Authors: Gladish Barry Wood high speed SMPS IGBTs being used more freq
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Interpreting SMPS IGBT Data Sheets
Authors: Gladish Barry Wood high speed SMPS IGBTs being used more frequently switch mode power supply designs, Intersil datasheets offering more information that relevant conditions that occur power supply environment. When IGBTs were first introduced, there generic device design that offered attractive features circuit designers various disciplines. However, IGBT matured, several varieties device emerged. Each type optimized specific application. Today, IGBTs have been specifically designed switch mode power supply, motor drives, lighting ballasts name few. Since each device type designed specific application, datasheets also being written reflect devices performance under typical conditions appropriate application. Intersil Corporation introduced family IGBTs (SMPS IGBTs) designed high frequency switch mode power supply industry. datasheet been designed reflect devices performance under typical switch mode power supply conditions. Interpreting datasheet trivial task. following discussion will break datasheet into parts explain each part detail. this page. However, device name also holds most this information. example, HGTG12N60A4D informs designer that part 12A, 600V, Intersil SMPS IGBT with co-pack diode TO-247 package. Below quick reference part nomenclature (Figure
Device Current Rating
Previous Intersil IGBT datasheets specified current level which caused case temperature maximum rated VCE(SAT) device reach 110oC with junction temperature 150oC rated current. infinite heat sink assumed. Example: HGTG20N60B3 VCE(SAT)MAX 2.5V, RJC(MAX) 0.75oC/W, TJ(MAX) 150oC, 110oC
JMAX CESATMAX JCMAX
calculated continuous collector current then rounded down small safety factor. current rating SMPS IGBT chosen using different philosophy. Since current that part handle little power supply designer, current rating chosen using approximately 100kHz target switching frequency device rated current. switching conditions 100kHz operation are: VCLAMP 390V, 125oC, 75oC, IRATED.
SMPS IGBT Datasheet
SMPS IGBT datasheet consists four parts. first part front page. This page gives general information about device. device name, voltage current rating, package options, device features
INTERSIL IGBT PACKAGE DESIGNATOR TO-252 (D-PAK) Lead TO-247 Lead TO-218 Lead TO-220 TO-263 (D2-PAK) TO-264 TO-268 (D3-PAK) CONTINUOUS CURRENT RATING (IC) Generation 90oC Generation NPT, 110oC 12A, POLARITY 30A, etc. N-Channel P-Channel VOLTAGE BREAKDOWN/10 i.e., 600V, 1200V)
SUFFIX Logic Level Gate Integral Reverse Diode Surface Mount Current Sense Voltage Clamping Tape Reel Rugged Performance First Generation Second Generation Third Generation Fourth Generation Punch Thru Series
FALL TIME 100ns 200ns 500ns 750ns
FIGURE PART NOMENCLATURE
1-888-INTERSIL 321-724-7143 Copyright
Intersil Corporation 1999
Application Note 9859
second part datasheet Absolute Maximum Ratings Electrical Specifications tables. Absolute Maximum Ratings table gives maximum electrical stresses that device handle without permanent damage. These ratings should never exceeded under circumstance. table also lists device's 25oC 110oC maximum continuous collector current ratings. Although these parameters have nothing with device current rating SMPS IGBT, they listed comparison purposes. Also listed this table Collector Current Pulsed (ICM) parameter. This maximum current that part guaranteed turn 25oC using resistive load. Electrical Specifications table used comparison purposes against competing devices also gives general information about device such typical saturation voltages, switching times energy losses device rated current, co-pack diode times pertinent. table gives guaranteed maximum switching times, energy losses, saturation voltages, thermal resistance, leakage current along with minimum guaranteed breakdown voltage switching safe operating area. These parameters vital device selection circuit designer, Intersil Corporation guarantees device will meet these limits. measurements. EON2 measured with IGBT diode same temperature 25oC 125oC). EON1 turn-on loss IGBT only. This value obtained testing IGBT with zener diode clamp (Figure This method excludes diode reverse recovery allows IGBT exhibit hard inductive turn-on. zener clamp method equivalent using `Ideal diode' only measures turn-on loss contributed IGBT. EON2 minus EON1 will give designer indication additional loss contributed real compared ideal case. characterize device EON2 circuit Figure driven pulse mode which produces waveforms similar those Figure device turned 10-20µs, depending IGBT type. This ensure that device fully turned on[1] while avoiding heating. device then turned under inductive load conditions. turn-off measurements taken this time. load current circulates through inductor after turn-off complete. After approximately 5µs, IGBT turned again. diode will recover through IGBT, turn-on data taken. important note that impedances kept possible when fabricating switching test fixtures. However, even parasitic impedances influence circuit measurements. During turn-off, parasitic inductance adds collector voltage overshoot, during turn-on, parasitic inductance subtracts collector voltage from clamp voltage while collector current rises. effects parasitic inductance included EOFF measurements. Similarly, parasitic capacitance influences switching measurements. During turn-off, parasitic capacitance divert current away from IGBT during collector voltage rise. effect similar using value turn-off capacitive snubber. effect greater smaller sizes (size since circuit layout parasitic capacitance fixed. diode capacitance also adds parasitic capacitance. circuit waveforms Figure show parasitic capacitance effects.
