61,5 61,5 2,8x0,5 26,4 3x5=15 3,35 deep external c

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61,5 61,5 2,8x0,5 26,4 3x5=15 3,35 deep external c

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61,5 61,5
2,8x0,5 26,4 3x5=15
3,35
deep
external connection done
external connection done
VWK, March 1996
Werte Maximum rated values Elektrische Eigenschaften Electrical properties
Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom
collector-emitter voltage DC-collector current repetitive peak collector current total power dissipation gate-emitter peak voltage forward current repetitive peak forw. current insulating test voltage collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (resistive load)
tp=1 tC=25°C, Transistor /transistor
tp=1ms RMS, f=50 min. iC=300A,v GE=15V, vj=25°C iC=300A,v GE=15V, vj=125°C iC=20mA, vCE=vGE, tvj=25°C fO=1MHz,tvj=25°C,vCE=25V,vGE=0 vCE=1600V, vGE=0V, vj=25°C vCE=1600V, vGE=0V, vj=125°C vCE=0V, vGE=20V, tvj=25°C vCE=0V, vGE=20V, vj=25°C =300A,v CE=900V,vLF=15V vLR=15V,R G=6,8 vj=25°C tvj=125°C =300A,v CE=900V,vLF=15V vLR=15V,R G=6,8 tvj=25°C tvj=125°C iC=300A,v CE=900V,vLF=15V vLR=15V,R G=6,8 tvj=25°C tvj=125°C
VCES ICRM Ptot IFRM VISOL min. vGE(th) Cies iCES iGES iGES typ. 0,25 0,30
1600 2000
Charakteristische Werte Characteristic values: Transistor
Kollektor-Emitter Gate-Schwellspannung Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (ohmsche Last)
Speicherzeit (induktive Last)
storage time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Charakteristische Werte Characteristic values: Invers-Diode
forward voltage peak reverse recovery current iF=300A, GE=0V, vj=25°C iF=300A, GE=0V, vj=125°C iF=300A, F/dt=300A/µs vRM=900V, vEG=10V, vj=25°C vRM=900V, vEG=10V, vj=125°C iF=300A, F/dt=300A/µs vRM=900V, vEG=10V, vj=25°C vRM=900V, vEG=10V, vj=125°C
recovered charge
Thermische Eigenschaften Thermal properties
Innerer thermal resistance, junction case Transistor, Modul/per module Transistor, Zweig/per Diode, Modul/per module Diode, Zweig/per Sperrschichttemperatur Betriebstemperatur Lagertemperatur thermal resistance, case heatsink Module Module Zweig max. junction temperature Module Module operating temperature Transistor transistor Diode diode storage temperature RthCK tstg RthJC 0,011 °C/W 0,064 °C/W 0,027 0,160 typ. 0,008 typ. 0,048 -40.+150 -40.+125 -40.+125 °C/W °C/W °C/W °C/W
Mechanische Eigenschaften Mechanical properties
siehe Anlage Innere Isolation Anzugsdrehmoment mech. Befestigung Anzugsdrehmoment elektr. Gewicht case, appendix internal insulation mounting torque terminal connection torque weight Seite Al2O3 ca.2300
terminals
Bedingungen
tfg=10µs, vLF=vLR 15V, RGF=RGR tvj=125°C =1000V VCEM =1300V iCMK1 3000A iCMK2 2300A
Conditions short-circuit protection
davon gilt abweich. Bedingungen with regard other conditions vCEM VCES Idic/dtI
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with relevant technical notes.
eupec GmbH Max-Planck-Str. D59581 Warstein, Telefon (0)2902/ 764-0, Telefax /764-256
FS300R16KF4
FS300R16KF4
Bild/Fig. Kollektor-Emitter-Spannung (typisch) Collector-emitter-voltage saturation region (typical)
Bild/Fig. (typisch) Transfer characteristic (typical)
100us 50us
FS300R16KF4
1000
1500
2000
FS300R16KF4
Bild/Fig. (nicht periodisch) Forward biased safe operating area (non repetitive)
Bild/Fig. Reverse biased safe operating area
Z(th)JC [°C/W] Diode IGBT 10-2 10-3
10-1
10-1
FS300R16KF4
FS300R16KF4
Bild/Fig. Transienter innerer Zweig (DC) Transient thermal impedance (DC)
Bild/Fig. Inversdiode (typisch) Forward characteristic inverse diode (typical)

61,5 61,5 2,8x0,5 26,4 3x5=15 3,35 deep external c

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