N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Input

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Input

Datasheet Thumbnail

Top Searches for this datasheet

BF995
N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Input mixer stages especially TV-tuners MHz.
Features
Integrated gate protection diodes High cross modulation performance noise figure High AGC-range feedback capacitance
9279
12623
BF995 Marking: Plastic case (SOT 143) Source; Drain; Gate Gate
Absolute Maximum Ratings
Parameters Drain source voltage Drain current Gate 1/gate 2-source peak current Total power dissipation Channel temperature Storage temperature range Tamb Symbol Value +150 Unit
60°C
±IG1/2SM Ptot Tstg
Maximum Thermal Resistance
Parameters Channel ambient glass fibre printed board 1.5) plated with Symbol RthChA Value Unit
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF995
Electrical Characteristics
Tamb 25_C, unless otherwise specified Parameters Test Conditions Drain-source breakdown voltage -VG1S -VG2S Gate 1-source breakdown voltage ±IG1S VG2S Gate 2-source breakdown voltage ±IG2S VG1S Gate 1-source leakage current ±VG1S VG2S Gate 2-source leakage current ±VG2S VG1S Drain current VG1S VG2S Gate 1-source cut-off voltage VG2S Gate 2-source cut-off voltage VG1S Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Min. 10.5 Typ. Max. Unit
Electrical Characteristics
VG2S MHz, Tamb 25°C, unless otherwise specified Parameters Test Conditions Forward transadmittance Gate 1-input capacitance Gate 2-input capacitance VG1S VG2S Feedback capacitance Output capacitance Power gain mS,f range VG2S Noise figure Type Symbol y21s Cissg1 Cissg2 Crss Coss Min. Typ. Max. Unit
nGps
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF995
Typical Characteristics 25_C unless otherwise specified)
Total Power Dissipation y21s Forward Transadmittance
12159
VDS=15V f=1MHz VG2S=5V
12162
Tamb Ambient Temperature
VG1S Gate Source Voltage
Figure Total Power Dissipation Ambient Temperature
Figure Forward Transadmittance Gate Source Voltage
issg1 Gate Input Capacitance
VG1S= 0.6V Drain Current
12160
VG1S Gate Source Voltage VDS=15V VG2S=4V f=1MHz
0.4V 0.2V -0.2V -0.4V -0.6V -0.8V
Drain Source Voltage
12163
Figure Drain Current Drain Source Voltage
12161
Figure Gate Input Capacitance Gate Source Voltage
y21s Forward Transadmittance
VDS=15V IDS=10mA
issg2 Gate Input Capacitance
VG1S=0.5V
VDS=15V VG1S=0 f=1MHz
-0.5V
12164
VG2S Gate Source Voltage
VG2S Gate Source Voltage
Figure Forward Transadmittance Gate Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF995
Output Capacitance
12165
VG2S=4V f=1MHz 700MHz
12167
VDS=15V VG2S=4V f=50.700MHz ID=5mA 10mA 20mA
f=50MHz 100MHz 200MHz 300MHz 400MHz 500MHz
600MHz
(y21)
Drain Source Voltage
Figure Output Capacitance Drain Source Voltage
12166
Figure Short Circuit Forward Transfer Admittance
f=700MHz 600MHz 500MHz
f=700MHz 600MHz
ID=5mA
500MHz 400MHz 300MHz 200MHz 100MHz VDS=15V VG2S=4V ID=5.20mA f=50.700MHz
400MHz 300MHz 200MHz 100MHz
ID=20mA VDS=15V VG2S=4V ID=5.20mA f=50.700MHz
(y11)
12168
(y22)
Figure Short Circuit Input Admittance
Figure Short Circuit Output Admittance
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF995
mA;VG2S
120° j0.5 150° j0.2
180° 700MHz 0.04 0.08
-j0.2
120°
180°
-150°
20mA 10mA -30° -30°
-j0.2
-120°
-60° -90°
Figure Forward transmission coefficient
TELEFUNKEN Semiconductors Rev. 03-Mar-97
-j0.5
-150° -30°
-120°
-60° -90°
Figure Input reflection coefficient
Figure Reverse transmission coefficient
j0.5 j0.2 700MHz
-j0.5
Figure Output reflection coefficient
BF995
Dimensions
12240
TELEFUNKEN Semiconductors Rev. 03-Mar-97
BF995
Ozone Depleting Substances Policy Statement
policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
TELEFUNKEN Semiconductors Rev. 03-Mar-97

N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Input

Top Searches for this datasheet

Other recent searches