Switching Energy
circuit designer, independent turn-on energy loss numbers given (EON1 EON2). EON2 gives turn-on loss IGBT including reverse recovery energy free wheeling diode (FWD). specific diode type used shown Test Circuit Schematic data sheet. type varies with IGBT size. diode chosen based several factors: minimizing turn-on losses incurred IGBT during hard switching, limiting di/dt during diode recovery period adequate diode most important parameters considered during selection. IGBT offered package with co-pack diode, co-pack diode used switching energy
EOFF td(OFF)I td(ON)I EON2
FIGURE INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE INDUCTIVE SWITCHING WAVEFORMS
Application Note 9859
obtain device switching data junction temperatures other than room temperature, device placed heating block that user controlled. device case temperature stabilizes heating block temperature. During single pulse switching test, conduction switching losses very small, device will experience extremely small temperature rises power losses. Hence, case junction temperatures very close temperature. circuit Figure also pulse circuit, produces waveforms similar those Figure device turned time needed charge inductor adequate level then turned off. zener diode will clamp voltage desired level. data taken this time. After turn-off, load current will flow through zener diode. device then turned again after microseconds, diverting load current from zener diode through IGBT. EON1 measurement taken during this time. Since this circuit extremely lossy, inductor values device turn-on pulse widths have `tuned' achieve desired turn-on current level. incurred over switching interval. integral instantaneous power starting trailing edge gate voltage ending where current reaches zero (Figure measurements taken from rising edge gate voltage ending where collector voltage reaches VCE(SAT).
Typical Performance Curves
third section that data sheet contains Typical Performance Curves. performance curves HGTG12N60A4D used examples.
COLLECTOR CURRENT CASE TEMPERATURE (oC)
FIGURE
FIGURE EON1 INDUCTIVE SWITCHING TEST CIRCUIT NOTE: this circuit, discharge zener diode's junction capacitance adds IGBT loss during turn-on this circuit. additional loss shown Figure waveforms.
current derating curve, Figure represents maximum current part conduct selected case temperatures without exceeding maximum junction temperature rating 150oC. infinite heat sink assumed. This curve generated using highest allowed VCE(SAT) part 150oC maximum thermal resistance value calculate maximum allowable power dissipation each case temperature. Example, HGTG12N60A4 saturation curve generated with maximum rated VCE(SAT) device, (Figure Using 150oC, 25oC, RJC(MAX) 0.75 maximum power part dissipate given case temperature
JMAX 167W JCMAX
PARASITIC INDUCTANCE EFFECTS
EON1
PARASITIC CAPACITANCE EFFECTS
Knowing maximum allowable power dissipation, maximum current device conduct given VCE(SAT) level case temperature calculated. curves plotted same graph VCE(MAX) device (Figure intersection maximum power curve VCE(SAT) curve denote maximum current device conduct specified case temperature (e.g., 110oC, IC110 23A).
NOTE: Figure does appear data sheet. shown demonstrate procedure used determining current values.
FIGURE EON1 INDUCTIVE SWITCHING WAVEFORMS
Turn-Off switching loss measurements taken according JEDEC Standard 24-1 Method Power Turn-Off Loss. This method accounts turn-off switching losses
Application Note 9859
COLLECTOR EMITTER CURRENT 140oC 100oC 110oC 125oC 25oC 50oC 75oC fMAX, OPERATING FREQUENCY (kHz) 75oC
fMAX1 0.05 (td(OFF)I td(ON)I) fMAX2 (EON2 EOFF) CONDUCTION DISSIPATION (DUTY FACTOR 50%) 0.75oC/W, NOTES
125oC, 500µH, 390V
VCE(SAT), COLLECTOR EMITTER VOLTAGE
ICE, COLLECTOR EMITTER CURRENT
FIGURE
ICE(PK), COLLECTOR EMITTER CURRENT
FIGURE
150oC, 15V, 200µH
Operating frequency information typical device presented guide estimating device performance specific application (Figure Test conditions were chosen represent conditions most likely found switch mode power supplies: TJ(MAX) 125oC, 390V, 500µH, 15V. first step calculating maximum operating frequency determine total allowable power dissipation part. case HGTG12N60A4 operated with case temperature 75oC, RJC(MAX) 0.75,
JMAX 66.67W JCMAX
VCE(PK), COLLECTOR EMITTER VOLTAGE
Next conduction loss calculated. duty cycle with maximum junction temperature 125oC rated current 12A. maximum VCE(SAT) 125oC 2.0V.
