VDSS 1400 1600 1400 1600 1400 1600 1400 1600 IC(cont) VCE(sat) 25°C IX
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BIMOSFET B-Series
VDSS 1400 1600 1400 1600 1400 1600 1400 1600 IC(cont) VCE(sat) 25°C IXBH 9N140 IXBH 9N160 IXBH 15N140 IXBH 15N140 IXBH 20N140 IXBH 20N160 IXBH 40N140 IXBH 40N160
TO-247
Page
1999 IXYS rights reserved
Advanced Technical Information
High Voltage BIMOSFETMonolithic Bipolar Transistor
N-Channel, Enhancement Mode
IXBH 9N140 IXBH 9N160
VCES IC25 VCE(sat)
TO-247
1400/1600 typ.
Gate, Emitter, Collector, Collector
(TAB)
Symbol VCES VCGR VGES VGEM IC25 IC90 SSOA (RBSOA) Tstg Weight
Conditions 25°C 150°C 25°C 150°C; Continuous Transient 25°C, 90°C 25°C,
Maximum Ratings 9N140 9N160 1400 1400 1600 1600
Features
125°C, Clamped inductive load, 25°C +150 +150 (0.063 from case Mounting torque
International standard package JEDEC TO-247 High Voltage BIMOSFET- replaces high voltage Darlingtons series connected MOSFETs lower effective RDS(on) Monolithic construction high blocking voltage capability very fast turn-off characteristics Gate turn-on drive simplicity Reverse conducting capability
Applications
1.15/10 Nm/lb.in.
Flyback converters choppers Uninterruptible power supplies (UPS) Switched-mode resonant-mode power supplies deflection Lamp ballasts
Symbol
Conditions
Characteristic Values 25°C, unless otherwise specified) min. typ. max. 9N140 9N160 1400 1600 25°C 125°C 125°C
Advantages
BVCES VGE(th) ICES IGES VCE(sat)
Easy mount with screw (isolated mounting screw hole) Space savings High power density
VCES IC90,
1999 IXYS rights reserved
Advanced Technical Information
IXBH 9N140 IXBH 9N160
TO-247 Outline
Symbol
Conditions
Characteristic Values 25°C, unless otherwise specified) min. typ. max. 1.25 0.25
Cies Coes Cres td(on) td(off) RthJC RthCK Inductive load, 125°C IC90,
Dim.
Reverse Conduction
Characteristic Values 25°C, unless otherwise specified) Conditions min. typ. max.
Symbol
IC90, Pulse test, duty cycle
Millimeter Min. Max. 2.54 1.65 2.13 2.87 3.12 20.80 21.46 15.75 16.26 5.20 5.72 19.81 20.32 4.50 3.55 3.65 5.89 6.40 4.32 5.49 6.15
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
1999 IXYS rights reserved
Advanced Technical Information
High Voltage BIMOSFETMonolithic Bipolar Transistor
N-Channel, Enhancement Mode
IXBH 15N140 IXBH 15N160
VCES IC25 VCE(sat)
TO-247
1400/1600 typ.
Gate, Emitter, Collector, Collector
(TAB)
Symbol VCES VCGR VGES VGEM IC25 IC90 SSOA (RBSOA) Tstg Weight
Conditions 25°C 150°C 25°C 150°C; Continuous Transient 25°C, 90°C 25°C,
Maximum Ratings 15N140 15N160 1400 1400 1600 1600 +150 +150
Features
125°C, Clamped inductive load, 25°C
International standard package JEDEC TO-247 High Voltage BIMOSFET- replaces high voltage Darlingtons series connected MOSFETs lower effective RDS(on) Monolithic construction high blocking voltage capability very fast turn-off characteristics Gate turn-on drive simplicity Reverse conducting capability
Applications
(0.063 from case Mounting torque
1.15/10 Nm/lb.in.
