Cathod Anod 1200 1000 Fig. Limiting on-state chara

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Cathod Anod 1200 1000 Fig. Limiting on-state chara

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Marketing Information 22.25
Cathod
Anod
1200
1000
Fig. Limiting on-state characteristics f(VF)
125°C Upper limit scatter range Lower limit scatter range
S_01
January 1996
Schnelle Gleichrichterdiode Fast Diode Elektrische Eigenschaften Electrical properties Werte Maximum rated values
Periodische Spitzensperrspannung repetitive peak reverse voltage non-repetitive peak reverse voltage forward current Dauergrenzstrom mean forward current surge forward current Grenzlastintegral +25°C.tvj 85°C 69°C 25°C, tp=10 max., 25°C, tp=10 max., IFSM VRSM IFRMSM IFAVM -25°C.tvj VRRM
22.25
2200 2500 2300 2600 3600 3200 64800 51200
Charakteristische Werte Characteristic values
forward voltage Schleusenspannung threshold voltage Ersatzwiderstand forward slope resistance Spitzenwert peak value forward recovery voltage forward recovery time Sperrstrom reverse current peak reverse recovery current max., max. max. max., iFAVM diF/dt A/µs, max., diF/dt diF/dt A/µs, 25°C, VRRM max., VRRM -diF/dt A/µs VRRM, VRRM max. recovered charge reverse recovered time Sanftheit Softness -diF/dt A/µs VRRM, VRRM max. -diF/dt A/µs VRRM, VRRM max. -diF/dt A/µs VRRM, VRRM max.
0,003 µs/A
V(TO) VFRM
max. 2,12 1,18 max. max.
Thermische Eigenschaften Thermal properties
Innerer thermal resistance, junction case cooling surface beidseitig two-sided, 180°sin beidseitig two-sided, Anode anode, 180°sin Anode anode, Kathode cathode, 180°sin Kathode cathode, thermal resistance, case heatsink Sperrschichttemp./ max.junction temperat. Betriebstemperatur operating temperature Lagertemperatur storage temperature cooling surface beidseitig two-sided einseitig single-sided tstg RthCK 0,015 °C/W 0,03 °C/W -40.+125 -40.+150 RthJC max. 0,08 °C/W max. 0,075 °C/W max. 0,125 °C/W max. 0,12 °C/W max. 0,205 °C/W max. °C/W
Mechanische Eigenschaften Mechanical properties
siehe Anlage case, appendix Si-Elemente Druckkontakt Si-pellets with pressure contact /clamping force Gewicht weight Kriechstrecke creepage distance Feuchteklasse humidity classification Schwingfestigkeit vibration resistance 40040 Durchmesser diameter 3,2.7,6 typ. Seite
dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. gilt Verbindung Technischen This technical information specifies semiconductor devices promises characteristics. valid combination with belonging technical notes.
Richtwert obere Streubereichsgrenze Upper limit scatter range (standard value) Richtwert untere Streubereichsgrenze Lower limit scatter range (standard value)

Cathod Anod 1200 1000 Fig. Limiting on-state chara

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