Radiation Hardened Octal Buffer/Line Driver, Three-State Pinouts

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Radiation Hardened Octal Buffer/Line Driver, Three-State Pinouts

Datasheet Thumbnail

Top Searches for this datasheet

HCS240MS
Radiation Hardened Octal Buffer/Line Driver, Three-State
Pinouts
LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH VIEW
Features
Micron Radiation Hardened CMOS Total Dose 200K (Si) Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: 1012 (Si)/s Dose Rate Upset
(Si)/s 20ns Pulse
Latch-Up Free Under Conditions Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Current Levels VOL,
Description
Intersil HCS240MS Radiation Hardened Inverting Octal Buffer/Line Driver, Three-State, with active-low output enables. HCS240MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family. HCS240MS supplied lead Ceramic flatpack suffix) SBDIP Package suffix).
LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20, LEAD FINISH VIEW
Ordering Information
PART NUMBER HCS240DMSR HCS240KMSR HCS240D/Sample HCS240K/Sample HCS240HMSR TEMPERATURE RANGE -55oC +125oC -55oC +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class Equivalent Intersil Class Equivalent Sample Sample PACKAGE Lead SBDIP Lead Ceramic Flatpack Lead SBDIP Lead Ceramic Flatpack
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
Spec Number File Number
518837 3562.1
HCS240MS Functional Diagram
TRUTH TABLE INPUTS OUTPUT
High Voltage Level, =Low Voltage Level Immaterial, =High Impedance
Spec Number
518837
Specifications HCS240MS
Absolute Maximum Ratings
Supply Voltage -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±35mA Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering 10sec) +265oC Junction Temperature (TJ) +175oC Classification Class (All Voltage Reference Terminal)
Reliability Information
Thermal Resistance SBDIP Package. 72oC/W 24oC/W Ceramic Flatpack Package 107oC/W 28oC/W Maximum Package Power Dissipation +125oC Ambient SBDIP Package. 0.69W Ceramic Flatpack Package 0.47W device power exceeds package dissipation capability, provide heat sinking derate linearly following rate: SBDIP Package. 13.9mW/oC Ceramic Flatpack Package 9.3mW/oC Gate Count Gates
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Operating Conditions
Operating Voltage Range +4.5V +5.5V Input Rise Fall Time 4.5V (tr, 100ns/V Max. Operating Temperature Range -55oC +125oC Input High Voltage. Input Voltage
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Output Current (Source) 4.5V, 4.5V, VOUT -0.4V, (Note 4.5V, 4.5V, VOUT 0.4V, (Note 5.5V, 3.85V, 1.65V, -50µA 4.5V, 3.15V, 1.35V, -50µA Output Voltage 5.5V, 3.85V, 1.65V, 50µA 4.5V, 3.15V, 1.35V, 50µA Input Leakage Current Three-State Output Leakage Current Noise Immunity Functional Test 5.5V, 5.5V, Force Voltage 4.5V, 3.15V, 1.35V, (Note LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC -7.2 -6.0 -0.1 -0.1 UNITS
PARAMETER Supply Current
SYMBOL
(NOTE CONDITIONS 5.5V,
Output Current (Sink)
Output Voltage High
+25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0
NOTES: voltages reference device GND. Force/Measure functions interchanged. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
Spec Number
518837
Specifications HCS240MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Propagation Delay TPLH1 4.5V, 4.5V, Propagation Delay TPZL1 4.5V, 4.5V, Propagation Delay TPLZ1 4.5V, 4.5V, Propagation Delay TPZH1 4.5V, 4.5V, Propagation Delay TPHZ1 4.5V, 4.5V, NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETER Propagation Delay
SYMBOL TPHL1
(NOTES CONDITIONS 4.5V, 4.5V,
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL (NOTE CONDITIONS 5.0V, 5.0V, 1MHz TEMPERATURE +25oC +125oC, -55oC Input Capacitance 5.0V, 5.0V, 1MHz +25oC +125oC, -55oC Output Capacitance COUT 5.0V, 5.0V, 1MHz +25oC +125oC, -55oC Output Transition Time TTHL TTLH 4.5V, 4.5V, +25oC +125oC, -55oC NOTE: parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which affect these characteristics. UNITS
Spec Number
518837
Specifications HCS240MS
TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS PARAMETER Supply Current Output Current (Source) Output Current (Sink) SYMBOL (NOTE CONDITIONS 5.5V, 4.5V, VOUT -0.4V, 4.5V, VOUT 0.4V, 5.5V, 3.85V, 1.65V, -50µA 4.5V, 3.15V, 1.35V, -50µA Output Voltage 5.5V, 3.85V, 1.65V, 50µA 4.5V, 3.15V, 1.35V, 50µA Input Leakage Current Three-State Output Leakage Current Noise Immunity Functional Test Propagation Delay 5.5V, 5.5V, Force Voltage TEMPERATURE +25oC +25oC -6.0 0.75 UNITS
