J210 J211 J212 Product Summary J210 J/SSTJ211 J/SSTJ212 SSTJ

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

J210 J211 J212 Product Summary J210 J/SSTJ211 J/SSTJ212 SSTJ

Datasheet Thumbnail

Top Searches for this datasheet

J/SSTJ210 Series
J210 J211 J212 Product Summary
J210 J/SSTJ211 J/SSTJ212
SSTJ211 SSTJ212
VGS(off)
-2.5 -4.5
V(BR)GSS
(mS)
IDSS (mA)
Features
Excellent High Frequency Gain: J211/212, (typ) Very Noise: (typ) Very Distortion High ac/dc Switch Off-Isolation High Gain:
Benefits
Wideband High Gain Very High System Sensitivity High Quality Amplification High-Speed Switching Capability High-Quality Low-Level Signal Amplification
Applications
High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Capacitance Switches
Description
J/SSTJ210 Series n-channel JFETs general-purpose high-frequency amplifiers wide range applications. These devices feature leakage (IGSS pA). while TO-236 (SOT-23) package provides surface-mount capability. J/SSTJ210 Series available tape-and-reel automated assembly (see Packaging Information).
TO-226AA (TO-92) plastic package, provides cost
similar dual products, 2N5911/5912 U440/441 data sheets.
TO-226AA (TO-92) J210 J211 J212
TO-236 (SOT-23)
SSTJ211 (Z1)* SSTJ212 (Z2)* *Marking Code TO-236
View View
Updates this data sheet obtained facsimile calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70234. Applications information also obtained FaxBack, request document #70597.
Siliconix S-52428-Rev. 14-Apr-97
J/SSTJ210 Series
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage Gate Current Lead Temperature (1/16" from case sec.) 300_C Storage Temperature 150_C Operating Junction Temperature 150_C Power Dissipationa Notes Derate mW/_C above 25_C
Specificationsa
Limits
J210 J/SSTJ211 J/SSTJ212
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentb
Symbol
Test Conditions
Typb
Unit
V(BR)GSS VGS(off) IDSS IGSS ID(off) VGS(F)
125_C
-100
-2.5 -4.5 -100
-100
-0.5
Drain Cutoff Current Gate-Source Forward Voltage
Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Ciss Crss
Notes 25_C unless otherwise noted. Typical values DESIGN ONLY, guaranteed subject production testing. Pulse test: v300 duty cycle v3%.
Siliconix S-52428-Rev. 14-Apr-97
J/SSTJ210 Series
Typical Characteristics (25_C Unless Noted)
Saturation Drain Current (mA)
Drain Current Transconductance Gate-Source Cutoff Voltage
IDSS
Forward Transconductance (mS)
Gate Leakage Current
IG(on) 125_C
Gate Leakage
IGSS 125_C 25_C
IDSS
IGSS 25_C
VGS(off) Gate-Source Cutoff Voltage
Drain-Gate Voltage
rDS(on) Drain-Source On-Resistance
On-Resistance Output Conductance Gate-Source Cutoff Voltage
Forward Transconductance (mS)
Common-Source Forward Transconductance Drain Current
VGS(off)
Output Conductance
-55_C 25_C 125_C
VGS(off) Gate-Source Cutoff Voltage
Drain Current (mA)
Output Characteristics
VGS(off) Drain Current (mA) -0.2 Drain Current (mA) -0.4 -0.6 -0.8 -1.0 -1.2 Drain-Source Voltage
Output Characteristics
VGS(off)
-0.5 -2.0 -1.0 -1.5
-2.5 -3.0
-3.5
Drain-Source Voltage
Siliconix S-52428-Rev. 14-Apr-97
J/SSTJ210 Series
Typical Characteristics (25_C Unless Noted)
Output Characteristics
VGS(off)
Output Characteristics
-0.5 -1.0
Drain Current (mA) Drain Current (mA) -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-1.5 -2.0
-2.5 -3.0
VGS(off)
-3.5
Drain-Source Voltage
Drain-Source Voltage
Transfer Characteristics
VGS(off)
Transfer Characteristics
VGS(off)
Drain Current (mA) -55_C 25_C Drain Current (mA)
-55_C 25_C 125_C
125_C
-0.4 -0.8 -1.2 -1.6 Gate-Source Voltage Forward Transconductance (mS)
Gate-Source Voltage Forward Transconductance (mS)
Transconductance Gate-Source Voltage
VGS(off) 25_C
Transconductance Gate-Source Voltage
VGS(off)
-55_C
-55_C 25_C 125_C
125_C
-0.4 -0.8 -1.2 -1.6 Gate-Source Voltage
Gate-Source Voltage
Siliconix S-52428-Rev. 14-Apr-97
J/SSTJ210 Series
Typical Characteristics (25_C Unless Noted)
rDS(on) Drain-Source On-Resistance
On-Resistance Drain Current
Circuit Voltage Gain Drain Current
VGS(off) Voltage Gain
Assume
VGS(off)
VGS(off) VGS(off)
25_C Drain Current (mA)
Drain Current (mA)
Common-Source Input Capacitance Gate-Source Voltage
Reverse Feedback Capacitance (pF)
Common-Source Reverse Feedback Capacitance Gate-Source Voltage
Input Capacitance (pF)
Gate-Source Voltage
Gate-Source Voltage
Input Admittance
25_C (mS) 25_C
Forward Admittance
(mS)
-bfs
-gfg
1000 Frequency (MHz) 1000 Frequency (MHz)
Siliconix S-52428-Rev. 14-Apr-97
J/SSTJ210 Series
Typical Characteristics (25_C Unless Noted)
25_C (mS) -brs (mS)
Reverse Admittance
25_C
Output Admittance
-brg -grs
bog,
-grg 0.01
1000
gog, 1000
Frequency (MHz)
Frequency (MHz)
Equivalent Input Noise Voltage Frequency
Output Conductance Drain Current
VGS(off) -55_C
Output Conductance
Noise Voltage
25_C
125_C
Frequency (Hz)
Drain Current (mA)
Siliconix S-52428-Rev. 14-Apr-97

J210 J211 J212 Product Summary J210 J/SSTJ211 J/SSTJ212 SSTJ

Top Searches for this datasheet

Other recent searches