DutyCycle
FIGURE
Contrary this sections heading "Typical Performance Curves" Minimum Switching Safe Operating Area curve (Figure guaranteed rating devices. curve intended inform designer maximum voltage current device handle during turn-off transients. Operating device outside this curve cause parasitic thyristor IGBT latch During latch-up, IGBT behaves thyristor, gate control lost resulting failure IGBT turn possible destruction device. this chart, collector emitter voltage collector emitter current refer simultaneous voltages currents. This includes overshoots normally encountered during fast switching.
Total switching loss consists EOFF either EON1 EON2 depending whether application losses FWD. These loss numbers well VCE(SAT) found from EOFF, EON, on-state voltage curves. These numbers used calculate fMAX2 capability typical device. example will EOFF 175µJ EON2 250µJ. Total switching loss 425µJ. This loss occurs once each cycle maximum operating frequency fMAX2
66.67W MAX2 128kHz 175µJ 250µJ
There another condition that limit maximum operating frequency. referred data sheet fMAX1. based delays between gate voltage collector current. fMAX1 defined
Application Note 9859
ICE, COLLECTOR EMITTER CURRENT 150oC 125oC
0.05 0.05 MAX1 391kHz 110ns 17ns
DUTY CYCLE 0.5%, PULSE DURATION 250µs
Dead time (the denominator) been arbitrarily held on-state time duty factor. Other definitions possible. td(OFF)I td(ON)I defined Figure maximum operating frequency lesser fMAX1 fMAX2
SHORT CIRCUIT WITHSTAND TIME (µs) 390V, 125oC ISC, PEAK SHORT CIRCUIT CURRENT
25oC VCE, COLLECTOR EMITTER VOLTAGE
FIGURE
GATE EMITTER VOLTAGE
FIGURE
Figure typical Short Circuit Withstand Time curve. These curves describe behavior IGBT during condition which load IGBT shorted. condition implies IGBT connected directly through shorted load then turned (When IGBT used SMPS power supply does imply power supply load shorted.) During short circuit, IGBT will dissipate tremendous amount energy since experiences simultaneous high peak current that determined gate voltage voltage. curve denotes peak current short circuit time typical device withstand still turned without failure. (e.g., typical device will withstand short with voltage 390V. short circuit current will 175A during fault.) Caution: This guaranteed rating curve. shown informational purposes portray typical part behaves under device short circuit conditions. Currently, SMPS IGBT does have guaranteed short circuit rating.
Figures typical Collector Emitter On-State Voltages different gate voltages (12V 15V). test performed using 250µs pulse width avoid device heating. V(CE)SAT measurements performed temperatures other then room temperature measured using temperature chambers artificially heat cool device. Since on-time pulse width short, power loss extremely small. Hence, junction case temperatures approximately equal.
ICE, COLLECTOR EMITTER CURRENT DUTY CYCLE 0.5%, PULSE DURATION 250µs VCE, COLLECTOR EMITTER VOLTAGE 25oC
150oC 125oC
FIGURE
Application Note 9859
1000 EON2 TURN-ON ENERGY LOSS (µJ) 25oC, 12V, 125oC, 12V, EOFF, TURN-OFF ENERGY LOSS (µJ) 500µH, 390V 25oC, 125oC,
500µH, 390V
COLLECTOR EMITTER CURRENT
COLLECTOR EMITTER CURRENT
FIGURE
FIGURE
Figures typical turn-on turn-off energy curves. test circuit measurement techniques were previously discussed. curves represent energy losses typical part various collector current levels several test conditions. turn-on switching energy curves (Figure include effects recovery. curves show effect gate voltage temperature turn-on losses. gate voltage rises constant), turn-on losses will decrease, junction temperature increased, turn-on losses will increase. IGBT turn-on influenced gate drive power circuit. rate which gate charged determining factor turn-on speed. Generally, gate charged faster, device will turn-on faster. device will eventually reach point where gate charged faster parasitic impedances. most important impedance common emitter inductance. turn-on di/dt increased, induced voltage common emitter inductance opposes gate drive voltage. effect lower gate current being supplied charge input capacitance device. very fast turn-on, voltage build common emitter inductance actually begin buck gate voltage. This effect shown Figure current will begin rise high di/dt. gate bucked, current di/dt will begin lower. result curved collector current turn-on wave form.
