Characteristics Hewlett-Packard offers broad line Radio Frequency

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Characteristics Hewlett-Packard offers broad line Radio Frequency

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RFIC MMIC Amplifiers
Characteristics
Hewlett-Packard offers broad line Radio Frequency Integrated Circuit (RFIC) Monolithic Microwave Integrated Circuit (MMIC) amplifiers aspects communications industry. Processes variety processes used fabricate Hewlett-Packard RFICs MMICs. These processes specifically designed optimize each product family maximum performance. process: Hewlett-Packard's state-of-the-art fMAX silicon transistor process used manufacture line RFIC amplifiers. Diffused resistors added this joinedbackside-collector process create feedback bias elements. ISOSAT Process: Trench isolation coupled with transistor engine create process optimized high speed analog integrated circuits. Material processing enhancements raise nominal this process above
GHz. Design flexibility enhanced through addition second metal capability, availability such on-chip elements capacitors, diodes, high valued resistors. This process also utilizes polyimide inter-metal dielectric scratch protection. MESFET process: Hewlett-Packard number Gallium Arsenide MESFET processes, variously optimized gain, noise performance, power. PHEMT process: GaAs MMICs processed using this technology targeted markets putting premium noise figure improved device-to-device consistency. Product Families HMMC series GaAs MMICs designed high performance applications microwave millimeter wave frequency ranges. These devices, supplied only chips, fabricated MESFET PHEMT processes. MMIC amplifiers available variety combinations performance with frequencies GHz,
output power dBm, noise figure HPMX-3002 special purpose medium power amplifier designed driver applications range. This device, fabricated ISOSAT process, also incorporates power control feature. series family multi-stage, matched RFIC amplifiers featuring high gain noise figure. These general purpose amplifiers broad-band nature provide simple solution many applications. amplifiers fabricated ISOSAT process. series RFIC amplifiers fabricated ISOSAT process feature variable gain applications such AGC. family integrated circuit amplifiers fabricated with MESFET PHEMT processes. These products offer wide range performance features high frequencies, including noise figure medium output power. Amplifiers
series either matched partially matched series RFIC amplifiers two-transistor Darlington feedback, gain blocks. These simple ICs, fabricated process, provide designer with wide selection easy
broad-band, general purpose amplifiers suitable many different applications. Members this family differentiated output power, noise figure, bias requirements, specialty performance features such bandwidth dynamic range.

Characteristics Hewlett-Packard offers broad line Radio Frequency

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