P-Channel JFETs J270 J271 Product Summary J/SST270 J/SST271

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P-Channel JFETs J270 J271 Product Summary J/SST270 J/SST271

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J/SST270 Series
P-Channel JFETs
J270 J271 Product Summary
J/SST270 J/SST271
SST270 SST271
VGS(off)
V(BR)GSS (mS)
IDSS (mA)
Features
Cutoff Voltage: J270 High Input Impedance Very Noise High Gain
Benefits
Full Performance from Low-Voltage Power Supply: Down Signal Loss/System Error High System Sensitivity High-Quality, Low-Level Signal Amplification
Applications
High-Gain, Low-Noise Amplifiers Low-Current, Low-Voltage Battery Amplifiers Ultrahigh Input Impedance Pre-Amplifiers High-Side Switching
Description
J/SST270 series consists all-purpose amplifiers designs requiring p-channel operation. TO-226AA (TO-92) plastic package provides low-cost option, while TO-236 (SOT-23) package
TO-226AA (TO-92) View View J270 J271 SST270 (S0)* SST271 (S1)* *Marking Code TO-236
provides surface-mount capability. Both series available tape-and-reel automated assembly (see Packaging Information).
TO-236 (SOT-23)
Absolute Maximum Ratings
Gate-Drain Voltage Gate-Source Voltage Gate Current Storage Temperature 150_C Operating Junction Temperature 150_C Lead Temperature (1/16" from case sec.) 300_C Power Dissipationa Notes Derate mW/_C above 25_C
Updates this data sheet obtained facsimile calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70258.
Siliconix P-37405-Rev. 04-Jul-94
J/SST270 Series
Specificationsa
Limits
J/SST270 J/SST271
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain Cutoff Current Gate-Source Forward Voltage
Symbol
Test Conditions
Typb
Unit
V(BR)GSS VGS(off) IDSS IGSS ID(off) VGS(F)
125_C
-0.7
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Ciss Crss PSCIA
Notes 25_C unless otherwise noted. Typical values DESIGN ONLY, guaranteed subject production testing. Pulse test: v300 duty cycle v3%.
Typical Characteristics
rDS(on) Drain-Source On-Resistance
On-Resistance Drain Current Gate-Source Cutoff Voltage
IDSS
-100 Forward Transconductance (mS) Saturation Drain Current (mA)
Forward Transconductance Output Conductance Gate-Source Cutoff Voltage
Output Conductance
IDSS VGS(off) Gate-Source Cutoff Voltage
VGS(off) Gate-Source Cutoff Voltage
Siliconix P-37405-Rev. 04-Jul-94
J/SST270 Series
Typical Characteristics (Cont'd)
Output Characteristics
Drain Current (mA)
Output Characteristics
-1.6 Drain Current (mA)
-1.6
-1.2
-1.2 -0.8
-0.8 -0.4 VGS(off) -0.2 -0.4 -0.6 -0.8 Drain-Source Voltage
-0.4 VGS(off) -0.1 -0.2 -0.3 -0.4 -0.5 Drain-Source Voltage
Output Characteristics
VGS(off) Capacitance (pF)
Capacitance Gate-Source Voltage
Drain Current (mA)
Crss
Ciss
Gate-Source Voltage
Drain-Source Voltage
Transfer Characteristics
VGS(off) Drain Current (mA) Drain Current (mA)
Transfer Characteristics
VGS(off)
-55_C 25_C
-55_C 25_C
125_C
125_C
Gate-Source Voltage
Gate-Source Voltage
Siliconix P-37405-Rev. 04-Jul-94
J/SST270 Series
Typical Characteristics (Cont'd)
Forward Transconductance (mS)
Transconductance Drain Current
VGS(off) Output Conductance
Output Conductance Drain Current
VGS(off)
-55_C 125_C
-55_C 25_C
25_C
125_C
-0.1 Drain Current (mA)
-0.1 Drain Current (mA)
rDS(on) Drain-Source On-Resistance
On-Resistance Drain Current
25_C rDS(on) Drain-Source On-Resistance
On-Resistance Temperature
changes 0.7%/_C
VGS(off)
VGS(off)
Temperature (_C)
Drain Current (mA) -100
Noise Voltage Frequency
Gate Leakage Current
-0.1
125_C
Gate Leakage
IGSS 125_C 25_C IGSS 25_C
Noise Voltage
Frequency (Hz)
Drain-Gate Voltage
Siliconix P-37405-Rev. 04-Jul-94

P-Channel JFETs J270 J271 Product Summary J/SST270 J/SST271

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