Silicon Transistor UHF/VHF uncontrolled prestages with noise modu

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon Transistor UHF/VHF uncontrolled prestages with noise modu

Datasheet Thumbnail

Top Searches for this datasheet

BF979
Silicon Transistor
UHF/VHF uncontrolled prestages with noise modulation
Features
High cross modulation performance High power gain noise High reverse attenuation
9308
13623
BF979 Marking: BF979 Plastic case Collector; Base; Emitter
Absolute Maximum Ratings
Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb Junction temperature Storage temperature range Symbol -VCBO -VCEO -VEBO Ptot Tstg Value +150 Unit
Maximum Thermal Resistance
Parameters Junction ambient glass fibre printed board 1.5) plated with Symbol RthJA Value Unit
TELEFUNKEN Semiconductors Rev. 31-Oct-97
BF979
Electrical Characteristics
Tamb unless otherwise specified Parameters Test Conditions Collector-emitter cut-off current -VCE Collector-base cut-off current -VCB Emitter-base cut-off current -VEB Collector-emitter breakdown voltage forward current transfer ratio -VCE Symbol -ICES
-ICBO -IEBO -V(BR)CEO
Min.
Typ.
Max.
Unit
Electrical Characteristics
Tamb Parameters Test Conditions Transition frequency -VCE -VCE Collector-base capacitance -VCB Noise figure -VCE Power gain -VCE MHz, Collector current Gpbmax -VCE MHz, Symbol Min. Typ. 1750 1300 Max. Unit
TELEFUNKEN Semiconductors Rev. 31-Oct-97
BF979
Typical Characteristics 25_C unless otherwise specified)
Collector Base Capacitance
12845
Total Power Dissipation
-VCB Collector Base Voltage
Tamb Ambient Temperature
12876
Figure Total Power Dissipation Ambient Temperature
Figure Collector Base Capacitance Collector Base Voltage
2100 Transition Frequency 1800 1500 1200
12848
-VCB=10V f=300MHz
Collector Current
Figure Transition Frequency Collector Current
TELEFUNKEN Semiconductors Rev. 31-Oct-97
BF979
Dimensions
12243
TELEFUNKEN Semiconductors Rev. 31-Oct-97
BF979
Ozone Depleting Substances Policy Statement
policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
TELEFUNKEN Semiconductors Rev. 31-Oct-97

Silicon Transistor UHF/VHF uncontrolled prestages with noise modu

Top Searches for this datasheet

Other recent searches