turn-off switching curves also show effect gate voltage temperature losses. Figure shows, gate voltage practically influence turn-off losses, junction temperature large effect. rated current (12A), there times increase turn-off losses from 25oC 125oC. following four curves (Figures typical turn-on turn-off delays collector current rise fall times. definition each measurement shown Figure measurements taken using circuit Figure times intended used guidelines estimating delay fall rise times. Since circuit layouts vary, stray impedances also vary stray impedances will have effects these measurements. test circuit layout that minimizes stray impedances, recommended that circuit designers follow same procedure.
td(ON)I, TURN-ON DELAY TIME (ns) 500µH, 390V 25oC, 125oC, 25oC, 125oC,
FAST TURN-ON WITH COMMON EMITTER INDUCTANCE EFFECTS
COLLECTOR EMITTER CURRENT
FIGURE
FIGURE TURN-ON SWITCHING WAVEFORMS WITH COMMON EMITTER INDUCTANCE EFFECTS
Application Note 9859
RISE TIME (ns) ICE, COLLECTOR EMITTER CURRENT 25oC 125oC, COLLECTOR EMITTER CURRENT DUTY CYCLE 0.5%, PULSE DURATION 250µs 25oC -55oC 125oC 500µH, 390V 125oC, 25oC,
current fall time IGBT dependent many parameters. Clamp voltage, collector current, gate impedance, junction temperature have most influence. Since impossible show device behaves under these conditions, stated conditions were chosen show trends that occur collector current, gate voltage, junction temperature varied. Intersil also provided designer with simulation models that accurately predict device behavior under dynamic conditions[2].
FIGURE NOTE: Turn-on rise time effected common emitter inductance. test circuit attempts only include part package inductance. gate drive connected very close device leads minimize circuit common emitter inductance.
td(OFF)I TURN-OFF DELAY TIME (ns) 500µH, 390V 12V, 15V, 125oC
VGE, GATE EMITTER VOLTAGE
FIGURE
12V, 15V, 25oC
COLLECTOR EMITTER CURRENT
FIGURE
FALL TIME (ns)
Figure shows Typical Transfer Characteristics curves. curves inform designer about maximum amount current typical device conduct given gate voltage. device approaches maximum current, conduction drop will begin rise rapidly, since device will begin exit saturation region enter linear region. Also, gate voltage increased beyond approximately 15V, rate increase collector current slowing. maximum current device will conduct determined device's transconductance emitter resistance package. high currents, emitter resistance will develop debiasing voltage that will limit die's gate emitter voltage.
500µH, 390V
125oC,
25oC,
COLLECTOR EMITTER CURRENT
FIGURE
Application Note 9859
VGE, GATE EMITTER VOLTAGE GATE CHARGE (nC) 200V 600V IG(REF) 1mA, 25oC ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
500µH, ETOTAL EON2 +EOFF
390V,
400V
FIGURE
CASE TEMPERATURE (oC)
FIGURE
typical Gate Charge curve, Figure intended inform designer amount charge needed sufficiently charge gate input capacitance. test circuit shown below Figure
Figure Typical Total Switching Loss versus Case Temperature curve Typical Total Switching Loss versus Gate Resistance curve circuit Figure important note here again that since switching test performed with device energy losses, case junction temperature approximately equal. Since IGBT diode switching losses positively correlated temperature, total switching losses increase temperature increased (Figure 23).
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 125oC, 500µH, 390V, ETOTAL EON2 +EOFF
FIGURE GATE CHARGE SWITCHING TEST CIRCUIT
gate input capacitance (CIES) charged using constant current (e.g., 1mA) while device switches into resistive load. gate clamped desired voltage level. load resistor (RL) selected achieve switching device rated collector current one-half rated breakdown voltage. collector current increased, gate plateau voltage level will increase, voltage increased, plateau time will increase. Either condition will increase gate charge.
