Input mixer stages tuner. Features Integrated gate protectio
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BF996S
Input mixer stages tuner.
Features
Integrated gate protection diodes noise figure feedback capacitance High cross modulation performance input capacitance High AGC-range
9279
12623
BF996S Marking: Plastic case (SOT 143) Source; Drain; Gate Gate
Absolute Maximum Ratings
Parameters Drain source voltage Drain current Gate 1/gate 2-source peak current Total power dissipation Channel temperature Storage temperature range Tamb 60°C Symbol ±IG1/G2SM Ptot Tstg Value +150 Unit
Maximum Thermal Resistance
Parameters Channel ambient glass fibre printed board 1.5) plated with Symbol RthChA Value Unit
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF996S
Electrical Characteristics
Tamb 25°C Parameters Test Conditions Drain-source breakdown voltage -VG1S -VG2S Gate 1-source breakdown voltage ±IG1S VG2S Gate 2-source breakdown voltage ±IG2S VG1S Gate 1-source leakage current ±VG1S VG2S Gate 2-source leakage current ±VG2S VG1S Drain current VG1S VG2S Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Min. 10.5 Typ. Max. Unit
Gate 1-source cut-off voltage VG2S Gate 2-source cut-off voltage VG1S
Electrical Characteristics
VG2S MHz, Tamb 25°C Parameters Test Conditions Forward transadmittance Gate input capacitance Gate input capacitance VG1S VG2S Feedback capacitance Output capacitance Power gain range VG2S Noise figure Type Symbol y21s Cissg1 Cissg2 Crss Coss Min. Typ. 18.5 10.8 Max. Unit
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF996S
Common Source S-Parameters VG2S
VDS/V ID/mA f/MHz 1000 1100 1200 1300 1000 1100 1200 1300 1000 1100 1200 1300 0.99 0.98 0.95 0.92 0.89 0.86 0.83 0.80 0.78 0.75 0.72 0.70 0.68 0.99 0.98 0.95 0.92 0.88 0.85 0.82 0.79 0.76 0.73 0.71 0.68 0.66 0.99 0.98 0.94 0.91 0.87 0.84 0.81 0.78 0.75 0.72 0.69 0.67 0.65 -8.5 -17.7 -24.6 -32.1 -39.2 -45.8 -52.3 -58.7 -64.7 -70.7 -76.6 -82.5 -88.6 -9.0 -18.7 -26.0 -33.7 -41.2 -48.3 -55.1 -61.6 -67.9 -74.2 -80.2 -86.4 -92.3 -9.4 -19.4 -27.1 -35.0 -42.9 -50.3 -57.2 -63.9 -70.4 -76.8 -82.9 -89.0 -95.1 1.45 1.52 1.33 1.26 1.18 1.11 1.05 0.99 0.93 0.88 0.84 0.80 0.76 1.82 1.90 1.67 1.58 1.48 1.39 1.32 1.24 1.17 1.11 1.06 1.01 0.97 2.01 2.10 1.84 1.74 1.63 1.53 1.45 1.37 1.29 1.22 1.17 1.12 1.07 164.9 150.9 134.7 121.3 108.4 96.5 85.0 74.1 63.6 53.1 43.7 33.6 24.1 165.3 151.8 136.3 123.3 110.9 99.5 88.7 78.1 67.9 57.9 48.7 38.9 29.6 165.4 152.0 136.7 123.8 111.5 100.3 89.6 79.4 69.2 59.4 50.2 40.8 31.5 0.001 0.003 0.004 0.004 0.005 0.005 0.004 0.004 0.004 0.004 0.004 0.004 0.006 0.002 0.003 0.004 0.005 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.004 0.006 0.002 0.003 0.004 0.005 0.005 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.006 82.2 75.6 67.7 62.8 57.8 57.3 58.9 63.3 73.1 83.5 102.1 120.4 131.7 81.9 75.0 67.2 61.8 56.3 