Short Circuit Operation 6.5kV IGBTs This application note present

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Short Circuit Operation 6.5kV IGBTs This application note present

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Date: 02-07-05 AN-Number: AN2002-05 Page
Short Circuit Operation 6.5kV IGBTs
This application note presents aspects driving IGBTs, which allow safe short circuit operation 6.5kV IGBTs. following picture shows short circuit turn-off FZ600R65KF1 with without clamping gate voltage under identical operation conditions (Vce (black) 1kV/div, (red) 1kA/div, (blue) 5VGE/div). apparent that gate voltage rate rise left side limited overswing occurs: max. gate voltage reaches 15.3V peak short circuit current limited approximately 3000A. contrast, picture right, gate voltage rises without clamping 16.3V short circuit current reaches peak value 3800A.
reason this behavior positive feedback provided Miller capacity, which feeds back positive current into gate when collector voltage rising. This results increase gate voltage well short circuit peak current. They exceed maximum admissible current level (for FZ600R65KF1 e.g. 6xInom 3600A), which lead thermal destruction module. When considering tolerances line voltages, common working voltages 6.5kV IGBT range 3000.4400V strong increase Miller capacity Vcc, possible oscillations voltage levels occur. strongly recommend perform short circuit tests voltages below 2500V.
eupec GmbH D-59581 Warstein Author: Thomas Tel. +49(0)2902 764-1153 +49(0)2902 764-1150 Email: thomas.schuetze@eupec.com www.eupec.com
Infineon Technologies Company
Short circuit operation 6.5kV IGBTs
Date: 02-07-05 AN-Number: AN2002-05
ISC_peak f(VGE_peak)
ISC_peak Inom.
Page
dependency
between
peak short circuit current gate voltage given diagram left. ensure safe operation under short circuit conditions, effective limitation peak current means clamping gate voltage values below 15.3 guaranteed.
VGE_peak
Measures limit gate voltage current respectively are: Clamping gate voltage fixed potential gate driver supply stable, internal 15V, gate voltage should clamped this potential feedback diode with voltage drop (Schottky diode). lower inductive connection between supply gate terminals, more effective this measure will Clamping gate voltage gate-emitter Zener diodes closer diodes mounted
+15V Dshottky
auxiliary terminals module, more effective this measure. Diodes with temperature drift tolerance (e.g. transient voltage suppressor diodes) should used.
Vzge
accordance with above explanations, following condition fulfilled room temperature: Vz*(1+a T*(-25°C))*(1+tol) 15.3V with nominal Zener diode voltage temperature coefficient
Short circuit operation 6.5kV IGBTs
Date: 02-07-05 AN-Number: AN2002-05
max. operation temperature 8*10 (~12mV/K)
Page
tol: tolerance Zener diode with tol:
selected: 1.5KE6.8CA plus 1.5KE7.5CA (bi-directional) 50°C (assumption)
chosen gate voltage 14.0V turn-on resistor Rgon reduced Ohm. This keep switching losses value given data sheet 15V. reduction gate voltage negligible influence turn-off losses. Introduction negative emitter feedback this measure emitter gate-driver must customary connected auxiliary emitter, main emitter terminals. induced voltage drop inside module superimposed externally applied gate voltage. typically high short circuit di/dts, negative feedback leads effective reduction gate voltage. addition, overshoot gate voltage avoided. impact this measure shown following picture:
kVolt Volt Volt
kVolt Volt Volt
This dynamic reduction gate voltage also lowers di/dt regular turn-on process. omitting which given data sheet, required under this operation condition longer, this measure does result increase turn-on losses.

Short Circuit Operation 6.5kV IGBTs This application note present

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