55,2 11,85 screwing depth max. screwing depth max. 31,5 deep

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55,2 11,85 screwing depth max. screwing depth max. 31,5 deep

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55,2 11,85 screwing depth max. screwing depth max.
31,5
deep
deep
06.04.1998
Elektrische Eigenschaften Electrical properties
Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Grenzlastintegral Diode Kollektor-Emitter Gate-Schwellenspannung Kollektor-Emitter Reststrom Gate-Emitter Reststrom (induktive Last) collector-emitter voltage DC-collector current repetitive peak collector current total power dissipation gate-emitter peak voltage forward current repetitive peak forw. current value, Diode insulation test voltage collector-emitter saturation voltage gate threshold voltage input capacitance collector-emitter cut-off current gate-emitter leakage current turn-on delay time (inductive load) 80°C 25°C 80°C 25°C, Transistor VCES IC,nom. ICRM Ptot VGES IFRM VISOL vGE(th) Cies ICES IGES td,on min. td,off Eoff LsCE 800A, 25°C 800A, 125°C 800A, diF/dt 3500A/µsec 900V, -10V, 25°C 900V, -10V, 125°C 800A, diF/dt 3500A/µsec 900V, -10V, 25°C 900V, -10V, 125°C 800A, diF/dt 3500A/µsec 900V, -10V, 25°C 900V, -10V, 125°C Transistor transistor, Erec RthJC RthCK
Daten preliminary data 1600 1600 1600 6,25 1600 typ. 0,13 3200 2,05 max. kA2s
10ms, 125°C RMS, min. 800A, 15V, 25°C 800A, 15V, 125°C 65mA, VGE, 25°C 1MHz,Tvj 25°C,VCE 25V, 1600V, 25°C 1600V, 125°C 20V, 25°C 800A, 900V ±15V, 1,8, 25°C ±15V, 1,8, 125°C 800A, 900V ±15V, 1,8, 25°C ±15V, 1,8, 125°C 800A, 900V ±15V, 1,8, 25°C ±15V, 1,8, 125°C 800A, 900V ±15V, 1,8, 25°C ±15V, 1,8, 125°C 800A, 900V, 1,8, 125°C, 60nH 800A, 900V, 1,8, 125°C, 60nH 10µsec, 15V, Vj125°C, VCC=1000V VCEmax=VCES -LsCE dI/dt
Charakteristische Werte Characteristic values: Transistor
0,02 0,034 0,016 8-10 1500
Anstiegszeit (induktive Last)
rise time (inductive load)
(ind. Last)
turn delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie Puls Abschaltverlustenergie Puls
turn-on energy loss pulse turn-off energy loss pulse Data
stray inductance module forward voltage peak reverse recovery current
Charakteristische Werte Characteristic values: Diode
recovered charge
Abschaltenergie Puls
reverse recovery energy
Thermische Eigenschaften Thermal properties
Innerer Sperrschichttemperatur Betriebstemperatur Lagertemperatur Innere Isolation Kriechstrecke Luftstrecke Anzugsdrehmoment mech. Befestigung Anzugsdrehmoment elektr. Gewicht thermal resistance, junction case Diode diode, thermal resistance, case heatsink Module Module dPaste 100µm dgrease 100µm max. junction temperature operating temperature storage temperature internal insulation creepage distance clearance comperative tracking index mounting torque terminal connection torque weight
Mechanische Eigenschaften Mechanical properties
terminals terminals
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with belonging technical notes.
1800 1600 IC1400 1200 1000
25°C 125°C
1800 1600 IC1400 1200 1000
Bild Fig. Ausgangskennlinie (typisch) Output characteristic (typical) f(VCE) 1800 1600 IC1400 1200 1000
Bild Fig. Ausgangskennlinienfeld (typisch) Output characteristic (typical) f(VCE) 125°C 1800 1600
25°C 125°C
IF1400 1200 1000
25°C 125°C
Bild Fig. (typisch) Transfer characteristic (typical) f(VGE) 1600 1400 1200 [mJ] 1000 1000 1200
Bild Fig. Inversdiode (typisch) Forward characteristic inverse diode (typical) f(VF)
1000 Eoff Erec [mJ] Eoff Erec
1400 1600 1800
Bild Fig. Schaltverluste (typisch) Switching losses (typical) f(IC), Eoff f(IC), Erec f(IC) Rgon Rgoff 1,8, 900V, 125°C
Bild Fig. Schaltverluste (typisch) Switching losses (typical) f(RG), Eoff f(RG), Erec f(RG) 800A, 900V, 125°C
1800 1600 ZthJC [K/W] 1400 1200 1000 0,01
Zth: Diode Zth: IGBT
IC,Modul IC,Chip
0,001 0,001
0,01 [sec] 1000 1200
1400 1600 1800
Bild Fig. Tranienter Transient thermal impedance ZthJC f(t) [K/kW] IGBT [sec] IGBT [K/kW] Diode Diode 1,88 0,027 15,7 0,0287 9,43 0,052 7,05 0,0705 2,85 0,09 2,24 0,153 5,84 0,838 9,05 0,988
Bild Fig. Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 1,8, 125°C

55,2 11,85 screwing depth max. screwing depth max. 31,5 deep

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