55.8 56.7 60.7 69.9 80.0 98.9 118.2 130.5 81.4 74.6 66.4 60.8 55.1 54.4 54.9 58.5 67.3 76.7 95.2 115.3 128.7 0.99 0.98 0.97 0.95 0.93 0.92 0.90 0.88 0.86 0.85 0.83 0.82 0.80 0.99 0.98 0.96 0.95 0.93 0.91 0.90 0.88 0.86 0.84 0.83 0.81 0.80 0.98 0.97 0.96 0.94 0.92 0.91 0.89 0.87 0.86 0.84 0.83 0.81 0.79 -3.4 -7.1 -9.7 -12.3 -15.1 -17.4 -19.7 -22.0 -24.3 -26.2 -28.4 -30.5 -32.7 -3.5 -7.2 -9.8 -12.6 -15.3 -17.8 -20.0 -22.4 -24.6 -26.6 -28.8 -31.0 -33.3 -3.6 -7.3 -10.0 -12.9 -15.7 -18.0 -20.4 -22.7 -25.0 -27.1 -29.4 -31.6 -33.9
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF996S
Typical Characteristics 25_C unless otherwise specified)
Total Power Dissipation Drain Current
12159
12852
VDS=
VG1S= -0.5
Tamb Ambient Temperature
VG2S Gate Source Voltage
Figure Total Power Dissipation Ambient Temperature
Drain Current VG1S=
12849
Figure Drain Current Gate Source Voltage
VG2S= Ptot=200mW
issg1 Gate Input Capacitance
1.5V 0.5V
VDS=15V VG2S=4V f=1MHz
-0.5V
12853
-0.5
Drain Source Voltage
Drain Current
Figure Drain Current Drain Source Voltage
Drain Current
12851
Figure Gate Input Capacitance Drain Current
issg2 Gate Input Capacitance
VDS=
VDS=15V VG1S=0 f=1MHz
0.5V VG2S= -0.5
VG1S Gate Source Voltage
12854
VG2S Gate Source Voltage
Figure Drain Current Gate Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF996S
Output Capacitance
12856
VG2S=4V f=1MHz
12857
f=1300MHz 1100MHz 900MHz 700MHz 500MHz 300MHz 100MHz VDS=15V VG2S=4V ID=10mA f=100.1300MHz
Drain Source Voltage
(y11)
Figure Output Capacitance Drain Source Voltage
Transducer Gain -2.0 -1.5 -1.0 -0.5
12855
Figure Short Circuit Input Admittance
15mA 1300MHz
12858
200MHz
VDS=15V VG2S=4V f=100.1300MHz
f=100MHz 300MHz 500MHz
-0.2V -0.4V -0.6V -0.8V VG2S=-1V
ID=5mA 10mA 700MHz 900MHz 1100MHz
VG1S Gate Source Voltage
(y21)
Figure Transducer Gain Gate Source Voltage
12850
Figure Short Circuit Forward Transfer Admittance
VDS=15V VG2S=4V ID=10mA f=100.1300MHz f=1300MHz
y21s Forward Transadmittance
VDS=15V f=1MHz
1100MHz 900MHz 700MHz
100MHz 500MHz 300MHz
VG2S=0
0.5V
12859
Drain Current
(y22)
Figure Forward Transadmittance Drain Current
Figure Short Circuit Output Admittance
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF996S
mA;VG2S
120° j0.5 150° j0.2 1300MHz
180° 0.08 0.16
-j0.2
120°
150°
180°
-j0.2 -150° -30°
-120°
-60° -90°
Figure Forward transmission coefficient
1300MHz -j0.5
-150°
-30°
-120°
-60° -90°
Figure Input reflection coefficient
Figure Reverse transmission coefficient
j0.5 j0.2 1300MHz
1300MHz
-j0.5
Figure Output reflection coefficient
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF996S
Dimensions
12240
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF996S
Ozone Depleting Substances Policy Statement
policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
TELEFUNKEN Semiconductors Rev. 03-Mar-97
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