Radiation Hardened Dual 4-Input NAND Gate Pinouts LEAD CERAM

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Radiation Hardened Dual 4-Input NAND Gate Pinouts LEAD CERAM

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HCS20MS
Radiation Hardened Dual 4-Input NAND Gate
Pinouts
LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T14, LEAD FINISH VIEW
Features
Micron Radiation Hardened CMOS Total Dose 200K (Si) Effective Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity 10-9 Errors/Bit-Day (Typ) Dose Rate Survivability: 1012 (Si)/s Dose Rate Upset >1010 (Si)/s 20ns Pulse Latch-Up Free Under Conditions Military Temperature Range: -55oC +125oC Significant Power Reduction Compared LSTTL Operating Voltage Range: 4.5V 5.5V Input Logic Levels Input Current Levels VOL,
LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-183S CDFP3-F14, LEAD FINISH VIEW
Description
Intersil HCS20MS Radiation Hardened Dual 4-Input NAND Gate. input forces output High state. HCS20MS utilizes advanced CMOS/SOS technology achieve high-speed operation. This device member radiation hardened, high-speed, CMOS/SOS Logic Family. HCS20MS supplied lead Ceramic flatpack suffix) SBDIP Package suffix).
Functional Diagram
Ordering Information
PART NUMBER HCS20DMSR TEMPERATURE RANGE -55oC +125oC SCREENING LEVEL Intersil Class Equivalent Intersil Class Equivalent Sample PACKAGE Lead SBDIP
HCS20KMSR
-55oC +125oC
Lead Ceramic Flatpack Lead SBDIP
TRUTH TABLE INPUTS OUTPUTS
HCS20D/ Sample HCS20K/ Sample HCS20HMSR
+25oC
+25oC
Sample
Lead Ceramic Flatpack
+25oC
NOTE: Logic Level Low, Logic level High, Don't Care
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
Spec Number File Number
518761 3050.1
Specifications HCS20MS
Absolute Maximum Ratings
Supply Voltage -0.5V +7.0V Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Drain Current, Output. .±25mA (All Voltage Reference Terminal) Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (Soldering 10sec) +265oC Junction Temperature (TJ) +175oC Classification Class
Reliability Information
Thermal Resistance SBDIP Package. 74oC/W 24oC/W Ceramic Flatpack Package 116oC/W 30oC/W Maximum Package Power Dissipation +125oC Ambient SBDIP Package. 0.68W Ceramic Flatpack Package 0.43W device power exceeds package dissipation capability, provide heat sinking derate linearly following rate: SBDIP Package. 13.5mW/oC Ceramic Flatpack Package 8.6mW/oC
CAUTION: with semiconductors, stress listed under "Absolute Maximum Ratings" applied devices (one time) without resulting permanent damage. This stress rating only. Exposure absolute maximum rating conditions extended periods affect device reliability. conditions listed under "Electrical Performance Characteristics" only conditions recommended satisfactory device operation.
Operating Conditions
Supply Voltage +4.5V +5.5V Input Rise Fall Times 4.5V (TR, .100ns Operating Temperature Range (TA) -55oC +125oC Input Voltage (VIL). 0.0V Input High Voltage (VIH)
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Output Current (Sink) 4.5V, 4.5V, VOUT 0.4V, Output Current (Source) 4.5V, 4.5V, VOUT -0.4V, 4.5V, 3.15V, 50µA, 1.35V 5.5V, 3.85V, 50µA, 1.65V Output Voltage High 4.5V, 3.15V, -50µA, 1.35V 5.5V, 3.85V, -50µA, 1.65V Input Leakage Current 5.5V, LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC -4.8 -4.0 UNITS
PARAMETER Quiescent Current
SYMBOL
(NOTE CONDITIONS 5.5V,
Output Voltage
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
-0.1 -0.1
+25oC, +125oC, -55oC
+25oC +125oC, -55oC +25oC, +125oC, -55oC
±0.5 ±5.0
Noise Immunity Functional Test
4.5V, 0.70(VCC), (Note 0.30(VCC)
NOTES: voltages reference device GND. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
Spec Number
518761
Specifications HCS20MS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS Data Output TPLH 4.5V NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
PARAMETER Data Output
SYMBOL TPHL
(NOTES CONDITIONS 4.5V
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CONDITIONS 5.0V, 1MHz NOTES Input Capacitance 5.0V, 1MHz Output Transition Time TTHL TTLH 4.5V NOTE: parameters listed Table controlled design process parameters. Limits guaranteed directly tested. These parameters characterized upon initial design release upon design changes which affect these characteristics. TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC UNITS
TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS PARAMETER Quiescent Current Output Current (Sink) SYMBOL (NOTES CONDITIONS 5.5V, 4.5V, GND, VOUT 0.4V 4.5V, GND, VOUT -0.4V 4.5V 5.5V, 0.70(VCC), 0.30(VCC), 50µA 4.5V 5.5V, 0.70(VCC), 0.30(VCC), -50µA 5.5V, TEMPERATURE +25oC +25oC UNITS
