Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
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HCS241MS
Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
Pinouts
LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH VIEW
Features
Micron Radiation Hardened CMOS Total Dose 200K (Si) Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: 1012 (Si)/s Dose Rate Upset >1010 (Si)/Sec. 20ns Pulse Latch Free Under Conditions Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Compatibility Levels VOL,
LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20, LEAD FINISH VIEW
Description
Intersil HCS241MS Radiation Hardened inverting octal three-state buffer/line driver with output enables, active low, active high. HCS241MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family. HCS241MS supplied lead ceramic flatpack suffix) SBDIP package suffix).
Ordering Information
PART NUMBER HCS241DMSR HCS241KMSR HCS241D/Sample HCS241K/Sample HCS241HMSR TEMPERATURE RANGE -55oC +125oC -55oC +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class Equivalent Intersil Class Equivalent Sample Sample PACKAGE Lead SBDIP Lead Ceramic Flatpack Lead SBDIP Lead Ceramic Flatpack
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
Spec Number File Number
518838 3122.1
HCS241MS Functional Diagram
TRUTH TABLE INPUTS High Voltage Level Voltage Level Immaterial High Impedance OUTPUT INPUTS OUTPUT
Spec Number
518838
Specifications HCS241MS
Absolute Maximum Ratings
Supply Voltage -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±35mA (All Voltage Reference Terminal) Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering sec) +265oC Junction Temperature (TJ) +175oC Classification Class
Reliability Information
Thermal Resistance SBDIP Package. 72oC/W 24oC/W Ceramic Flatpack Package 107oC/W 28oC/W Maximum Package Power Dissipation +125oC Ambient SBDIP Package. 0.69W Ceramic Flatpack Package 0.47W device power exceeds package dissipation capability, provide heat sinking derate linearly following rate: SBDIP Package. 13.9mW/oC Ceramic Flatpack Package 9.3mW/oC Gate Count Gates
CAUTION: with semiconductors, stress listed under "Absolute Maximum Ratings" applied devices (one time) without resulting permanent damage. This stress rating only. Exposure absolute maximum rating conditions extended periods affect device reliability. conditions listed under "Electrical Performance Characteristics" only conditions recommended satisfactory device operation.
Operating Conditions
Supply Voltage +4.5V +5.5V Input Rise Fall Times 4.5V (TR, 100ns/V Operating Temperature Range (TA) -55oC +125oC Input Voltage (VIL). 0.0V Input High Voltage (VIH)
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Output Current (Sink) 4.5V, VOUT 0.4V, (Note 4.5V, VOUT 0.4V, (Note 4.5V, 3.15V, 1.35V, 50µA 5.5V, 3.85V, 1.65V, 50µA Output Voltage High 4.5V, 3.15V, 1.35V, -50µA 5.5V, 3.85V, 1.35V, -50µA Input Leakage Current 5.5V LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC -7.2 -6.0 UNITS
PARAMETER Supply Current
SYMBOL
CONDITIONS 5.5V,
Output Current (Source)
Output Voltage
VCC0.1 VCC0.1
±0.5 ±5.0 ±1.0
Three-State Output Leakage Current
5.5V, Force Voltage
Noise Immunity Functional Test NOTES:
4.5V, 3.15V, 1.35V (Note
voltages referenced device GND. Force/Measure function interchanged. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
Spec Number
518838
Specifications HCS241MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Propagation Delay TPHL1 4.5V, 4.5V, Propagation Delay TPZL1 TPZL2 4.5V, 4.5V, Propagation Delay TPLZ1 TPLZ2 4.5V, 4.5V, Propagation Delay TPZH1 TPZH2 4.5V, 4.5V, Propagation Delay TPHZ1 TPHZ2 4.5V, 4.5V, NOTES: voltage referenced GND. Measurements made with 50pF, 500, Input LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETER Propagation Delay
SYMBOL TPLH1
(NOTES CONDITIONS 4.5V, 4.5V,
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CONDITIONS 1MHz NOTE Input Capacitance 1MHz Output Capacitance COUT 1MHz NOTE: parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which would affect these characteristics. TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
Spec Number
518838
Specifications HCS241MS
TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC VCC0.1 VCC0.1 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC 0.75 UNITS
PARAMETER Supply Current Output Current (Sink) Output Current (Source) Output Voltage
SYMBOL
