CMOS PROTECTION NETWORK
TRUTH TABLE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1992
File Number
3292
7-675
Specifications CD4008BMS
Absolute Maximum Ratings
Supply Voltage Range, (VDD) -0.5V +20V (Voltage Referenced Terminals) Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Operating Temperature Range -55oC +125oC Package Types Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (During Soldering) +265oC Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case Maximum
Reliability Information
Thermal Resistance Ceramic FRIT Package 80oC/W 20oC/W Flatpack Package 70oC/W 20oC/W Maximum Package Power Dissipation (PD) +125 -55oC +100oC (Package Type 500mW +100oC +125oC (Package Type Derate Linearity 12mW/oC 200mW Device Dissipation Output Transistor 100mW Full Package Temperature Range (All Package Types) Junction Temperature +175oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS 18V, Input Leakage Current Input Leakage Current Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Threshold Voltage Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH 15V, Load 15V, Load (Note VOUT 0.4V 10V, VOUT 0.5V 15V, VOUT 1.5V VOUT 4.6V VOUT 2.5V 10V, VOUT 9.5V 15V, VOUT 13.5V 10V, -10µA 10µA 2.8V, 20V, 18V, Input Voltage (Note Input Voltage High (Note Input Voltage (Note Input Voltage High (Note 4.5V, 0.5V 4.5V, 0.5V 15V, 13.5V, 1.5V 15V, 13.5V, 1.5V LIMITS TEMPERATURE +125oC -55oC +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC
PARAMETER Supply Current
SYMBOL
CONDITIONS (NOTE 20V,
-100 -1000 -100
1000 1000 -0.53 -1.8 -1.4 -3.5 -0.7
UNITS
+25oC, +125oC, -55oC 14.95 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 0.53 -2.8
VDD/2 VDD/2
NOTES: voltages referenced device GND, 100% testing being implemented. Go/No test with limits applied inputs
accuracy, voltage measured differentially VDD. Limit 0.050V max.
7-676
Specifications CD4008BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TEMPERATURE +25oC +125oC, -55oC LIMITS 1080 UNITS
PARAMETER Propagation Delay Propagation Delay Carry Propagation Delay Carry Propagation Delay Carry Carry Transition Time
SYMBOL TPHL1 TPLH1 TPHL2 TPLH2 TPHL3 TPLH3 TPHL4 TPLH4 TTHL TTLH
CONDITIONS (NOTE
+25oC +125oC, -55oC
+25oC +125oC, -55oC +25oC +125oC, -55oC
+25oC +125oC, -55oC
NOTES: 50pF, 200K, Input 20ns. -55oC +125oC limits guaranteed, 100% testing being implemented. TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE -55oC, +25oC +125oC 10V, +125oC 15V, -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) IOL5 Load 10V, Load Load 10V, Load VOUT 0.4V +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 10V, VOUT 0.5V +125oC -55oC Output Current (Sink) IOL15 15V, VOUT 1.5V +125oC -55oC Output Current (Source) IOH5A VOUT 4.6V +125oC -55oC Output Current (Source) IOH5B VOUT 2.5V +125oC -55oC Output Current (Source) IOH10 10V, VOUT 9.5V +125oC -55oC
4.95 9.95 0.36 0.64
-0.36 -0.64 -1.15 -2.0 -0.9 -1.6
UNITS
7-677
Specifications CD4008BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Output Current (Source) SYMBOL IOH15 CONDITIONS =15V, VOUT 13.5V NOTES TEMPERATURE +125oC Input Voltage Input Voltage High Propagation Delay Propagation Delay Carry Propagation Delay Carry Propagation Delay Carry Carry Transition Time TPHL1 TPLH1 TPHL2 TPLH2 TPLH3 TPHL3 TPHL4 TPLH4 TTHL TTLH 10V, 10V, Input +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC
-2.4 -4.2
UNITS
+25oC +25oC +25oC +25oC
Input Capacitance NOTES:
voltages referenced device GND. parameters listed Table controlled design process directly tested. These parameters characterized initial design release upon design changes which would affect these characteristics. 50pF, 200K, Input 20ns.
TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current Threshold Voltage Threshold Voltage Delta Threshold Voltage Threshold Voltage Delta Functional SYMBOL VNTH VNTH VPTH VPTH CONDITIONS 20V, 10V, -10µA 10V, -10µA 10µA 10µA 18V, Propagation Delay Time TPHL TPLH +25oC NOTES TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC -2.8 VDD/2 -0.2 VDD/2 1.35 +25oC Limit UNITS
NOTES: voltages referenced device GND. 50pF, 200K, Input 20ns.