Output Current (Source) Output Voltage
+25oC
-4.0
+25oC
Output Voltage High
+25oC
-0.1
Input Leakage Current
+25oC
Spec Number
518761
Specifications HCS20MS
TABLE POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K LIMITS PARAMETER Noise Immunity Functional Test Input SYMBOL (NOTES CONDITIONS 4.5V, 0.70(VCC), 0.30(VCC), (Note 4.5V 4.5V TEMPERATURE +25oC UNITS
TPHL TPLH
+25oC +25oC
NOTES: voltages referenced device GND. measurements assume 500, 50pF, Input 3ns, GND, VCC. functional tests, 4.0V recognized logic "1", 0.5V recognized logic "0".
TABLE BURN-IN OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP SUBGROUP
PARAMETER IOL/IOH
DELTA LIMIT -15% Hour
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Interim Test (Postburn-In) Final Test Group (Note Group Subgroup Subgroup Group METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP SUBGROUPS Deltas Deltas Deltas Subgroups ICC, IOL/H READ RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
NOTE: Alternate Group testing accordance with Method 5005 MIL-STD-883 exercised.
Spec Number
518761
Specifications HCS20MS
TABLE TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group Subgroup NOTE: Except test which will performed 100% Go/No-Go. METHOD 5005 POST Table READ RECORD POST Table (Note
TABLE STATIC DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 0.5V 0.5V 50kHz 25kHz
STATIC BURN-IN TEST CONDITIONS (Note
STATIC BURN-IN TEST CONNECTIONS (Note
DYNAMIC BURN-IN TEST CONNECTIONS (Note
NOTES: Each except will have resistor static burn-in. Each except will have resistor dynamic burn-in.
TABLE IRRADIATION TEST CONNECTIONS OPEN GROUND 0.5V
NOTE: Each except will have resistor irradiation testing. Group Subgroup sample size dice/wafer failures.
Spec Number
518761
HCS20MS Intersil Space Level Product Flow `MS'
Wafer Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, Samples/Wafer, Rejects 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Shear Monitor, Method 2019 2027 100% Internal Visual Inspection, Method 2010, Condition 100% Temperature Cycle, Method 1010, Condition Cycles 100% Constant Acceleration, Method 2001, Condition Method 5004 100% PIND, Method 2020, Condition 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In Condition hrs. min., +125oC min., Method 1015 100% Interim Electrical Test (T2) 100% Delta Calculation (T0-T2) 100% Method 5004 (Notes 1and 100% Dynamic Burn-In, Condition hrs., +125oC Equivalent, Method 1015 100% Interim Electrical Test (T3) 100% Delta Calculation (T0-T3) 100% Method 5004 (Note 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 100% External Visual, Method 2009 Sample Group Method 5005 (Note 100% Data Package Generation (Note
NOTES: Failures from Interim electrical test combined determining Failures from subgroup deltas used calculating PDA. maximum allowable with more than failures from subgroup Radiographic (X-Ray) inspection performed point after serialization allowed Method 5004. Alternate Group testing performed allowed MIL-STD-883, Method 5005. Data Package Contents: Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Date Code, Intersil Part Number, Number, Quantity). Wafer Acceptance Report (Method 5007). Includes reproductions photos with percent step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Dose, Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read Record data file Intersil. X-Ray report film. Includes penetrometer measurements. Screening, Electrical, Group attributes (Screening attributes begin after package seal). Serial Number Sheet (Good units serial number number). Variables Data (All Delta operations). Data identified serial number. Data header includes number date test. Certificate Conformance part shipping invoice part Data Book. Certificate Conformance signed authorized Quality Representative.
Spec Number
518761
HCS20MS Timing Diagrams
TPLH TPHL TTLH TTHL OUTPUT 50pF INPUT
Load Circuit
TEST POINT
OUTPUT
VOLTAGE LEVELS PARAMETER 4.50 4.50 2.25 UNITS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
Spec Number
518761
HCS20MS Characteristics
DIMENSIONS: mils 2.20mm 2.24mm METALLIZATION: Type: AlSi Metal Thickness: GLASSIVATION: Type: SiO2 Thickness: WORST CASE CURRENT DENSITY: <2.0 105A/cm2 BOND SIZE: 100µm 100µm mils
Metallization Mask Layout
HCS20MS
(14) (13)
(12)
(11)
(10)
Spec Number
518761

Radiation Hardened Dual 4-Input NAND Gate Pinouts LEAD CERAM

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