Input- mixerstages especially UHF-tuners. Features Integrate

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Input- mixerstages especially UHF-tuners. Features Integrate

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BF966S
Input- mixerstages especially UHF-tuners.
Features
Integrated gate protection diodes High cross modulation performance noise figure High AGC-range feedback capacitance input capacitance
9307 12647
BF966S Marking: BF966S Plastic case Drain; Source; Gate Gate
12623
Absolute Maximum Ratings
Parameters Drain source voltage Drain current Gate 1/Gate 2-source peak current Total power dissipation Channel temperature Storage temperature range Tamb Symbol Value +150 Unit
60°C
±IG1/2SM Ptot Tstg
Maximum Thermal Resistance
Parameters Channel ambient glass fibre printed board 1.5) plated with Symbol RthChA Maximum Unit
TELEFUNKEN Semiconductors Rev. 23-Jan-97
BF966S
Electrical Characteristics
Tamb 25°C, unless otherwise specified Parameters Test Conditions Drain-source breakdown voltage -VG1S -VG2S Gate 1-source breakdown voltage ±IG1S VG2S Gate 2-source breakdown voltage ±IG2S VG1S Gate 1-source leakage current ±VG1S VG2S Gate 2-source leakage current ±VG2S VG1S Drain current VG1S VG2S Gate 1-source cut-off voltage VG2S Gate 2-source cut-off voltage VG1S Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Min. 10.5 Typ. Max. Unit
BF966S BF966SA BF966SB
Electrical Characteristics
VG2S MHz, Tamb 25°C, unless otherwise specified Parameters Test Conditions Forward transadmittance Gate 1-input capacitance Gate 2-input capacitance VG1S VG2S Feedback capacitance Output capacitance Power gain range VG2S Noise figure Symbol y21s Cissg1 Cissg2 Crss Coss Min. Typ. 18.5 Max. Unit
nGps
TELEFUNKEN Semiconductors Rev. 23-Jan-97
BF966S
Typical Characteristics 25_C unless otherwise specified)
Total Power Dissipation Drain Current
12159
12764
VDS=
VG1S=
Tamb Ambient Temperature
VG2S Gate Source Voltage
Figure Total Power Dissipation Ambient Temperature
Drain Current
12762
Figure Drain Current Gate Source Voltage
1.5V
issg1 Gate Input Capacitance
VG1S=
VG2S= 0.5V
VDS=15V VG2S=4V f=1MHz
-0.5V
Drain Source Voltage
12765
Drain Current
Figure Drain Current Drain Source Voltage
Figure Gate Input Capacitance Drain Current
2.00 Output Capacitance
Drain Current
12763
VDS=
VG2S=
1.75 1.50 1.25 1.00 0.75 0.50 0.25
VG2S=4V ID=10mA f=1MHz
12766
VG1S Gate Source Voltage
Drain Source Voltage
Figure Drain Current Gate Source Voltage
Figure Output Capacitance Drain Source Voltage
TELEFUNKEN Semiconductors Rev. 23-Jan-97
BF966S
issg2 Gate Input Capacitance
12767
VDS=15V VG1S=0 f=1MHz
12770
f=1300MHz ID=5mA ID=10mA 1000MHz 700MHz 400MHz VDS=15V VG2S=4V f=100.1300MHz ID=20mA
100MHz
VG2S Gate Source Voltage
(y11)
Figure Gate Input Capacitance Gate Source Voltage
Transducer Gain
12768
Figure Short Circuit Input Admittance
f=1300MHz ID=5mA 10mA 20mA 1000MHz 700MHz VDS=15V VG2S=4V f=100.1300MHz
200MHz
-0.5V
VG2S=-2.-3V
12772
-0.1 (y12)
VG1S Gate Source Voltage
Figure Transducer Gain Gate Source Voltage
12769
Figure Short Circuit Reverse Transfer Admittance
y21s Forward Transadmittance
VDS=15V f=1MHz
VG2S=4V
VDS=15V VG2S=4V f=100.1300MHz ID=5mA 10mA 20mA
f=100MHz
400MHz 700MHz 1000MHz
0.5V
12771
1300MHz
Drain Current
(y21)
Figure Forward Transadmittance Drain Current
Figure Short Circuit Forward Transfer Admittance
TELEFUNKEN Semiconductors Rev. 23-Jan-97
BF966S
400MHz
12773
ID=5mA 10mA 20mA
f=1300MHz 1000MHz 700MHz
100MHz
VDS=15V VG2S=4V f=100.1300MHz
(y22)
Figure Short Circuit Output Admittance
TELEFUNKEN Semiconductors Rev. 23-Jan-97
BF966S
mA;VG2S
120° j0.5 150° j0.2 1000
1300MHz 0.008 0.016
-j0.2
120° 150° 1000
180°
-150°
20mA 10mA -30° -30°
-j0.2
-120°
-60° -90°
Figure Forward transmission coefficient
1300MHz 1000 -j0.5
180°
-150°
20mA 10mA -30°
-120°
-60° -90°
Figure Input reflection coefficient
Figure Reverse transmission coefficient
j0.5
j0.2 1300MHz
1300MHz
-j0.5
Figure Output reflection coefficient
TELEFUNKEN Semiconductors Rev. 23-Jan-97
BF966S
Dimensions
12242
TELEFUNKEN Semiconductors Rev. 23-Jan-97
BF966S
Ozone Depleting Substances Policy Statement
policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
TELEFUNKEN Semiconductors Rev. 23-Jan-97

Input- mixerstages especially UHF-tuners. Features Integrate

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