+25oC
Output Voltage High
+25oC
-0.1 -0.1
+25oC
+25oC
+25oC
+25oC +25oC
4.5V, 3.15V, 1.35V, (Note 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V,
+25oC
TPHL1
+25oC
Propagation Delay
TPLH1
+25oC
Propagation Delay
TPZL1
+25oC
Propagation Delay
TPLZ1
+25oC
Propagation Delay
TPZH1
+25oC
Propagation Delay
TPHZ1
+25oC
NOTES: voltages referenced device GND. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP
PARAMETER IOL/IOH
DELTA LIMIT 12µA -15% Hour ±200nA
Spec Number
518837
Specifications HCS240MS
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup Subgroup Group NOTE: Alternate group testing accordance with Method 5005 Mil-Std-883 exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups ICC, IOL/H, IOZL/H READ RECORD ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H
TABLE TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group Subgroup NOTE: Except test which will performed 100% go/no-go. TABLE STATIC DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN STATIC BURN-IN (Note STATIC BURN-IN (Note DYNAMIC BURN-IN (Note NOTES: Each except will have series resistor Each except will have series resistor GROUND 0.5V 0.5V 50kHz 25kHz TEST METHOD 5005 POST Table READ RECORD POST Table (Note
TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V
NOTE: Each except will have resistor irradiation testing. Group Subgroup sample size dice/wafer failures.
Spec Number
518837
HCS240MS Intersil Space Level Product Flow `MS'
Wafer Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, Samples/Wafer, Rejects 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Shear Monitor, Method 2019 2027 100% Internal Visual Inspection, Method 2010, Condition 100% Temperature Cycle, Method 1010, Condition Cycles 100% Constant Acceleration, Method 2001, Condition Method 5004 100% PIND, Method 2020, Condition 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T2) 100% Delta Calculation (T0-T2) 100% Method 5004 (Notes 1and 100% Dynamic Burn-In, Condition hrs., +125oC Equivalent, Method 1015 100% Interim Electrical Test (T3) 100% Delta Calculation (T0-T3) 100% Method 5004 (Note 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 100% External Visual, Method 2009 Sample Group Method 5005 (Note 100% Data Package Generation (Note
NOTES: Failures from Interim electrical test combined determining Failures from subgroup deltas used calculating PDA. maximum allowable with more than failures from subgroup Radiographic (X-Ray) inspection performed point after serialization allowed Method 5004. Alternate Group testing performed allowed MIL-STD-883, Method 5005. Data Package Contents: Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Date Code, Intersil Part Number, Number, Quantity). Wafer Acceptance Report (Method 5007). Includes reproductions photos with percent step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Dose, Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read Record data file Intersil. X-Ray report film. Includes penetrometer measurements. Screening, Electrical, Group attributes (Screening attributes begin after package seal). Serial Number Sheet (Good units serial number number). Variables Data (All Delta operations). Data identified serial number. Data header includes number date test. Certificate Conformance part shipping invoice part Data Book. Certificate Conformance signed authorized Quality Representative.
Spec Number
518837
HCS240MS Propagation Delay Timing Diagram
TPLH TPHL OUTPUT 50pF INPUT
Propagation Delay Load Circuit
TEST POINT
Transition Timing Diagram
TTLH TTHL
OUTPUT
VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS
Three-State High Timing Diagrams
TPZH TPHZ OUTPUT INPUT
Three-State High Load Circuit
TEST POINT
50pF
THREE-STATE HIGH VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 2.25 3.60 UNITS
Spec Number
518837
HCS240MS Three-State Timing Diagrams
TPZL TPLZ 50pF OUTPUT TEST POINT INPUT
Three-State Load Circuit
THREE-STATE VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 2.25 0.90 UNITS
Spec Number
518837
HCS240MS Characteristics
DIMENSIONS: 1mils METALLIZATION: Type: Thickness: GLASSIVATION: Type: SiO2 Thickness: WORST CASE CURRENT DENSITY: <2.0 A/cm2 BOND SIZE: (mils) 100µm
Metallization Mask Layout
HCS240MS
(20) (19) (3)BO4
(18)
(17)
(16)
(15)
(14)
(10)
(11)
(12)
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
(13)
Spec Number
518837

Radiation Hardened Octal Buffer/Line Driver, Three-State Pinouts

Top Searches for this datasheet

Other recent searches