CMOS 18-Stage Static Register Pinout CD4006BM VIEW CLOC

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CMOS 18-Stage Static Register Pinout CD4006BM VIEW CLOC

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CD4006BMS
CMOS 18-Stage Static Register
Pinout
CD4006BM VIEW
CLOCK
November 1994
Features
High-Voltage Type (20V Rating) Fully Static Operation Shifting Rates 12MHz (typ) Permanent Register Storage with Clock Line High Information Recirculation Required 100% Tested Quiescent Current Standardized, Symmetrical Output Characteristics Parametric Ratings Maximum Input Current Over Full Package-Temperature Range; 100nA +25oC Noise Margin (Full Package-Temperature Range): 2.5V Meets Requirements JEDEC Tentative Standards 13B, "Standard Specifications Description Series CMOS Devices"
Functional Diagram
Applications
Serial Shift Registers Frequency Division Time Delay Circuits
CLOCK
STAGE LATCH
Description
CD4006BMS types composed separate shift register sections: sections four stages sections five stages with output fourth stage. Each section independent single-rail data path. common clock signal used stages. Data shifted next stages negative-going transitions clock. Through appropriate connections inputs outputs, multiple register sections stages single register sections stages implemented using CD4006BMS package. Longer shift register sections assembled using more than CD4006BMS. facilitate cascading stages when clock rise fall times slow, optional output that delayed one-half clockcycle, provided (see Truth Table Output from Term. CD4006BMS supplied these lead outline packages: Braze Seal Frit Seal Ceramic Flatpack
STAGE
STAGE
STAGE
STAGE
STAGE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
Harris Corporation 1992
File Number
3290
7-658
Specifications CD4006BMS
Absolute Maximum Ratings
Supply Voltage Range, (VDD) -0.5V +20V (Voltage Referenced Terminals) Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Operating Temperature Range -55oC +125oC Package Types Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (During Soldering) +265oC Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case Maximum
Reliability Information
Thermal Resistance Ceramic FRIT Package 80oC/W 20oC/W Flatpack Package 70oC/W 20oC/W Maximum Package Power Dissipation (PD) +125 -55oC +100oC (Package Type 500mW +100oC +125oC (Package Type Derate Linearity 12mW/oC 200mW Device Dissipation Output Transistor 100mW Full Package Temperature Range (All Package Types) Junction Temperature +175oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS 18V, Input Leakage Current Input Leakage Current Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Threshold Voltage Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH 15V, Load 15V, Load (Note VOUT 0.4V 10V, VOUT 0.5V 15V, VOUT 1.5V VOUT 4.6V VOUT 2.5V 10V, VOUT 9.5V 15V, VOUT 13.5V 10V, -10µA 10µA 2.8V, 20V, 18V, Input Voltage (Note Input Voltage High (Note Input Voltage (Note Input Voltage High (Note 4.5V, 0.5V 4.5V, 0.5V 15V, 13.5V, 1.5V 15V, 13.5V, 1.5V +25oC, +25oC, LIMITS TEMPERATURE +125 +125oC -55oC +25oC +125oC -55oC +125oC, +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC -55oC -55oC
PARAMETER Supply Current
SYMBOL
CONDITIONS (NOTE 20V,
-100 -1000 -100 14.95 0.53 -2.8
1000 1000 -0.53 -1.8 -1.4 -3.5 -0.7
UNITS
VDD/2 VDD/2
NOTES: voltages referenced device GND, 100% testing being implemented. Go/No test with limits applied inputs
accuracy, voltage measured differentially VDD. Limit 0.050V max.
7-659
Specifications CD4006BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TEMPERATURE +25oC +125oC, -55oC LIMITS 1.85 UNITS
PARAMETER Propagation Delay
SYMBOL TPHL TPLH TTHL TTLH
CONDITIONS (NOTE
Transition Time
+25oC +125oC, -55oC
Maximum Clock Input Frequency NOTES:
+25oC +125oC, -55oC
50pF, 200K, Input 20ns. 55oC +125oC limits guaranteed, 100% testing being implemented. TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE -55oC, +25oC +125oC 10V, +125oC 15V, -55oC, +25oC +125 Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) IOL5 Load 10V, Load Load 10V, Load VOUT 0.4V
4.95 9.95 0.36 0.64
-0.36 -0.64 -1.15 -2.0 -0.9 -1.6 -2.4 -4.2
UNITS
+25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC
Output Current (Sink)
IOL10
