41,5 5,25 41,5 31,5 deep 2,8x0,5 3,35 3x5=15 26,4

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41,5 5,25 41,5 31,5 deep 2,8x0,5 3,35 3x5=15 26,4

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41,5 5,25 41,5
31,5
deep 2,8x0,5 3,35
3x5=15
26,4
external connection done
external connection done
VWK, 1996
IGBT-Module
Werte Maximum rated values Elektrische Eigenschaften Electrical properties
Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom collector-emitter voltage DC-collector current repetitive peak collctor current total power dissipation gate-emitter peak voltage forward current repetitive peak forw. current insulating test voltage VCES ICRM Ptot IFRM VISOL
Daten Preliminary Data 1400 min. iC=400A, vGE=15V, vj=25°C iC=400A, vGE=15V, vj=125°C iC=9mA, vCE=vGE, tvj=25°C fO=1MHz,tvj=25°C,vCE=25V,vGE=0 vCE=600V, vGE=0V, vj=25°C vCE=600V, vGE=0V, vj=125°C vCE=0V, vGE=20V, vj=25°C vCE=0V, vEG=20V, vj=25°C iC=400A,vCE=300V 15V,R G=12,tvj=25°C 15V,R G=12,tvj=125°C iC=400A,vCE=300V ±15V,R G=27, tvj=25°C ±15V,R G=27, tvj=125°C iC=400A,vCE=300V ±15V,R G=27, tvj=25°C ±15V,R G=27, tvj=125°C vGE(th) Cies iCES iGES iEGS 0,20 0,35 1,75 1,95 typ. 0,65 0,65
tp=1 tC=25°C, Transistor /transistor
tp=1ms RMS, f=50 min.
Charakteristische Werte Characteristic values: Transistor
Kollektor-Emitter Gate-Schwellspannung Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load)
Speicherzeit (induktive Last)
storage time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Charakteristische Werte Characteristic values: Invers-Diode
forward voltage peak reverse recovery current iF=400A, vGE=0V, vj=25°C iF=400A, vGE=0V, vj=125°C iF=400A vRM=300V, vEG=10V, vj=25°C vRM=300V, vEG=10V, vj=125°C iF=400A vRM=300V, vEG=10V, vj=25°C vRM=300V, vEG=10V, vj=125°C
recovered charge
Thermische Eigenschaften Thermal properties
Innerer thermal resistance, junction case RthJC Transistor, Modul/per module Transistor, Zweig/per Diode, Modul/per module Diode, Zweig/per Modul module RthCK Zweig Transistor Diode tstg 0,015 0,090 0,030 0,180 0,008 0,048 -40.+150 -40.+125 -40.+125 °C/W °C/W °C/W °C/W °C/W °C/W
Sperrschichttemperatur Betriebstemperatur Lagertemperatur
thermal resistance, case heatsink max. junction temperature operating temperature storage temperature
Mechanische Eigenschaften Mechanical properties
siehe Anlage Innere Isolation Anzugsdrehmoment mech. Befestigung Anzugsdrehmoment elektr. Gewicht case, appendix internal insulation mounting torque terminal connection torque weight Al2O3 ca.1500
terminals terminals
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with belonging technical notes.
eupec GmbH Max-Planck-Str. D59581 Warstein, Telefon (0)2902/ 764-0, Telefax /764-256

41,5 5,25 41,5 31,5 deep 2,8x0,5 3,35 3x5=15 26,4

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