41,5 5,25 41,5 31,5 deep 2,8x0,5 3,35 3x5=15 26,4

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41,5 5,25 41,5 31,5 deep 2,8x0,5 3,35 3x5=15 26,4

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41,5 5,25 41,5
31,5
deep 2,8x0,5 3,35
3x5=15
26,4
external connection done
external connection done
VWK, 1996
IGBT-Module
Werte Maximum rated values Elektrische Eigenschaften Electrical properties
Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom collector-emitter voltage DC-collector current repetitive peak collector current total power dissipation gate-emitter peak voltage forward current repetitive peak forw. current insulation test voltage tp=1ms RMS, f=50 min. tp=1 tC=25°C, Transistor /transistor VCES ICRM Ptot IFRM VISOL
1200 1300 min. typ. 0,35 0,45 0,10 0,15 max.
Charakteristische Werte Characteristic values: Transistor
Kollektor-Emitter Gate-Schwellenspannung Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) iC=200A, vGE=15V, tvj=25°C iC=200A, vGE=15V, tvj=125°C iC=8mA, vCE=vGE, tvj=25°C fO=1MHz,tvj=25°C,vCE=25V,vGE=0V vCE=1200V, vGE=0V, vj=25°C vCE=1200V, vGE=0V, vj=125°C vCE=0V, vGE=20V, vj=25°C vCE=0V, vEG=20V, vj=25°C iC=200A,vCE=600V ±15V,R G=12, tvj=25°C ±15V,R G=12, tvj=125°C Speicherzeit (induktive Last) storage time (inductive load) iC=200A,vCE=600V ±15V,R G=12, tvj=25°C ±15V,R G=12, tvj=125°C Fallzeit (induktive Last) fall time (inductive load) iC=200A,vCE=600V ±15V,R G=12, tvj=25°C ±15V,R G=12, tvj=125°C iGES iEGS vGE(th) Cies iCES
Charakteristische Werte Characteristic values: Invers-Diode
forward voltage peak reverse recovery current iF=200A, vGE=0V, vj=25°C iF=200A, vGE=0V, vj=125°C iF=200A, -diF/dt=200A/µs vRM=600V, vEG=10V, vj=25°C vRM=600V, vEG=10V, vj=125°C recovered charge iF=200A, -diF/dt=200A/µs vRM=600V, vEG=10V, vj=25°C vRM=600V, vEG=10V, vj=125°C
Thermische Eigenschaften Thermal properties
Innerer thermal resistance, junction case Transistor,DC,pro Modul/per module RthJC Transistor,DC,pro Zweig/per Diode,DC, Modul/per module Diode,DC, Zweig/per Sperrschichttemperatur Betriebstemperatur Lagertemperatur thermal resistance, case heatsink max. junction temperature operating temperature storage temperature Transistor transistor Diode diode Modul Module Zweig tstg RthCK typ. typ. 0,016 °C/W 0,096 °C/W 0,035 °C/W 0,210 °C/W 0,008 °C/W 0,048 °C/W -40.+150 -40.+125 -40.+125
Mechanische Eigenschaften Mechanical properties
siehe Anlage Innere Isolation case, appendix internal insulation terminals Al2O3 ca.1500
Anzugsdrehmoment mech. Befestigung mounting torque Anzugsdrehmoment elektr. terminal connection torque Gewicht weight
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with belonging technical notes.
eupec GmbH Max-Planck-Str. D59581 Warstein, Telefon (0)2902/ 764-0, Telefax /764-256

41,5 5,25 41,5 31,5 deep 2,8x0,5 3,35 3x5=15 26,4

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