10V, VOUT 0.5V
Output Current (Sink)
IOL15
15V, VOUT 1.5V
Output Current (Source)
IOH5A
VOUT 4.6V
Output Current (Source)
IOH5B
VOUT 2.5V
Output Current (Source)
IOH10
10V, VOUT 9.5V
Output Current (Source)
IOH15
=15V, VOUT 13.5V
Input Voltage Input Voltage High
10V, 10V,
7-660
Specifications CD4006BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Propagation Delay SYMBOL TPHL TPLH TTHL TTLH CONDITIONS Minimum Clock Pulse Width Input Capacitance NOTES: voltages referenced device GND. parameters listed Table controlled design process directly tested. These parameters characterized initial design release upon design changes which would affect these characteristics. 50pF, 200K, Input 20ns. TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current Threshold Voltage Threshold Voltage Delta Threshold Voltage Threshold Voltage Delta Functional SYMBOL VNTH VNTH VPTH VPTH CONDITIONS 20V, 10V, -10µA 10V, -10µA 10µA 10µA 18V, Propagation Delay Time TPHL TPLH +25oC NOTES TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC -2.8 VDD/2 -0.2 VDD/2 1.35 +25oC Limit UNITS Input NOTES TEMPERATURE +25oC +25oC
UNITS
Transition Time
Maximum Clock Input Frequency Minimum Data Setup Time
+25oC +25oC
+25oC +25o
NOTES: voltages referenced device GND. 50pF, 200K, Input 20ns.
Table +25oC limit. Read Record
TABLE BURN-IN LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current MSI-2 Output Current (Sink) Output Current (Source) SYMBOL IOL5 IOH5A 1.0µA Pre-Test Reading Pre-Test Reading DELTA LIMIT
7-661
Specifications CD4006BMS
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test (Post Burn-In) Interim Test (Post Burn-In) (Note Interim Test (Post Burn-In) (Note Final Test Group Group Subgroup Subgroup Group MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups Subgroups IDD, IOL5, IOH5A READ RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
NOTE: Parameteric, Functional; Cumulative Static
TABLE TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD POST-IRRAD Table READ RECORD PRE-IRRAD POST-IRRAD Table
CONFORMANCE GROUPS Group Subgroup
TABLE BURN-IN IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In Note Static Burn-In Note Dynamic BurnIn Note Irradiation Note NOTE: Each except will have series resistor 0.5V Each except will have series resistor Group Subgroup sample size dice/wafer, failures, 0.5V OPEN GROUND -0.5V 50kHz 25kHz
7-662
CD4006BMS Logic Diagram Truth Table
TRUTH TABEL SHIFT REGISTER STAGE
TRUTH TABLE OUTPUT FROM TERM
STAGE
LOGIC DIAGRAM TRUTH TABLE (ONE REGISTER STAGE)
HIGH CHANGE
DON'T CARE LEVEL CHANGE
CLOCK LATCH
MORE STAGES STAGES STAGES LATCH STAGES
DETAILED LOGIC LATCH
LOGIC DIAGRAM WITH DETAIL LATCH
7-663
CD4006BMS Typical Performance Characteristics
OUTPUT (SINK) CURRENT (IOL) (mA) OUTPUT (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) +25oC AMBIENT TEMPERATURE (TA) +25oC
GATE-TO-SOURCE VOLTAGE (VGS)
15.0 GATE-TO-SOURCE VOLTAGE (VGS) 12.5 10.0
DRAIN-TO-SOURCE VOLTAGE (VDS)
DRAIN-TO-SOURCE VOLTAGE (VDS)
FIGURE TYPICAL OUTPUT (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
FIGURE MIMIMUM OUTPUT (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
-10V
-10V
-15V
-15V
FIGURE TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
FIGURE MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) +25oC SUPPLY VOLTAGE (VDD) LOAD CAPACITANCE (CL) (pF)
AMBIENT TEMPERATURE (TA) +25oC TRANSITION TIME (tTHL, tTLH) (ns)
SUPPLY VOLTAGE (VDD)
LOAD CAPACITANCE (CL) (pF)
FIGURE TYPICAL TRANSITION TIME FUNCTION LOAD CAPACITANCE
FIGURE TYPICAL PROPAGATION DELAY TIME FUNCTION LOAD CAPACITANCE
7-664
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
CD4006BMS Typical Performance Characteristics (Continued)
AMBIENT TEMPERATURE +25oC
POWER DISSIPATION (PD) (µW)
SUPPLY VOLTAGE (VDD)
50pF 15pF
INPUT FREQUENCY (fCL) (kHz)
FIGURE TYPICAL DYANAMIC POWER DISSIPATION FUNCTION CLOCK FREQUENCY
Chip Dimensions Layout
Dimensions parentheses millimeters derived from basic inch dimensions indicated. Grid graduations mils (10-3 inch)
METALLIZATION: Thickness: PASSIVATION: Silane BOND PADS:
0.004 inches 0.004 inches 0.0198 inches 0.0218 inches
THICKNESS:
7-665

CMOS 18-Stage Static Register Pinout CD4006BM VIEW CLOC

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