| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
File Number 4804.1 22A, 100V, 0.064 Ohm, N-Channel, UltraFET
Top Searches for this datasheetHUF75623P3, HUF75623S3ST File Number 4804.1 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) Features Ultra On-Resistance rDS(ON) 0.064, Simulation Models Temperature Compensated PSPICE® SABERElectrical Models Spice SABER© Thermal Impedance Models www.intersil.com Peak Current Pulse Width Curve Rating Curve DRAIN (FLANGE) GATE SOURCE HUF75623P3 HUF75623S3ST Symbol Ordering Information PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 75623P 75623S HUF75623P3 HUF75623S3ST NOTE: When ordering, entire part number i.e., HUF75623P3 Absolute Maximum Ratings 25oC, Unless Otherwise Specified HUF75623P3, HUF75623S3ST UNITS Figure Figures 0.57 Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous 25oC, 10V) (Figure Continuous 100oC, 10V) (Figure Pulsed Drain Current .IDM Pulsed Avalanche Rating .UIS Power Dissipation Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief TB334 Tpkg NOTE: 25oC 150oC. W/oC CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied. CAUTION: These devices sensitive electrostatic discharge. Follow proper Handling Procedures. UltraFET® registered trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. SABERis trademark Analogy, Inc. 1-888-INTERSIL 321-724-7143 Intersil Design trademark Intersil Corporation. Copyright Intersil Corporation 2000 HUF75623P3, HUF75623S3ST Electrical Specifications PARAMETER STATE SPECIFICATIONS Drain Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS 250µA, (Figure 95V, 90V, 150oC Gate Source Leakage Current STATE SPECIFICATIONS Gate Source Threshold Voltage Drain Source Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction Case Thermal Resistance Junction Ambient TO-220 1.76 oC/W oC/W 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS UNITS ±100 IGSS ±20V VGS(TH) rDS(ON) VDS, 250µA (Figure 22A, (Figure 0.054 0.064 SWITCHING SPECIFICATIONS (VGS 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge Threshold Gate Charge Gate Source Gate Charge Gate Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS 25V, 1MHz (Figure Qg(TOT) Qg(10) Qg(TH) 50V, 22A, Ig(REF) 1.0mA (Figures td(ON) td(OFF) tOFF 50V, 10V, (Figures Source Drain Diode Specifications PARAMETER Source Drain Diode Voltage SYMBOL Reverse Recovery Time Reverse Recovered Charge 22A, dISD/dt 100A/µs 22A, dISD/dt 100A/µs TEST CONDITIONS 1.25 1.00 UNITS HUF75623P3, HUF75623S3ST Typical Performance Curves POWER DISSIPATION MULTIPLIER DRAIN CURRENT CASE TEMPERATURE (oC) CASE TEMPERATURE (oC) FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01 NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-2 RECTANGULAR PULSE DURATION 10-1 SINGLE PULSE 0.01 10-5 10-4 FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 25oC PEAK CURRENT TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS: TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-5 10-4 10-3 10-2 PULSE WIDTH 10-1 FIGURE PEAK CURRENT CAPABILITY HUF75623P3, HUF75623S3ST Typical Performance Curves IAS, AVALANCHE CURRENT SINGLE PULSE RATED 25oC (Continued) DRAIN CURRENT (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD) 100µs OPERATION THIS AREA LIMITED rDS(ON) DRAIN SOURCE VOLTAGE STARTING 25oC STARTING 150oC 10ms 0.001 0.01 tAV, TIME AVALANCHE (ms) NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE FORWARD BIAS SAFE OPERATING AREA FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY PULSE DURATION 80µs DUTY CYCLE 0.5% DRAIN CURRENT DRAIN CURRENT 175oC -55oC 25oC PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC DRAIN SOURCE VOLTAGE GATE SOURCE VOLTAGE FIGURE TRANSFER CHARACTERISTICS FIGURE SATURATION CHARACTERISTICS NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% 10V, NORMALIZED GATE THRESHOLD VOLTAGE VDS, 250µA JUNCTION TEMPERATURE (oC) JUNCTION TEMPERATURE (oC) FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE HUF75623P3, HUF75623S3ST Typical Performance Curves NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 250µA 1000 CAPACITANCE (pF) CISS COSS (Continued) 2000 1MHz CRSS JUNCTION TEMPERATURE (oC) DRAIN SOURCE VOLTAGE FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE GATE SOURCE VOLTAGE WAVEFORMS DESCENDING ORDER: GATE CHARGE (nC) NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE GATE CHARGE WAVEFORMS CONSTANT GATE CURRENT Test Circuits Waveforms BVDSS VARY OBTAIN REQUIRED PEAK 0.01 FIGURE UNCLAMPED ENERGY TEST CIRCUIT FIGURE UNCLAMPED ENERGY WAVEFORMS HUF75623P3, HUF75623S3ST Test Circuits Waveforms (Continued) Qg(TOT) Qg(10) Qg(TH) Ig(REF) Ig(REF) FIGURE GATE CHARGE TEST CIRCUIT FIGURE GATE CHARGE WAVEFORMS td(ON) tOFF td(OFF) PULSE WIDTH FIGURE SWITCHING TIME TEST CIRCUIT FIGURE SWITCHING TIME WAVEFORM HUF75623P3, HUF75623S3ST PSPICE Electrical Model .SUBCKT HUF75623 1.27e-9 1.27e-9 7.20e-10 DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD October 1999 LDRAIN DPLCAP RLDRAIN DBREAK EBREAK DRAIN RSLC1 ESLC RSLC2 LGATE GATE RLGATE EVTEMP RGATE EVTHRES LDRAIN 1.0e-9 LGATE 5.53e-9 LSOURCE 4.35e-9 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD RBREAK RBREAKMOD RDRAIN RDRAINMOD 2.70e-2 RGATE 2.50 RLDRAIN RLGATE 55.3 RLSOURCE 43.5 RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 1.77e-2 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD MSTRO LSOURCE RSOURCE RLSOURCE SOURCE VBAT ESLC .MODEL DBODYMOD 6.0e-13 6.2e-3 TRS1 2.1e-3 TRS2 2.0e-6 8.50e-10 6.30e-8 0.54) .MODEL DBREAKMOD 5.6e-1 TRS1 8e-4 TRS2 3e-6) .MODEL DPLCAPMOD (CJO 9.29e-10 1e-30 0.79) .MODEL MMEDMOD NMOS (VTO 3.21 1e-30 2.50) .MODEL MSTROMOD NMOS (VTO 3.60 1e-30 .MODEL MWEAKMOD NMOS (VTO 2.77 0.09 1e-30 25.0 .MODEL RBREAKMOD (TC1 =1.05e-3 -5e-7) .MODEL RDRAINMOD (TC1 1.20e-2 3.00e-5) .MODEL RSLCMOD (TC1 3.20e-3 3.00e-6) .MODEL RSOURCEMOD (TC1 1e-3 1e-6) .MODEL RVTHRESMOD (TC1 -2.20e-3 -9.00e-6) .MODEL RVTEMPMOD (TC1 -2.40e-3 =1.80e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 .MODEL S1BMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .MODEL S2BMOD VSWITCH (RON 1e-5 .ENDS ROFF ROFF ROFF ROFF -6.2 VOFF= -3.1) -3.1 VOFF= -6.2) -1.0 VOFF= 0.5) VOFF= -1.0) NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley. EBREAK 117.8 EVTHRES EVTEMP RDRAIN DBODY MWEAK MMED RBREAK RVTEMP VBAT RVTHRES HUF75623P3, HUF75623S3ST SABER Electrical Model October 1999 template huf75623 n2,n1,n3 electrical n2,n1,n3 iscl d.model dbodymod 6.00e-13, 8.50e-10, 6.30e-8, 5.5, 0.54) d.model dbreakmod d.model dplcapmod (cjo 9.29e-10, 1e-30, 0.79) m.model mmedmod (type=_n, 3.21, 1e-30, m.model mstrongmod (type=_n, 3.60, 1e-30, m.model mweakmod (type=_n, 2.77, 0.09, 1e-30, sw_vcsp.model s1amod (ron 1e-5, roff 0.1, -6.2, voff -3.1) DPLCAP sw_vcsp.model s1bmod (ron =1e-5, roff 0.1, -3.1, voff -6.2) sw_vcsp.model s2amod (ron 1e-5, roff 0.1, -1.0, voff 0.5) sw_vcsp.model s2bmod (ron 1e-5, roff 0.1, 0.5, voff -1.0) c.ca 1.27e-9 c.cb 1.27e-9 c.cin 7.20e-10 d.dbody model=dbodymod d.dbreak model=dbreakmod d.dplcap model=dplcapmod i.it l.ldrain 1e-9 l.lgate 5.53e-9 l.lsource 4.35e-9 GATE RLGATE LGATE RSLC2 ISCL LDRAIN RLDRAIN RDBREAK DBREAK MWEAK MMED MSTRO EBREAK RDBODY DRAIN RSLC1 EVTEMP RGATE EVTHRES RDRAIN DBODY m.mmed model=mmedmod, l=1u, w=1u m.mstrong model=mstrongmod, l=1u, w=1u m.mweak model=mweakmod, l=1u, w=1u res.rbreak 1.05e-3, -5.0e-7 res.rdbody 6.2e-3, 2.10e-3, 2.0e-6 res.rdbreak 5.6e-1, 8.0e-4, 3.0e-6 res.rdrain 2.70e-2, 1.20e-2, 3.00e-5 res.rgate 2.50 res.rldrain