Flyback converters choppers Uninterruptible power supplies (UPS) Switched-mode resonant-mode power supplies deflection Lamp ballasts
Symbol
Conditions
Characteristic Values 25°C, unless otherwise specified) min. typ. max. 15N140 15N160 1400 1600 25°C 125°C 125°C
Advantages
BVCES VGE(th) ICES IGES VCE(sat)
Easy mount with screw (isolated mounting screw hole) Space savings High power density
VCES IC90,
1999 IXYS rights reserved
Advanced Technical Information
IXBH 15N140 IXBH 15N160
TO-247 Outline
Symbol
Conditions
Characteristic Values 25°C, unless otherwise specified) min. typ. max. 1200 0.83 0.25
Cies Coes Cres td(on) td(off) RthJC RthCK Inductive load, 125°C IC90,
Dim.
Reverse Conduction
Characteristic Values 25°C, unless otherwise specified) Conditions min. typ. max.
Symbol
IC90, Pulse test, duty cycle
Millimeter Min. Max. 2.54 1.65 2.13 2.87 3.12 20.80 21.46 15.75 16.26 5.20 5.72 19.81 20.32 4.50 3.55 3.65 5.89 6.40 4.32 5.49 6.15
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
1999 IXYS rights reserved
Advanced Technical Information
IXBH 15N140 IXBH 15N160
25°C
125°C
Amperes
Amperes
Volts
Volts
Fig. Typ. Output Characteristics
Fig. Typ. Output Characteristics
Amperes
Amperes
125°C 25°C
125°C 25°C
Volts
Volts
Fig. Typ. Transfer Characteristics
Fig. Typ. Characteristics Reverse Conduction
600V
Amperes
Volts
125°C VCEK VCES
IXBH 15N140 IXBH 15N160
1200 1600
nanocoulombs
Volts
Fig. Typ. Gate Charge characteristics
Fig. Reverse Biased Safe Operating Area RBSOA
1999 IXYS rights reserved
Advanced Technical Information
IXBH 15N140 IXBH 15N160
960V
td(off) nanoseconds
nanoseconds
125°C
960V 125°C
Amperes
Ohms
Fig. Typ. Fall Time
Fig. Typ. Turn Delay Time
ZthJC
0.01
Single Pulse
0.001
0.0001 0.00001
IXBH15
0.0001
0.001
0.01
Pulse Width Seconds
Fig. Typ. Transient Thermal Impedance
1999 IXYS rights reserved
Advanced Technical Information
High Voltage BIMOSFETMonolithic Bipolar Transistor
N-Channel, Enhancement Mode
IXBH 20N140 IXBH 20N160
VCES IC25 VCE(sat)
TO-247
1400/1600 typ.
Gate, Emitter, Collector, Collector
(TAB)
Symbol VCES VCGR VGES VGEM IC25 IC90 SSOA (RBSOA) Tstg Weight
Conditions 25°C 150°C 25°C 150°C; Continuous Transient 25°C, 90°C 25°C,
Maximum Ratings 20N140 20N160 1400 1400 1600 1600 +150 +150
Features
125°C, Clamped inductive load, 25°C
International standard package JEDEC TO-247 High Voltage BIMOSFET- replaces high voltage Darlingtons series connected MOSFETs lower effective RDS(on) Monolithic construction high blocking voltage capability very fast turn-off characteristics Gate turn-on drive simplicity Reverse conducting capability
Applications
(0.063 from case Mounting torque
1.15/10 Nm/lb.in.
Flyback converters choppers Uninterruptible power supplies (UPS) Switched-mode resonant-mode power supplies deflection Lamp ballasts
Symbol
Conditions
Characteristic Values 25°C, unless otherwise specified) min. typ. max. 20N140 20N160 1400 1600 25°C 125°C 125°C
Advantages
BVCES VGE(th) ICES IGES VCE(sat)
Easy mount with screw (isolated mounting screw hole) Space savings High power density
VCES IC90,
1999 IXYS rights reserved
Advanced Technical Information
IXBH 20N140 IXBH 20N160
TO-247 Outline
Symbol
Conditions
Characteristic Values 25°C, unless otherwise specified) min. typ. max. 2100 0.25
Cies Coes Cres td(on) td(off) RthJC RthCK Inductive load, 125°C IC90,
Dim.
