BPV11 very high sensitive silicon epitaxial planar phototransistor sta
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BPV11
BPV11 very high sensitive silicon epitaxial planar phototransistor standard plastic package. waterclear epoxy lens device sensitive visible near infrared radiation. viewing angle ±15° makes insensible ambient straylight. base terminal available enable biasing sensitivity control.
Features
Very high photo sensitivity Standard package with clear lens Angle half sensitivity Base terminal available
12785
Applications
Detector industrial electronic circuitry, measurement control
Absolute Maximum Ratings
Tamb 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCBO VCEO VEBO Ptot Tstg RthJA Value -55.+100 Unit
tp/T 0.5, Tamb
from body
TELEFUNKEN Semiconductors Rev. 16-Oct-96
BPV11
Basic Characteristics
Tamb 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Current Gain Collector Emitter Capacitance Collector Base Capacitance Collector Light Current Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Test Conditions MHz, MHz, Ee=1mW/cm2, l=950nm, VCE=5V Symbol V(BR)CEO ICEO CCEO CCBO Unit
620.980
Ee=1mW/cm2, l=950nm, IC=1mA VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W VS=5V, IC=5mA, RL=100W
l0.5
VCEsat toff
Typical Characteristics (Tamb 25_C unless otherwise specified)
Total Power Dissipation Collector Dark Current
RthJA
8249
8300
Tamb Ambient Temperature
Tamb Ambient Temperature
Figure Total Power Dissipation Ambient Temperature
Figure Collector Dark Current Ambient Temperature
TELEFUNKEN Semiconductors Rev. 16-Oct-96
BPV11
Relative Collector Current Amplification
8239
VCE=5V
VCE=5V Ee=1mW/cm2 l=950nm
8250
0.01
Tamb Ambient Temperature
Collector Current
Figure Relative Collector Current Ambient Temperature
CCBO Collector Base Capacitance Collector Light Current
Figure Amplification Collector Current
f=1MHz
VCE=5V l=950nm
0.01 0.01
8244
Irradiance
8246
Collector Base Voltage
Figure Collector Light Current Irradiance
Figure Collector Base Capacitance Collector Base Voltage
Collector Emitter Capacitance f=1MHz
Collector Light Current
l=950nm
mW/cm2
mW/cm2 mW/cm2 mW/cm2
0.05 mW/cm2 0.02 mW/cm2
Collector Emitter Voltage
8272
8247
Collector Emitter Voltage
Figure Collector Light Current Collector Emitter Voltage
Figure Collector Emitter Capacitance Collector Emitter Voltage
TELEFUNKEN Semiconductors Rev. 16-Oct-96
BPV11
Turn Turn Time Relative Sensitivity
8253
VCE=5V RL=100W l=950nm
toff
8248
Collector Current
Figure Turn On/Turn Time Collector Current
Figure Relative Radiant Sensitivity Angular Displacement
Relative Spectral Sensitivity
8348
Wavelength
1000
Figure Relative Spectral Sensitivity Wavelength
TELEFUNKEN Semiconductors Rev. 16-Oct-96
BPV11
Dimensions
9612200
TELEFUNKEN Semiconductors Rev. 16-Oct-96
BPV11
Ozone Depleting Substances Policy Statement
policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
TELEFUNKEN Semiconductors Rev. 16-Oct-96
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