(NOTES CONDITIONS 5.5V, 4.5V, VOUT 0.4V, 4.5V, VOUT 0.4V, 4.5V, 3.15V, 1.35V, 50µA 5.5V, 3.85V, 1.65V, 50µA
Output Voltage High
4.5V, 3.15V, 1.35V, -50µA 5.5V, 3.85V, 1.65V, -50µA
Three-State Output Leakage Current Input Leakage Current Noise Immunity Functional Propagation Delay
TPLH1 TPHL1 TPZL1 TPZL2 TPLZ1 TPLZ2 TPZH1 TPZH2 TPHZ1 TPHZ2
5.5V, Force Voltage 5.5V, 4.5V, 3.15V, 1.35V, (Note 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V, 4.5V,
NOTES: voltages referenced device GND. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP
PARAMETER IOL/IOH
DELTA LIMIT +12µA -15% Hour ±200nA
Spec Number
518838
Specifications HCS241MS
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup Subgroup Group NOTE: Alternate Group testing accordance with Method 5005 MIL-STD-883 exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups ICC, IOL/H, IOZL/H READ RECORD ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H
TABLE TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group Subgroup NOTE: Except test which will performed 100% Go/No-Go. TEST METHOD 5005 POST Table READ RECORD POST Table (Note
TABLE STATIC DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 0.5V 0.5V 50kHz 25kHz
STATIC BURN-IN TEST CONDITIONS (Note
STATIC BURN-IN TEST CONNECTIONS (Note
DYNAMIC BURN-IN TEST CONNECTIONS (Note NOTES: Each except will have series resistor Each except will have series resistor
TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V
NOTE: Each except will have series resistor Group Subgroup sample size dice/wafer, failures.
Spec Number
518838
HCS241MS Intersil Space Level Product Flow `MS'
Wafer Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, Samples/Wafer, Rejects 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Shear Monitor, Method 2019 2027 100% Internal Visual Inspection, Method 2010, Condition 100% Temperature Cycle, Method 1010, Condition Cycles 100% Constant Acceleration, Method 2001, Condition Method 5004 100% PIND, Method 2020, Condition 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T2) 100% Delta Calculation (T0-T2) 100% Method 5004 (Notes 1and 100% Dynamic Burn-In, Condition hrs., +125oC Equivalent, Method 1015 100% Interim Electrical Test (T3) 100% Delta Calculation (T0-T3) 100% Method 5004 (Note 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 100% External Visual, Method 2009 Sample Group Method 5005 (Note 100% Data Package Generation (Note
NOTES: Failures from Interim electrical test combined determining Failures from subgroup deltas used calculating PDA. maximum allowable with more than failures from subgroup Radiographic (X-Ray) inspection performed point after serialization allowed Method 5004. Alternate Group testing performed allowed MIL-STD-883, Method 5005. Data Package Contents: Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Date Code, Intersil Part Number, Number, Quantity). Wafer Acceptance Report (Method 5007). Includes reproductions photos with percent step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Dose, Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read Record data file Intersil. X-Ray report film. Includes penetrometer measurements. Screening, Electrical, Group attributes (Screening attributes begin after package seal). Serial Number Sheet (Good units serial number number). Variables Data (All Delta operations). Data identified serial number. Data header includes number date test. Certificate Conformance part shipping invoice part Data Book. Certificate Conformance signed authorized Quality Representative.
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
Spec Number
518838
HCS241MS Propagation Delay Timing Diagram Load Circuit
TPLH TPHL OUTPUT INPUT TEST POINT 50pF
VOLTAGE LEVELS PARAMETER ACTS 4.50 4.50 2.25 0.00 UNITS
Three-State High Timing Diagram Load Circuit
TPZH TPHZ OUTPUT INPUT TEST POINT 50pF
THREE-STATE HIGH VOLTAGE LEVELS PARAMETER ACTS 4.50 4.50 2.25 2.25 3.60 0.00 UNITS
Three-State Timing Diagram Load Circuit
TPZL TPLZ OUTPUT INPUT TEST POINT 50pF
THREE-STATE VOLTAGE LEVELS 4.50 4.50 2.25 2.25 0.90 0.00 UNITS
Spec Number
518838
HCS241MS Characteristics
DIMENSIONS: mils METALLIZATION: Type: AlSi Metal Thickness: GLASSIVATION: Type: SiO2 WORST CASE CURRENT DENSITY: 105A/cm2 BOND SIZE: 100µm 100µm mils mils
Metallization Mask Layout
HCS241MS
(20)
(19)
(3)BO4
(18)
(17)
(16) (15)
(14)
(10)
(11)
(12)
(13)
Spec Number
518838
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