-12A, -100V, P-Channel Enhancement Mode Power Field Effect Transistor

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

-12A, -100V, P-Channel Enhancement Mode Power Field Effect Transistor

Datasheet Thumbnail

Top Searches for this datasheet

2N6897
-12A, -100V, P-Channel Enhancement Mode Power Field Effect Transistor
2N6897 P-Channel enhancement mode silicon gate power field effect transistor designed applications such switching regulators, switching converters, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. This device operated directly from integrated circuit.
Features
-12A, -100V rDS(ON) Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device
Symbol
Ordering Information
PART NUMBER 2N6897 PACKAGE TO-204AA BRAND 2N6897
NOTE: When ordering, include entire part number.
Packaging
JEDEC TO-204AA
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
File Number
1875.1
2N6897
Absolute Maximum Ratings
25oC, Unless Otherwise Specified 2N6897 -100 -100 UNITS W/oC
Drian Source Voltage BVDSS Drian Gate Voltage (RGS VDGR Continuous Drain Current Continuous Pulsed Drain Current. Gate Source Voltage. Maximum Power Dissipation 25oC Above 25oC, Derate Linearly Operating Storage Junction Temperature Range TSTG Maximum Lead Temperature Soldering. distance (3.17mm) from seating plane max)
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
Electrical Specifications
PARAMETER Drian Source Breakdown Voltage Gate Threshold Voltage Zero-Gate Voltage Drain Current Zero-Gate Voltage Drain Current 125oC Gate Source Leakage Current
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 1mA, VDS, 0.25mA -80V -80V IGSS VDS(ON) rDS(ON) 20V, 7.6A, -10V =12A, -10V 7.6A, -10V 7.6A, CISS COSS CRSS td(ON) td(OFF) 7.6A, -50V RGEN -10V 7.6A, -10V -25V 0.1MHz -100 2.28 -4.8 0.465 1500 1.25
oC/W
UNITS
Drian Source On-Voltage (Note
Static Drian Source Resistance (Note Static Drian Source Resistance 125oC (Note Forward Transconductance (Note Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction-to-Case
Source Drain Diode Specifications
PARAMETER Diode Forward Voltage (Note Diode Reverse Recovery Time NOTE: Pulsed: pulse duration 300µs, max, duty cycle SYMBOL TEST CONDITIONS dIF/dt 100A/µs UNITS
2N6897 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT
Unless Otherwise Specified
25oC RATED 100µs 1.0ms 10ms OPERATION THIS AREA LIMITED rDS(ON) 100ms VDSS(MAX) 100V 0.01 VDS, DRAIN SOURCE 1000
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION TEMPERATURE DERATING CURVE
FIGURE MAXIMUM OPERATING AREAS CURVE
Id(ON), ON-STATE DRAIN CURRENT rDS(ON), DRAIN SOURCE RESISTANCE 125oC 125oC -40oC PULSE TEST PULSE DURATION 80µs DUTY CYCLE 25oC -40oC
PULSE TEST PULSE DURATION 80µs DUTY CYCLE 125oC
25oC -40oC
DRAIN CURRENT
VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE FUNCTION DRAIN CURRENT
VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE 0.25mA
NORMALIZED DRAIN SOURCE
7.6A
RESISTANCE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED rDS(ON) JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
2N6897 Typical Performance Curves
2400 2000
CAPACITANCE
Unless Otherwise Specified (Continued)
gfs, FORWARD TRANSCONDUCTANCE
1MHz
DRAIN CURRENT
-40oC 25oC
1600 1200 COSS CRSS VDS, DRAIN SOURCE VOLTAGE CISS
125oC
FIGURE CAPACITANCE VOLTAGE
FIGURE FORWARD TRANSCONDUCTANCE FUNCTION DRAIN CURRENT
Test Circuit Waveforms
PULSE WIDTH td(ON) tOFF td(OFF)
FIGURE RESISTIVE SWITCHING TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029

-12A, -100V, P-Channel Enhancement Mode Power Field Effect Transistor

Top Searches for this datasheet

Other recent searches