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Silicon Planar Diodes Very reverse current Applications
Top Searches for this datasheetBAS33.BAS34 Silicon Planar Diodes Very reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 9367 Absolute Maximum Ratings 25_C Parameter Reverse voltage Peak forward surge current Forward current Junction temperature Storage temperature range Test Conditions Type BAS33 BAS34 Symbol IFSM Tstg Value -65.+200 Unit tp=1ms Maximum Thermal Resistance 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value Unit TELEFUNKEN Semiconductors Rev. 24-Jun-96 BAS33.BAS34 Characteristics 25_C Parameter Forward voltage Reverse current Test Conditions IF=100mA 300lx, 300lx, Tj=125°C 300lx, VR=15V 300lx, VR=30V IR=5mA, tp/T=0.01, tp=0.3ms Type Symbol V(BR) V(BR) Unit Breakdown voltage Diode capacitance BAS33 BAS34 BAS33 BAS34 VR=0, f=1MHz Typical Characteristics 25_C unless otherwise specified) 10000 Reverse Current VRRM 1000 Scattering Limit Forward Current 1000 25°C Scattering Limit 9079 9078 Junction Temperature Forward Voltage Figure Reverse Current Junction Temperature Figure Forward Current Forward Voltage Dimensions Cathode Identification 0.55 max. technical drawings according specifications 9366 max. Standard Glass Case 41880 JEDEC Weight max. min. max. min. TELEFUNKEN Semiconductors Rev. 24-Jun-96 BAS33.BAS34 Ozone Depleting Substances Policy Statement policy TEMIC TELEFUNKEN microelectronic GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs). Montreal Protocol 1987) London Amendments 1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency EPA) Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. TEMIC certify that semiconductors manufactured with ozone depleting substances contain such substances. reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer TEMIC products unintended unauthorized application, buyer shall indemnify TEMIC against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423 TELEFUNKEN Semiconductors Rev. 24-Jun-96 Other recent searchesVSR144 - VSR144 VSR144 Datasheet VP-55LL - VP-55LL VP-55LL Datasheet VIC068A - VIC068A VIC068A Datasheet ML670100 - ML670100 ML670100 Datasheet FN8189 - FN8189 FN8189 Datasheet FDP6676 - FDP6676 FDP6676 Datasheet FDB6676 - FDB6676 FDB6676 Datasheet
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