3025.3 Radiation Hardened Noise Quad Operational Amplifier H

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3025.3 Radiation Hardened Noise Quad Operational Amplifier H

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HS-5104ARH
3025.3
Radiation Hardened Noise Quad Operational Amplifier
HS-5104ARH radiation hardened, monolithic quad operational amplifier that provides highly reliable performance harsh radiation environments. excellent noise characteristics coupled with unique array dynamic specifications make this amplifier well-suited variety satellite system applications. Dielectrically isolated, bipolar processing makes this device immune Single Event Latch-Up. HS-5104ARH shows almost change offset voltage after exposure 100kRAD(Si) gamma radiation, with only minor increase current. Complementing these specifications post radiation open loop gain excess 40K. This quad operational amplifier available industry standard pinout, allowing immediate interchangeability with most other quad operational amplifiers. Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed here must used when ordering. Detailed Electrical Specifications these devices contained 5962-95690. "hot-link" provided homepage downloading.
Features
Electrically Screened 5962-95690 Qualified MIL-PRF-38535 Requirements Radiation Environment Gamma Dose 105RAD(Si) Noise 1kHz 4.3nV/Hz (Typ) 1kHz 0.6pA/Hz (Typ) Offset Voltage 3.0mV (Max) High Slew Rate 2.0V/µs (Typ) Gain Bandwidth Product 8.0MHz (Typ)
Applications
High Active Filters Voltage Regulators Integrators Signal Generators Voltage References Space Environments
Ordering Information
ORDERING NUMBER 5962R9569001V9A 5962R9569001VCC 5962R9569001VXC INTERNAL MKT. NUMBER HS0-5104ARH-Q HS1-5104ARH-Q HS9-5104ARH-Q TEMP. RANGE (oC)
HS1-5104ARH/PROTO HS1-5104ARH/PROTO
Pinouts
HS-5104ARH (SBDIP) CDIP2-T14 VIEW
-IN1 +IN1 +IN2 -IN2 -IN4 +IN4 V+IN3 -IN3 -IN1 +IN1 +IN2 -IN2
HS-5104ARH (FLATPACK) CDFP3-F14 VIEW
-IN4 +IN4 V+IN3 -IN3
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
HS-5104ARH Burn-In Circuit
Irradiation Circuit
+15V
-15V (ONE FOUR)
NOTES: -15V Group Sample Size Wafer
NOTES: 1MW, 1/4W (Min) 0.01µF/Socket (Min) 0.1µF/Row (Min) IN4002 Equivalent/Board |(V+) (V-)|
HS-5104ARH Characteristics
DIMENSIONS: mils mils mils mils (2420µm 2530µm 483µm ±25.4µm) INTERFACE MATERIALS: Glassivation: Type: Nitride (SI3N4) over Silox (SIO2, Phos.) Silox Thickness: Nitride Thickness: Metallization: Type: Thickness: Substrate: Bipolar Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): Unbiased ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 A/cm2 Transistor Count:
Metallization Mask Layout
HS-5104ARH
+IN2 +IN1
-IN2
-IN1
OUT2 OUT3
OUT1 OUT4
-IN3
-IN4
+IN3
+IN4
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com

3025.3 Radiation Hardened Noise Quad Operational Amplifier H

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