TrenchFETs from Siliconix offer greatly reduced on-resistance compared

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TrenchFETs from Siliconix offer greatly reduced on-resistance compared

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Siliconix Technology Backgrounder: TrenchFETt Power MOSFETs
TrenchFETs from Siliconix offer greatly reduced on-resistance compared with other power MOSFETs same package size. result many years development, TrenchFETs offer unparalleled performance applications from automotive airbags uninterruptible power supplies.
Most commercially available vertical discrete power MOSFETs referred "planar" because MOSFET channel formed double-diffused region under gate occurs along surface silicon.
Gate
Source
P-Body
P-Body
N-Epi N-Sub
Drain
Vertical Planar DMOS Cross Section
current flow vertical because current emanating from channel must turn flow vertically wafer's backside. While voltage scaling achieved remarkable performance improvements planar DMOS devices, their maximum beneficial cell density fundamentally limited.
DS(on) Planar DMOS Constant Poly Gate Opening
Trench
Planar DMOS Constant Poly Gate Dimmension
Cell Density (Mcell/cm2)
Specific On-resistance Packing Density
Siliconix
Beyond certain density, parasitic junction intrinsic construction vertical DMOS produces per-cell increase resistance proportion cell density, negating beneficial effects smaller cell size. This phenomenon places upper bound cell density, thereby essentially limiting lowest value on-resistance achievable planar DMOS device type.
Resistivity
Poly Gate Dimension (mm)
Electrical Limit Scaling
Source
Source
P-Body
P-Body
While this device been discussed literature well over decade, commercial introduction delayed number difficult technical manufacturing challenges.
N-Epi N-Sub
TrenchFET Power MOSFET Cross Section
Siliconix
overcome this restriction, current flow channel device must redirected vertically, direct path between topside source backside drain contact. well-known power device type capable avoiding parasitic series JFET problem trench U-groove vertical power MOSFET.
Source
Source
Trench
1994, Siliconix introduced first generation TrenchFETs, family 60-V power MOSFETs built million cells square inch technology. million cells square inch, newest 30-V TrenchFETs developed Siliconix have surpassed 100,000 transistor chip criterion generally regarded minimal definition VLSI. This transistor count been achieved assembled small-footprint SO-8 (LITTLE FOOT®) package.
Trench DS(on) active Specific On-Resistance Planar DMOS Planar DMOS Density Cell Density (Mcells/cm
Trench 1980 2000
Year
TrenchFET Power MOSFET Cross Section
Building 60-V TrenchFET expertise, Siliconix developed double-diffused 30-V product while effecting another increase cell density. These second generation Trench densities were made possible optimizing device 30-V operation through commitment continuous improvement manufacturing. such densities, DPAK TO-220 sized transistor count comparable 32-bit microprocessor-over 400,000 transistors.
Siliconix

TrenchFETs from Siliconix offer greatly reduced on-resistance compared

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