1906.2 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET 2N6784

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

1906.2 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET 2N6784

Datasheet Thumbnail

Top Searches for this datasheet

2N6784
1906.2
2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET
2N6784 N-Channel enhancement mode silicon gate power field effect transistor designed applications such switching regulators, switching converters, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. This type operated directly from integrated circuits.
Features
2.25A, 200V rDS(ON) 1.500 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device
Ordering Information
PART NUMBER 2N6784 PACKAGE TO-205AF BRAND 2N6784
Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
NOTE: When ordering, entire part number.
Symbol
Packaging
JEDEC TO-205AF
DRAIN (CASE)
SOURCE
GATE
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
2N6784
Absolute Maximum Ratings
25oC, Unless Otherwise Specified 2N6784 2.25 2.25 0.12 UNITS W/oC
Drain Source Breakdown Voltage (Note Drain Gate Voltage (RGS 20k) (Note .VDGR Continuous Drain Current 100oC Pulsed Drain Current (Note Gate Source Voltage Continuous Source Current (Body Diode) Pulse Source Current (Body Diode). Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 0.25mA, VDS, 0.5mA 200V, 160V, 125oC 25V, 1MHz (Figure Free Operation 1000 3.37 ±100 1.500 2.81 8.33 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note Gate Source Leakage Current Drain Source Resistance (Note
VDS(ON) IGSS rDS(ON)
2.25A, ±20V 1.5A, 10V, 25oC 1.5A, 10V, 125oC
Diode Forward Voltage Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
td(ON) td(OFF) CISS COSS CRSS
2.25A, 1.5A 75V, 1.5A, (Figure MOSFET Switching Times Essentially Independent Operating Temperature
Source Drain Diode Specifications
PARAMETER Reverse Recovery Time Reverse Recovered Charge NOTES: Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal impedance curve (Figure SYMBOL TEST CONDITIONS 150oC, 2.25A, dISD/dt 100A/µs 150oC, 2.25A, dISD/dt 100A/µs UNITS
2N6784 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT
Unless Otherwise Specified
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
THERMAL IMPEDANCE ZJC, NORMALIZED 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION
NOTES: DUTY FACTOR: t1/t2 PEAK
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
DRAIN CURRENT 10µs 100µs 10ms 100ms OPERATION THIS AREA LIMITED rDS(ON) DRAIN CURRENT
PULSE TEST 80µs
0.05
25oC RATED SINGLE PULSE
VDS, DRAIN SOURCE VOLTAGE
1000
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE OUTPUT CHARACTERISTICS
2N6784 Typical Performance Curves
PULSE TEST 80µs DRAIN CURRENT
Unless Otherwise Specified (Continued)
80µs PULSE TEST -55oC 25oC 125oC
DRAIN CURRENT
4.0V VDS, DRAIN SOURCE VOLTAGE
VSD, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
rDS(ON), ON-STATE RESISTANCE 80µs PULSE TEST NORMALIZED RESISTANCE
FIGURE TRANSFER CHARACTERISTICS
10V, 1.25A
DRAIN CURRENT
JUNCTION TEMPERATURE (oC)
NOTE: Heating effect pulse minimal. FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1.25 NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
1MHz CISS CRSS COSS
1.15 CAPACITANCE (pF)
1.05
0.95
CISS COSS CRSS
0.85
0.75
JUNCTION TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
2N6784 Typical Performance Curves
gfs, TRANSCONDUCTANCE
Unless Otherwise Specified (Continued)
80µs PULSE TEST -55oC IDR, REVERSE DRAIN CURRENT
80µs PULSE TEST
25oC 125oC
150oC
25oC
DRAIN CURRENT
VSD, SOURCE DRAIN VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE SOURCE DRAIN DIODE VOLTAGE
VGS, GATE SOURCE VOLTAGE
100V 160V
TOTAL GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
2N6784 Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
BVDSS
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY)
Qg(TOT)
BATTERY
0.2µF
0.3µF
SAME TYPE
IG(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
2N6784
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029

1906.2 2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET 2N6784

Top Searches for this datasheet

Other recent searches