Reverse Conduction
Characteristic Values 25°C, unless otherwise specified) Conditions min. typ. max.
Symbol
IC90, Pulse test, duty cycle
Millimeter Min. Max. 2.54 1.65 2.13 2.87 3.12 20.80 21.46 15.75 16.26 5.20 5.72 19.81 20.32 4.50 3.55 3.65 5.89 6.40 4.32 5.49 6.15
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
1999 IXYS rights reserved
High Voltage BIMOSFETMonolithic Bipolar Transistor
N-Channel, Enhancement Mode
IXBH 40N140 IXBH 40N160
VCES IC25 VCE(sat)
TO-247
1400/1600 typ.
Preliminary data
Gate, Emitter, Collector, Collector
(TAB)
Symbol VCES VCGR VGES VGEM IC25 IC90 SSOA (RBSOA) Tstg Weight
Conditions 25°C 150°C 25°C 150°C; Continuous Transient 25°C, 90°C 25°C,
Maximum Ratings 40N140 40N160 1400 1400 1600 1600 +150 +150
Features
125°C, Clamped inductive load, 25°C
International standard package JEDEC TO-247 High Voltage BIMOSFET- replaces high voltage Darlingtons series connected MOSFETs lower effective RDS(on) Monolithic construction high blocking voltage capability very fast turn-off characteristics Gate turn-on drive simplicity Intrinsic diode
Applications
(0.063 from case Mounting torque
1.15/10 Nm/lb.in.
motor speed control servo robot drives choppers Uninterruptible power supplies (UPS) Switched-mode resonant-mode power supplies deflection Lamp ballasts
Advantages Symbol Conditions Characteristic Values 25°C, unless otherwise specified) min. typ. max. 40N140 40N160 1400 1600 25°C 125°C 125°C
IXYS reserves right change limits, test conditions dimensions.
BVCES VGE(th) ICES IGES VCE(sat)
Easy mount with screw (isolated mounting screw hole) Space savings High power density
VCES IC90,
1999 IXYS rights reserved
IXBH 40N140 IXBH 40N160
Symbol Conditions Characteristic Values 25°C, unless otherwise specified) min. typ. max. 3300 Inductive load, 125°C IC90, 0.35 0.25
Dim.
TO-247 Outline
Cies Coes Cres td(on) td(off) RthJC RthCK
Reverse Conduction
Characteristic Values 25°C, unless otherwise specified) Conditions min. typ. max.
Symbol
IC90, Pulse test, duty cycle
Millimeter Min. Max. 2.54 1.65 2.13 2.87 3.12 20.80 21.46 15.75 16.26 5.20 5.72 19.81 20.32 4.50 3.55 3.65 5.89 6.40 4.32 5.49 6.15
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
1999 IXYS rights reserved
IXBH 40N140 IXBH 40N160
25°C
125°C
Amperes
Amperes
Volts
Volts
Fig. Typ. Output Characteristics
Fig. Typ. Output Characteristics
Amperes
Amperes
125°C 25°C
25°C 125°C
Volts
Volts
Fig. Typ. Transfer Characteristics
Fig. Typ. Characteristics Reverse Conduction
600V
Amperes
Volts
125°C VCEK VCES
IXBH 40N140 IXBH 40N160
1200 1600
nanocoulombs
Volts
Fig. Typ. Gate Charge characteristics
Fig. Reverse Based Safe Operating Area RBSOA
1999 IXYS rights reserved
IXBH 40N140 IXBH 40N160
960V
td(off) nanoseconds
nanoseconds
125°C
960V 125°C
Amperes
Ohms
Fig. Typ. Fall Time
Fig. Typ. Turn Delay Time
ZthJC
0.01
Single Pulse
0.001
0.0001 0.00001
IXBH40
0.0001
0.001
0.01
Pulse Width Seconds
Fig. Typ. Transient Thermal Impedance
1999 IXYS rights reserved
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