GATE RESISTANCE
1000
FIGURE
Gate resistance selection extremely important design choice high frequency IGBT switching realized. This curve (Figure relates circuit designer that range gate resistances (e.g. HGTG12N60A4), total switching energy rises only moderately (For 12A, 0.53mJ 0.6mJ 20). gate resistance increased switching times longer, switching losses IGBTs being switched ever faster lower losses, current voltage transients also being increased. High speed comes cost possible issues. Gate resistance offers opportunity
Application Note 9859
trade some increases switching loss lower collector current voltage transients.
FREQUENCY 1MHz CAPACITANCE (nF) FORWARD CURRENT CIES COES CRES
increased large values (e.g., 16V). device rated current (12A), increase VCE(SAT) only 0.1V increased from 15V, which implies that using large gate voltages reduce VCE(SAT) effective.
FORWARD VOLTAGE DUTY CYCLE 0.5%, PULSE DURATION 250µs 125oC 25oC
VCE, COLLECTOR EMITTER VOLTAGE
FIGURE
Figure shows typical device capacitance curves function collector-emitter voltage. Figure schematic device capacitances with capacitance definitions. capacitances measured 1MHz using 4285A meter.
FIGURE
diode forward current curve, Figure shows forward voltage drop across co-packed diode 25oC 125oC junction temperatures where forward drop exhibits negative temperature coefficient recommended current operating range.
trr, RECOVERY TIMES (ns) dIEC/dt 200A/µs 125oC
CRES CCOES CCIES
125oC 125oC 25oC 25oC 25oC
FIGURE
VCE, COLLECTOR EMITTER VOLTAGE DUTY CYCLE 0.5%, PULSE DURATION 250µs, 25oC
FORWARD CURRENT
FIGURE
VGE, GATE EMITTER VOLTAGE
Figure shows recovery times 200A/µs forward current increased. Since di/dt varies every circuit design, 200A/µs chosen guideline describe increase forward current increased. increase increasing forward current FWD's increased minority charge higher current levels.
FIGURE
Figure typical Collector Emitter On-State Voltage versus Gate Emitter Voltage curve. gate emitter voltage increased, VCE(SAT) decreases. change gate voltage minimal effects VCE(SAT)
Application Note 9859
trr, RECOVERY TIMES (ns) 25oC 25oC 1000 IRRM 125oC 12A, 390V 125oC
shown below. calculated IRRM will error same assumptions made above, error will less significant.
FIGURE
IRRM also approximated using diEC/dt from Figure
diEC/dt, RATE CHANGE CURRENT (A/µs)
FIGURE
REVERSE RECOVERY CHARGE (nC)
Figure shows recovery times decreasing di/dt increased. curve also shows that strong function diEC/dt where di/dt during (di/dtb) become very fast diEC/dt increased. time measured according definitions Figure
0.25 IRRM IRRM
390V
125oC
125oC
25oC
dIEC
25oC 1000
FIGURE
Since measured from IRRM 0.25 IRRM then extrapolated zero, peak di/dt during should assumed equal:
diEC/dt, RATE CHANGE CURRENT (A/µs)
FIGURE
NORMALIZED THERMAL RESPONSE
with measurements, test circuit also influences measurements. high diF/dt, hence high di/dtb, current oscillate through zero current level (Figure 32), peak di/dtb approximated above equation. However, lower diF/dt, di/dtb cause current oscillate through zero, which will lead inaccurate approximation peak di/dtb.
Figure shows stored charge increases with current temperature diEC/dt. values given rated current times rated current. other currents calculated using linear approximation with given values.
10-1 0.05 0.02 0.01 10-2 SINGLE PULSE 10-4 10-3 10-2 10-1 DUTY FACTOR, PEAK RJC)
0.25 IRRM
FIGURE
RECTANGULAR PULSE DURATION
Although di/dtb should assumed noted above, IRRM approximated using stored charge (Figure assuming triangular waveform
FIGURE
Application Note 9859
final curve, Figure Transient Thermal Impedance curve. curve represents package maximum thermal impedance various pulse widths duty cycles. thermal impedance number calculated using maximum peak junction temperature 150oC. normalized number from graph multiplied rated thermal resistance number give actual thermal impedance number. Intersil also supplies designer with equivalent electrical network representing part's thermal network intended simulation environments.
References
Bhalla, Gladish, Dolny, Effect IGBT Switching Dynamics Loss Calculations High Speed Applications, IEEE Electron Device Letters, Vol. January 1999, pp.51-53. Craig, Hones, Bober, SMPS-IGBT Described Saber Model, PCIM Conference Nuremberg/Germany June 22,1999
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