Input- mixer stages UHF- VHF-tuner Features Integrated gate
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BF998RW
Input- mixer stages UHF- VHF-tuner
Features
Integrated gate protection diodes noise figure feedback capacitance High cross modulation performance input capacitance
High AGC-range High gain Available with reverse configuration
request
BF998RW Marking: Plastic case (SOT 343R) Source; Drain; Gate Gate
Absolute Maximum Ratings
Parameters Drain source voltage Drain current Gate 1/gate 2-source peak current Gate 1/gate 2-source voltage Total power dissipation Tamb Channel temperature Storage temperature range Symbol ±IG1/G2SM ±VG1S/G2S Ptot Tstg Value +150 Unit
Maximum Thermal Resistance
Parameters Channel ambient glass fibre printed board plated with Symbol RthChA Value Unit
TELEFUNKEN Semiconductors Rev. 07-Nov-97
BF998RW
Electrical Characteristics
Tamb Parameters Test Conditions Drain-source breakdown voltage mA,-VG1S -VG2S Gate 1-source breakdown voltage ±IG1S VG2S Gate 2-source breakdown voltage ±IG2S VG1S Gate 1-source leakage current ±VG1S VG2S Gate 2-source leakage current ±VG2S VG1S Drain current VG1S VG2S Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS BF998RW BF998RAW BF998RBW IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) 10.5 Unit
Gate 1-source cut-off voltage VG2S Gate 2-source cut-off voltage VG1S
Electrical Characteristics
VG2S MHz, Tamb Parameters Test Conditions Forward transadmittance Gate input capacitance Gate input capacitance VG1S VG2S Feedback capacitance Output capacitance Power gain range VG2S Noise figure Type Symbol y21s Cissg1 Cissg2 Crss Coss 1.05 Unit
16.5
TELEFUNKEN Semiconductors Rev. 07-Nov-97
BF998RW
Common Source S-Parameters VG2S
VDS/V ID/mA f/MHz -0.03 -0.15 -0.34 -0.57 -0.83 -1.10 -1.35 -1.62 -1.84 -2.09 -2.33 -2.52 -2.72 -0.04 -0.15 -0.38 -0.62 -0.91 -1.19 -1.45 -1.74 -2.01 -2.27 -2.52 -2.73 -2.94 -0.04 -0.16 -0.39 -0.64 -0.93 -1.22 -1.50 -1.80 -2.06 -2.32 -2.59 -2.78 -3.00 -7.2 -14.1 -20.9 -27.4 -33.6 -39.3 -45.0 -50.1 -55.6 -60.6 -65.4 -70.2 -74.9 -7.6 -14.8 -21.9 -28.6 -35.0 -41.0 -46.6 -52.0 -57.5 -62.5 -67.2 -72.0 -76.6 -7.6 -14.9 -22.1 -28.9 -35.3 -41.5 -47.1 -52.6 -58.0 -62.9 -67.7 -72.4 -77.0 5.71 5.51 5.20 4.84 4.39 3.98 3.57 3.16 2.80 2.43 2.11 1.79 1.52 7.92 7.72 7.42 7.02 6.60 6.15 5.73 5.32 4.95 4.58 4.23 3.92 3.62 8.75 8.54 8.24 7.83 7.40 6.94 6.52 6.12 5.73 5.35 5.00 4.68 4.38 168.8 157.3 145.9 135.5 125.3 116.0 107.2 98.9 90.6 83.0 75.3 67.5 60.4 168.9 157.6 146.7 136.4 126.5 117.4 108.9 100.8 92.8 85.4 78.1 70.6 63.9 169.1 157.8 147.0 136.7 126.8 117.9 109.3 101.5 93.6 86.4 79.0 71.7 65.2 -55.94 -50.26 -47.29 -45.68 -44.98 -44.62 -45.51 -45.88 -46.46 -47.88 -49.66 -49.70 -47.29 -55.74 -49.95 -47.09 -45.38 -44.69 -44.43 -45.21 -45.48 -46.06 -47.18 -48.75 -48.80 -46.98 -55.44 -49.75 -46.89 -45.18 -44.49 -44.23 -44.91 -45.08 -45.56 -46.48 -47.85 -48.20 -46.78 83.6 76.8 70.6 65.5 60.1 