CMOS Dual Wide Input AND-OR-INVERT Gate Pinout CD4085BMS VIE
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CD4085BMS
CMOS Dual Wide Input AND-OR-INVERT Gate
Pinout
CD4085BMS VIEW
Features
High Voltage Type (20V Rating) Medium Speed Operation tPHL 90ns tPLH 125ns (Typ.) Individual Inhibit Controls Parametric Ratings Standardized Symmetrical Output Characteristics 100% Tested Quiescent Current Maximum Input Current Over Full Package Temperature Range; 100nA +25oC Noise Margin (Over Full Package/Temperature Range) 2.5V Meets Requirements JEDEC Tentative Standard 13B, "Standard Specifications Description Series CMOS Devices"
INHI A1B1 C1D1 INH2 A2B2 C2D2
INHIBIT INHIBIT
Functional Diagram
INHIBIT
Description
CD4085BMS contains pair AND-OR-INVERT gates, each consisting input gates driving input gate. Individual inhibit controls provided both A-O-I gates. CD4085BMS supplied these lead outline packages: Braze Seal Frit Seal Ceramic Flatpack
INHIBIT
INHIBIT LOGIC HIGH LOGIC
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
File Number
3327
7-1046
Specifications CD4085BMS
Absolute Maximum Ratings
Supply Voltage Range, (VDD) -0.5V +20V (Voltage Referenced Terminals) Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Operating Temperature Range -55oC +125oC Package Types Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (During Soldering) +265oC Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case Maximum
Reliability Information
Thermal Resistance Ceramic FRIT Package 80oC/W 20oC/W Flatpack Package 70oC/W 20oC/W Maximum Package Power Dissipation (PD) +125 -55oC +100oC (Package Type 500mW +100oC +125oC (Package Type Derate Linearity 12mW/oC 200mW Device Dissipation Output Transistor 100mW Full Package Temperature Range (All Package Types) Junction Temperature +175oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS 18V, Input Leakage Current Input Leakage Current Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Threshold Voltage Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH 15V, Load 15V, Load (Note VOUT 0.4V 10V, VOUT 0.5V 15V, VOUT 1.5V VOUT 4.6V VOUT 2.5V 10V, VOUT 9.5V 15V, VOUT 13.5V 10V, -10µA 10µA 2.8V, 20V, 18V, Input Voltage (Note Input Voltage High (Note Input Voltage (Note Input Voltage High (Note 4.5V, 0.5V 4.5V, 0.5V 15V, 13.5V, 1.5V 15V, 13.5V, 1.5V LIMITS TEMPERATURE +125oC +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC
PARAMETER Supply Current
SYMBOL
CONDITIONS (NOTE 20V,
-100 -1000 -100
1000 -0.53 -1.8 -1.4 -3.5 -0.7
UNITS
+25oC, +125oC, -55oC 14.95 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 0.53 -2.8
VDD/2 VDD/2
NOTES: voltages referenced device GND, 100% testing being implemented. Go/No test with limits applied inputs.
accuracy, voltage measured differentially VDD. Limit 0.050V max.
7-1047
Specifications CD4085BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TEMPERATURE TPLH1 TPHL2 TPLH2 TTHL TTLH +25oC +125oC, -55oC LIMITS UNITS
PARAMETER Propagation Delay Data Propagation Delay Data Propagation Delay Inhibit Propagation Delay Inhibit Transition Time
SYMBOL TPHL1
CONDITIONS (NOTES
+25oC +125oC, -55oC
+25oC +125oC, -55oC +25oC +125oC, -55oC
+25oC +125oC, -55oC
NOTES: 50pF, 200K, Input 20ns. -55oC +125oC limits guaranteed, 100% testing being implemented.
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE -55oC, +25oC 4.95 9.95 0.36 0.64 -0.36 -0.64 -1.15 -2.0 -0.9 -2.6 UNITS
+125oC 10V, -55oC, +25oC +125oC 15V, -55oC, +25oC
+125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) IOL5 Load 10V, Load Load 10V, Load VOUT 0.4V +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 10V, VOUT 0.5V +125oC -55oC Output Current (Sink) IOL15 15V, VOUT 1.5V +125oC -55oC Output Current (Source) IOH5A VOUT 4.6V +125oC -55oC Output Current (Source) IOH5B VOUT 2.5V +125oC -55oC Output Current (Source) IOH10 10V, VOUT 9.5V +125oC -55oC
7-1048
Specifications CD4085BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Output Current (Source) SYMBOL IOH15 CONDITIONS =15V, VOUT 13.5V NOTES TEMPERATURE +125oC -55oC Input Voltage Input Voltage High Propagation Delay Data TPHL1 10V, 10V, Propagation Delay Data TPLH1 Propagation Delay Inhibit Propagation Delay Inhibit Transition Time TPHL2 TPLH2 TTHL TTLH Input +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC -2.4 -4.2 UNITS
Input Capacitance NOTES:
voltages referenced device GND. parameters listed Table controlled design process directly tested. These parameters characterized initial design release upon design changes which would affect these characteristics. 50pF, 200K, Input 20ns.
TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current Threshold Voltage Threshold Voltage Delta Threshold Voltage Threshold Voltage Delta Functional SYMBOL VNTH CONDITIONS 20V, 10V, -10µA 10V, -10µA 10µA 10µA 18V, Propagation Delay Time TPHL TPLH +25oC NOTES TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC -2.8 VDD/2 -0.2 VDD/2 1.35 +25oC Limit UNITS
NOTES: voltages referenced device GND. 50pF, 200K, Input 20ns.
Table +25oC limit. Read Record
TABLE BURN-IN LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current MSI-1 Output Current (Sink) SYMBOL IOL5 0.2µA Pre-Test Reading DELTA LIMIT
7-1049
Specifications CD4085BMS
TABLE BURN-IN LIFE TEST DELTA PARAMETERS +25OC PARAMETER Output Current (Source) SYMBOL IOH5A DELTA LIMIT Pre-Test Reading
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test (Post Burn-In) Interim Test (Post Burn-In) (Note Interim Test (Post Burn-In) (Note Final Test Group Group Subgroup Subgroup Group MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups Subgroups IDD, IOL5, IOH5A READ RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
NOTE: Parameteric, Functional; Cumulative Static
TABLE TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD POST-IRRAD Table READ RECORD PRE-IRRAD POST-IRRAD Table
CONFORMANCE GROUPS Group Subgroup
TABLE BURN-IN IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In Note Static Burn-In Note Dynamic BurnIn Note Irradiation Note NOTE: Each except will have series resistor 0.5V Each except will have series resistor Group Subgroup sample size dice/wafer, failures, 0.5V OPEN GROUND 5-13 8-14 8-14 -0.5V 50kHz 25kHz
7-1050
CD4085BMS Schematic
INHIBIT
TERM. TERM.
INHIBIT
INPUTS PROTECTED CMOS PROTECTION NETWORK
FIGURE CD408B SCHEMATIC DIAGRAM
7-1051
CD4085BMS Typical Performance Characteristics
AMBIENT TEMPERATURE (TA) +25oC OUTPUT VOLTAGE (VO) CURRENT PEAK CURRENT PEAK INPUT VOLTAGE (VI) SUPPLY VOLTAGE (VDD) DRAINCURRENT (ID) OUTPUT VOLTAGE (VO) 17.5 AMBIENT TEMPERATURE (TA) +25oC
12.5 12.5 17.5 INPUT VOLTAGE (VI) 22.5
FIGURE TYPICAL VOLTAGE CURRENT TRANSFER CHARACTERISTICS
POWER DISSIPATION (PD) (µW) AMBIENT TEMPERATURE (TA) +25oC
FIGURE MINIMUM MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS
HIGH-TO-LOW LEVEL PROPAGATION DELAY TIME (tPHL) (ns) AMBIENT TEMPERATURE (TA) +25oC
SUPPLY VOLTAGE (VDD) 50pF 15pF
SUPPLY VOLTAGE (VDD)
10-1 LOAD CAPACITANCE (CL) (pF)
FREQUENCY (kHz)
FIGURE TYPICAL POWER DISSIPATION FREQUENCY
FIGURE TYPICAL DATA HIGH-TO-LOW LEVEL PROPAGATION DELAY TIME LOAD CAPACITANCE
PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) +25oC LOAD CAPACITANCE (CL) 50pF
AMBIENT TEMPERATURE (TA) +25oC LOW-TO-HIGH LEVEL PROPAGATION DELAY TIME (tPLH) (ns)
1250 1000 tPHL 12.5 17.5 tPLH
LOAD CAPACITANCE (CL) (pF) SUPPLY VOLTAGE (VDD)
SUPPLY VOLTAGE (VDD)
FIGURE TYPICAL DATA LOW-TO-HIGH PROPAGATION DELAY TIME LOAD CAPACITANCE
FIGURE TYPICAL DATA PROPAGATION DELAY TIME SUPPLY VOLTAGE
7-1052
CD4085BMS Typical Performance Characteristics
OUTPUT (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) +25oC
(Continued)
AMBIENT TEMPERATURE (TA) +25oC
OUTPUT (SINK) CURRENT (IOL) (mA)
GATE-TO-SOURCE VOLTAGE (VGS)
15.0 GATE-TO-SOURCE VOLTAGE (VGS) 12.5 10.0
DRAIN-TO-SOURCE VOLTAGE (VDS)
DRAIN-TO-SOURCE VOLTAGE (VDS)
FIGURE TYPICAL OUTPUT (SINK) CURRENT CHARACTERISTICS
FIGURE MINIMUM OUTPUT (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
AMBIENT TEMPERATURE (TA) +25oC TRANSITION TIME (tTHL, tTLH) (ns)
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
SUPPLY VOLTAGE (VDD) -10V -15V
LOAD CAPACITANCE (CL) (pF)
FIGURE TYPICAL TRANSITION TIME LOAD CAPACITANCE
FIGURE TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
-10V
-15V
FIGURE MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
7-1053
CD4085BMS Chip Dimensions Layout
Dimensions parenthesis millimeters derived from basic inch dimensions indicated. Grid graduations mils (10-3 inch).
METALLIZATION: Thickness: PASSIVATION: Silane
BOND PADS: 0.004 inches 0.004 inches THICKNESS: 0.0198 inches 0.0218 inches
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
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