Matched N-Channel JFET Pairs 2N5911 2N5912 VGS(off) V(B

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Matched N-Channel JFET Pairs 2N5911 2N5912 VGS(off) V(B

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2N5911/5912
Matched N-Channel JFET Pairs
2N5911 2N5912
VGS(off)
V(BR)GSS
(mS) (pA)
jVGS1 VGS2j (mV)
Features
Two-Chip Design High Slew Rate Offset/Drift Voltage Gate Leakage: Noise High CMRR:
Benefits
Minimum Parasitics Ensuring Maximum High-Frequency Performance Improved Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal
Applications
Wideband Differential Amps High-Speed, Temp-Compensated, Single-Ended Input Amps High Speed Comparators Impedance Converters
Description
2N5911/5912 matched pairs JFETs mounted TO-78 package. This two-chip design reduces parasitics gives better performance high frequencies while ensuring extremely tight matching. hermetically-sealed TO-78 package available with full military screening MIL-S-19500 (see Military Information).
TO-78
similar products SO-8 packaged SST440/SST441, TO-71 packaged U440/U441, low-noise SST/U401 series, low-leakage U421/423 data sheets.
Case View
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage Gate-Gate Voltage Gate Current Lead Temperature (1/16" from case sec.) 300_C Storage Temperature 200_C Operating Junction Temperature 150_C Power Dissipation Sidea Totalb
Notes Derate mW/_C above 25_C Derate mW/_C above 25_C
Updates this data sheet obtained facsimile calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70255. Applications information also obtained FaxBack, request document #70595.
Siliconix P-37407-Rev. 04-Jul-94
2N5911/5912
Specificationsa
Limits
2N5911 2N5912
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current
Symbol
Test Conditions
Typb
Unit
V(BR)GSS VGS(off) IDSS IGSS VGS(F)
150_C 125_C
-3.5 -0.3 -1.5
-100 -250 -100 -100 -0.3
-100 -250 -100 -100 -0.3
Gate Operating Current Gate-Source Voltage Gate-Source Forward Voltaged
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure Ciss Crss
Matching
Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratio Transconductance Ratio |VGS1 VGS2| 125_C 125_C 0.98 0.98 0.95 0.95 0.95 0.95 mV/_C
D|VGS1 VGS2| DSS1 DSS2 gfs1 gfs2 CMRR
Differential Gate Current Common Mode Rejection Ratiod
0.005
Notes 25_C unless otherwise noted. Typical values DESIGN ONLY, guaranteed subject production testing. Pulse test: v300 duty cycle v3%. This parameter registered with JEDEC.
Siliconix P-37407-Rev. 04-Jul-94
2N5911/5912
Typical Characteristics
Saturation Drain Current (mA)
Drain Current Transconductance Gate-Source Cutoff Voltage
IDSS
Forward Transconductance (mS)
Gate Leakage Current
IG(on)
125_C Gate Leakage 25_C IGSS 125_C
IDSS
IGSS 25_C
VGS(off) Gate-Source Cutoff Voltage
Drain-Gate Voltage
Output Characteristics
VGS(off)
Output Characteristics
VGS(off) -0.5
Drain Current (mA) Drain Current (mA) -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5
Drain-Source Voltage
Drain-Source Voltage
Output Characteristics
VGS(off) Drain Current (mA) -0.2 Drain Current (mA) -0.4 -0.6 -0.8 -1.0 -1.2 Drain-Source Voltage
Output Characteristics
VGS(off) -0.5
-2.0
-1.0 -1.5 -2.5 -3.0
-3.5
Drain-Source Voltage
Siliconix P-37407-Rev. 04-Jul-94
2N5911/5912
Typical Characteristics (Cont'd)
Transfer Characteristics
VGS(off)
Transfer Characteristics
VGS(off)
Drain Current (mA) -55_C 25_C Drain Current (mA)
-55_C 25_C
125_C
125_C
-0.4 -0.8 -1.2 -1.6 Gate-Source Voltage
Gate-Source Voltage
Forward Transconductance (mS)
Transconductance Gate-Source Voltage
Forward Transconductance (mS) VGS(off)
Transconductance Gate-Source Voltage
VGS(off)
-55_C 25_C 125_C
25_C 125_C -55_C
-0.4 -0.8 -1.2 -1.6 Gate-Source Voltage
Gate-Source Voltage
Circuit Voltage Gain Drain Current
rDS(on) Drain-Source On-Resistance
On-Resistance Drain Current
VGS(off) Voltage Gain VGS(off)
VGS(off)
Assume
25_C Drain Current (mA)
Drain Current (mA)
Siliconix P-37407-Rev. 04-Jul-94
2N5911/5912
Typical Characteristics (Cont'd)
Common-Source Input Capacitance Gate-Source Voltage
Reverse Feedback Capacitance (pF)
Common-Source Reverse Feedback Capacitance Gate-Source Voltage
Input Capacitance (pF)
Gate-Source Voltage
Gate-Source Voltage
Input Admittance
25_C (mS) 25_C -bfs
Forward Admittance
(mS)
-gfg
1000 Frequency (MHz) 1000 Frequency (MHz)
25_C (mS) -brs
Reverse Admittance
25_C (mS)
Output Admittance
-brg -grg 0.01 1000 Frequency (MHz) -grs
bog,
gog, 1000
Frequency (MHz)
Siliconix P-37407-Rev. 04-Jul-94
2N5911/5912
Typical Characteristics (Cont'd)
Equivalent Input Noise Voltage Frequency
Output Conductance Drain Current
VGS(off)
Output Conductance
-55_C 25_C
Noise Voltage
125_C
Frequency (Hz)
Drain Current (mA)
rDS(on) Drain-Source On-Resistance
On-Resistance Output Conductance Gate-Source Cutoff Voltage
Forward Transconductance (mS)
Common-Source Forward Transconductance Drain Current
VGS(off)
Output Conductance
-55_C 25_C 125_C
VGS(off) Gate-Source Cutoff Voltage
Drain Current (mA)
Siliconix P-37407-Rev. 04-Jul-94

Matched N-Channel JFET Pairs 2N5911 2N5912 VGS(off) V(B

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