58.6 56.2 58.4 64.0 70.0 89.8 116.0 145.4 83.2 76.8 70.5 65.4 60.1 58.8 57.0 59.5 65.2 71.5 89.0 111.9 139.8 83.4 76.8 70.5 65.5 60.3 59.4 57.6 60.2 65.8 71.4 87.0 107.0 133.8 -0.08 -0.13 -0.21 -0.28 -0.37 -0.47 -0.55 -0.65 -0.72 -0.77 -0.82 -0.89 -0.89 -0.10 -0.16 -0.24 -0.33 -0.43 -0.53 -0.61 -0.72 -0.79 -0.85 -0.90 -0.96 -0.97 -0.13 -0.19 -0.28 -0.35 -0.46 -0.57 -0.66 -0.76 -0.84 -0.90 -0.95 -1.00 -1.01 -3.6 -7.0 -10.4 -13.5 -16.7 -19.5 -22.5 -25.1 -28.2 -30.9 -33.7 -36.7 -39.6 -3.6 -7.1 -10.5 -13.8 -17.1 -19.8 -22.6 -25.4 -28.4 -31.1 -33.8 -36.9 -39.7 -3.7 -7.2 -10.6 -13.9 -17.2 -20.0 -22.8 -25.7 -28.6 -31.3 -34.0 -36.9 -39.9
1000 1100 1200 1300 1000 1100 1200 1300 1000 1100 1200 1300
TELEFUNKEN Semiconductors Rev. 07-Nov-97
BF998RW
Typical Characteristics 25_C unless otherwise specified)
Total Power Dissipation Drain Current VG1S=
12159
VDS=
12817
-0.6
-0.2
Tamb Ambient Temperature
VG2S Gate Source Voltage
Figure Total Power Dissipation Ambient Temperature
Drain Current -0.4V
12812
Figure Drain Current Gate Source Voltage
VG2S=
VG1S= 0.6V
issg1 Gate Input Capacitance
VDS=8V VG2S=4V f=1MHz
0.4V 0.2V
-0.2V
12863
-1.5 -1.0 -0.5
Drain Source Voltage
VG1S Gate Source Voltage
Figure Drain Current Drain Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
Output Capacitance
VDS= Drain Current -0.8
12816
VG2S=4V f=1MHz
VG2S=-1V -0.4
12864
VG1S Gate Source Voltage
Drain Source Voltage
Figure Drain Current Gate Source Voltage
Figure Output Capacitance Drain Source Voltage
TELEFUNKEN Semiconductors Rev. 07-Nov-97
BF998RW
800MHz Transducer Gain -0.2V -0.4V
12818
1300MHz
12821
VDS=8V VG2S=4V f=100.1300MHz ID=5mA 10mA 20mA
f=100MHz
400MHz 700MHz 1000MHz
VG2S=-0.8V
-0.5
VG1S Gate Source Voltage
(y21)
Figure Transducer Gain Gate Source Voltage
12819
Figure Short Circuit Forward Transfer Admittance
y21s Forward Transadmittance
VDS=8V f=1MHz
VG2S=4V
f=1300MHz
1000MHz 700MHz 400MHz 100MHz 0.25 0.50 0.75 VDS=15V VG2S=4V ID=10mA f=100.1300MHz 1.00 1.25 1.50
12822
Drain Current
(y22)
Figure Forward Transadmittance Drain Current
12820
Figure Short Circuit Output Admittance
f=1300MHz
1000MHz 700MHz VDS=8V VG2S=4V ID=10mA f=100.1300MHz
400MHz 100MHz
(y11)
Figure Short Circuit Input Admittance
TELEFUNKEN Semiconductors Rev. 07-Nov-97
BF998RW
mA;VG2S
120° j0.5 150° j0.2 1300MHz 1200 180° 0.08 0.16
-j0.2
120° 150° 1300MHz 180° 1000
-j0.2 -150° -30°
-120°
-60° -90°
Figure Forward transmission coefficient
1300MHz 1000 -j0.5
-150°
-30°
-120°
-60° -90°
Figure Input reflection coefficient
Figure Reverse transmission coefficient
j0.5
j0.2
1300MHz -j0.5
Figure Output reflection coefficient
TELEFUNKEN Semiconductors Rev. 07-Nov-97
BF998RW
Dimensions
12238
TELEFUNKEN Semiconductors Rev. 07-Nov-97
BF998RW
Ozone Depleting Substances Policy Statement
policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
TELEFUNKEN Semiconductors Rev. 07-Nov-97
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