res.rlgate 55.3 res.rlsource 43.5 res.rslc1 1e-6, 3.2e-3, 3.0e-6 res.rslc2 res.rsource 1.77e-2, 1e-3, 1e-6 res.rvtemp -2.4e-3, 1.8e-6 res.rvthres -2.2e-3, -9.0e-6 spe.ebreak 117.8 spe.eds spe.egs spe.esg spe.evtemp spe.evthres sw_vcsp.s1a model=s1amod sw_vcsp.s1b model=s1bmod sw_vcsp.s2a model=s2amod sw_vcsp.s2b model=s2bmod v.vbat dc=1 equations (n51->n50) +=iscl iscl: v(n51,n50) 3.5)) LSOURCE RLSOURCE SOURCE RSOURCE RBREAK RVTEMP VBAT RVTHRES HUF75623P3, HUF75623S3ST SPICE Thermal Model October 1999 HUF75623T CTHERM1 1.40e-3 CTHERM2 5.55e-3 CTHERM3 5.65e-3 CTHERM4 6.10e-3 CTHERM5 9.80e-3 CTHERM6 7.70e-2 RTHERM1 1.10e-2 RTHERM2 5.80e-2 RTHERM3 1.35e-1 RTHERM4 3.60e-1 RTHERM5 4.13e-1 RTHERM6 4.30e-1 RTHERM1 CTHERM1 JUNCTION RTHERM2 CTHERM2 RTHERM3 CTHERM3 SABER Thermal Model SABER thermal model HUF75623T template thermal_model thermal_c ctherm.ctherm1 1.40e-3 ctherm.ctherm2 5.55e-3 ctherm.ctherm3 5.65e-3 ctherm.ctherm4 6.10e-3 ctherm.ctherm5 9.80e-3 ctherm.ctherm6 7.70e-2 rtherm.rtherm1 1.10e-2 rtherm.rtherm2 5.80e-2 rtherm.rtherm3 1.35e-1 rtherm.rtherm4 3.60e-1 rtherm.rtherm5 4.13e-1 rtherm.rtherm6 4.30e-1 RTHERM4 CTHERM4 RTHERM5 CTHERM5 RTHERM6 CTHERM6 CASE HUF75623P3, HUF75623S3ST TO-263AB TERM. SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE TERM. 0.450 (11.43) 0.350 (8.89) 0.700 (17.78) 0.080 (2.03) 0.062 (1.58) 0.150 (3.81) MINIMUM SIZE RECOMMENDED SURFACE-MOUNTED APPLICATIONS INCHES MILLIMETERS SYMBOL NOTES 0.170 0.180 4.32 4.57 0.048 0.052 1.22 1.32 0.030 0.034 0.77 0.86 0.045 0.055 1.15 1.39 0.310 7.88 0.018 0.022 0.46 0.55 0.405 0.425 10.29 10.79 0.395 0.405 10.04 10.28 0.100 2.54 0.200 5.08 0.045 0.055 1.15 1.39 0.095 0.105 2.42 2.66 0.175 0.195 4.45 4.95 0.090 0.110 2.29 2.79 0.050 0.070 1.27 1.77 0.315 8.01 NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-263AB outline dated 2-92. dimensions established minimum mounting surface terminal Solder finish uncontrolled this area. Dimension (without solder). typically 0.002 inches (0.05mm) solder plating. terminal length soldering. Position lead measured 0.120 inches (3.05mm) from bottom dimension Controlling dimension: Inch. Revision dated 5-99. 1.5mm DIA. HOLE 4.0mm USER DIRECTION FEED 2.0mm 1.75mm TO-263AB 24mm TAPE REEL 24mm 16mm COVER TAPE 40mm MIN. ACCESS HOLE 30.4mm 13mm 330mm 100mm GENERAL INFORMATION PIECES REEL. ORDER MULTIPLES FULL REELS ONLY. MEETS EIA-481 REVISION SPECIFICATIONS. 24.4mm HUF75623P3, HUF75623S3ST TO-220AB LEAD JEDEC TO-220AB PLASTIC PACKAGE TERM. INCHES SYMBOL 0.170 0.048 0.030 0.045 0.014 0.590 0.395 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 0.200 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112 MILLIMETERS 4.32 1.22 0.77 1.15 0.36 14.99 10.04 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 5.08 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES NOTES: These dimensions within allowable dimensions Rev. JEDEC TO-220AB outline dated 3-24-87. Lead dimension finish uncontrolled Lead dimension (without solder). typically 0.002 inches (0.05mm) solder coating. Position lead measured 0.250 inches (6.35mm) from bottom dimension Position lead measured 0.100 inches (2.54mm) from bottom dimension Controlling dimension: Inch. Revision dated 7-97. Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification. Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil Ltd. 8F-2, Sec. Chien-kuo North, Taipei, Taiwan Republic China TEL: 886-2-2515-8508 FAX: 886-2-2515-8369 Other recent searchesMTD1N50E - MTD1N50E MTD1N50E Datasheet MTC-20146 - MTC-20146 MTC-20146 Datasheet FYS-23011EX - FYS-23011EX FYS-23011EX Datasheet FX-XX - FX-XX FX-XX Datasheet EN5835 - EN5835 EN5835 Datasheet LC75374E - LC75374E LC75374E Datasheet
Privacy Policy | Disclaimer |