Table +25oC limit. Read Record
7-678
Specifications CD4008BMS
TABLE BURN-IN LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current MSI-2 Output Current (Sink) Output Current (Source) SYMBOL IOL5 IOH5A 1.0µA Pre-Test Reading Pre-Test Reading DELTA LIMIT
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test (Post Burn-In) Interim Test (Post Burn-In) (Note Interim Test (Post Burn-In) (Note Final Test Group Group Subgroup Subgroup Group MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups Subgroups IDD, IOL5, IOH5A READ RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
NOTE: Parameteric, Functional; Cumulative Static
TABLE TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD POST-IRRAD Table READ RECORD PRE-IRRAD POST-IRRAD Table
CONFORMANCE GROUPS Group Subgroup
TABLE BURN-IN IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In Note Static Burn-In Note Dynamic BurnIn Note Irradiation Note NOTE: Each except will have series resistor 0.5V Each except will have series resistor Group Subgroup sample size dice/wafer, failures, 0.5V OPEN GROUND -0.5V 50kHz 25kHz
7-679
Specifications CD4008BMS
Typical Propagation Delay
CD4008 CD4008 CD4008 CD4008 SUMS SETTLED AFTER 345ns 2(50) 2(Ci
FIGURE PROPAGATION DELAY ADDER (10V OPERATION)
7-680
CD4008BMS Typical Performance Characteristics
SUM-IN SUM-OUT PROPAGATION DELAY TIME (tPHL, tPLH) (ns) CARRY-IN CARRY-OUT PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) +25oC AMBIENT TEMPERATURE (TA) +25oC
SUPPLY VOLTAGE (VDD)
SUPPLY VOLTAGE (VDD)
LOAD CAPACITANCE (CL) (pF)
LOAD CAPACITANCE (CL) (pF)
FIGURE TYPICAL SUM-IN SUM-OUT PROPAGATION DELAY TIME LOAD CAPACITANCE
AMBIENT TEMPERATURE (TA) +25oC
FIGURE TYPICAL CARRY-IN CARRY-OUT PROPAGATION DELAY TIME LOAD CAPACITANCE
AMBIENT TEMPERATURE (TA) +25oC SUPPLY VOLTAGE (VDD)
CARRY-IN CARRY-OUT PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
SUM-IN CARRY-OUT PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
SUPPLY VOLTAGE (VDD)
LOAD CAPACITANCE (CL) (pF)
LOAD CAPACITANCE (CL) (pF)
FIGURE TYPICAL CARRY-IN SUM-OUT PROPAGATION DELAY TIME LOAD CAPACITANCE
DRAIN-TO-SOURCE VOLTAGE (VDS) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
FIGURE TYPICAL SUM-IN CARRY-OUT PROPAGATION DELAY TIME LOAD CAPACITANCE
DRAIN-TO-SOURCE VOLTAGE (VDS)
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
GATE-TO-SOURCE VOLTAGE (VGS)
-10V
-10V
-15V
-15V
FIGURE TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
FIGURE MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
7-681
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
AMBIENT TEMPERATURE (TA) +25oC
CD4008BMS Typical Performance Characteristics
OUTPUT (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) +25oC
(Continued)
AMBIENT TEMPERATURE (TA) +25oC
OUTPUT (SINK) CURRENT (IOL) (mA)
GATE-TO-SOURCE VOLTAGE (VGS)
15.0 GATE-TO-SOURCE VOLTAGE (VGS) 12.5 10.0
DRAIN-TO-SOURCE VOLTAGE (VDS)
DRAIN-TO-SOURCE VOLTAGE (VDS)
FIGURE TYPICAL OUTPUT (SINK) CURRENT CHARACTERISTICS
POWER DISSIPATION/PACKAGE (PD) (µW)
FIGURE MINIMUM OUTPUT (SINK) CURRENT CHARACTERISTICS
AMBIENT TEMPERATURE (TA) +25oC SUPPLY VOLTAGE (VDD)
3.5V LOAD CAPACITANCE (CL) 15pF (CL) 50pF
INPUT FREQUENCY (kHz)
FIGURE TYPICAL DISSIPATION CHARACTERISTICS
Chip Dimensions Layouts
METALLIZATION: Thickness: PASSIVATION: Silane
BOND PADS: 0.004 inches 0.004 inches THICKNESS: 0.0198 inches 0.0218 inches
Dimensions parentheses millimeters derived from basic inch dimensions indicated. Grid graduations mils (10-3 inch)
7-682
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