Reliability/Quality Philosophy Recognizing increasing importance

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Reliability/Quality Philosophy Recognizing increasing importance

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Quality Assurance Concepts Methodology Semiconductor Devices Hybrid Assemblies
Reliability/Quality Philosophy
Recognizing increasing importance microwave component reliability consumer, industrial, military markets, Components Group Hewlett-Packard committed itself achieve error free performance levels manufacturing deliver highest level product quality reliability performance. Three basic ingredients integrated into manufacture reliable microwave components: device must designed with technical understanding user's applications quality requirements. device must manufactured with optimum stateof-the-art technology application. Controls must established manufacture device. major manufacturer microwave products, HewlettPackard produces broad family many devices. Since practical, technically necessary, cost effective qualify each these products life
environmental testing, logical approach been differentiate assembly/package related failure mechanisms from failure modes associated with wafer fabrication process. This "die process" "package product" approach reliability been consideration military standards microelectronic testing/ reliability used HewlettPackard with following definitions: Process Family consists devices which have appropriately similar wafer processing. This premise recognizes that component geometry layout product will have little impact reliability because established design rules apply products fabricated same process. Package/Assembly Family those like construction assembled with appropriately similar materials, manufacturing controls operations. Component reliability estimation therefore achieved with high confidence level from
environmental life testing data derived from various product families. Accelerated stress testing techniques employed obtain definitive working knowledge reliability performance, whereby resulting information used predict long-term device reliability intended application.
In-process Control Reliability Testing
reliability performance microwave components affected numerous operations associated with device manufacturing, among these being: Wafer fabrication process/ technology Device design layout Packaging design manufacturing processes Wafer fabrication Package materials Assembly materials procedures In-process controls Final electrical test procedures Quality Assurance inspection procedures Post-assembly reliability screening
most important aspects insuring quality reliability through adequate in-process controls these operations. Wafer fabrication controls provide
assembly operation with high quality, reliable chip, while process controls associated with assembly operation assure optimum package
integrity. Typical Quality Assurance process controls summarized according fabrication assembly operations:
Quality Assurance Process Controls
Wafer Fabrication
Particle count Temperature/Humidity control Capacitance Voltage plots Furnace tube cleaning Deionized water checks Metal thickness monitor Metal monitor Inspection starting material Plating bath in-process monitor
Assembly
Visual shear test Wire bond pull Incoming package evaluation Pre-seal visual Hermeticity Electrical test Molding compound evaluation
Life Environmental Stress Tests
ensure highest product reliability commensurate with intended device, numerous life environmental tests have been designed assess device performance. majority these tests designed simulate more extreme operating conditions than would actually encountered most practical applications. This ensures reliability performance device relative intended application. Typical device testing Hewlett-Packard include following environmental life tests, appropriate.
Environmental Tests
Moisture Resistance Hermeticity Solderability Mechanical Shock Thermal Shock Lead Fatigue Temperature Cycling Vibration Autoclave Constant Acceleration Terminal Strength Salt Atmosphere Marking Permanency Specific methods conditions these tests compliance with MIL-STD-202, MIL-STD-750, MIL-STD-883 JEDEC JESD22 test specifications, depending upon nature device being tested functional classification.
Reliability Assessment Prediction
Numerous concepts mathematical models have been proposed assess reliability performance semiconductor components. these, essentially three fundamental parameters widely used industry reliability assessment prediction failure rate: failure rate, probability survival, activation energy, Failure Rate related population units failed under life testing duration test
Life Tests
High Temperature Reverse Bias (HTRB) High Temperature Operating Life (HTOL)
where assessed failure rate quantity failures occurring time interval quantity acceptable devices zero hours time interval duration test
Generally more meaningful discuss failure rates terms Mean Time Failures MTTF, which reciprocal failure rate expressed MTTF important recognize that both MTTF statistical averages apply only useful life product. Probability Survival likelihood that particular device will survive given period operating time expressed -t/(MTTF) where operating time device failure rate 1/MTTF third mathematical relationship importance reliability expressed form Arrhenius Equation which relates rate thermally accelerated process temperature
plot versus will yield straight line illustrated:
Reliability Monitor Program
reliability monitor program administered executed Quality Assurance Department. intent this program provide periodic evaluation product reliability on-going basis, exemplified matrix that follows.[1] maintain pulse fabrication assembly processes. identify, long-term stress testing, limitations products thereby provide future direction engineering design, development, manufacturing improvements. Fabrication assembly variables were considered construction matrix assure that these products would best represent product families their associated processes with meaningful volumes. addition following listed products, products must pass extensive reliability test program prior introduction. This ensures that tradition high quality upheld devices.
Note: Periodic defined somewhere between months, depending upon current production volumes. products added matrix appropriate, once volume production established.
SLOPE extrapolated line
activation energy therefore determined (slope) products which extremely reliable, failure rates measured within reasonable test duration. that case, failure rate determined stressing parts elevated temperature extrapolating along straight line, plot illustrated above, temperature interest. temperature interest junction temperature, ambient temperature, case temperature, whichever conditions user most concerned about. practice, simplified equation, with known used prediction failure rates different temperatures, determination acceleration factor, changing stress temperature from expressed
where Activation Energy Boltzmann's Constant (8.62 10-5 eV/°K) Temperature Kelvin (°K) Failure Rate Temperature Constant
Reliability Monitor Process/Device Matrix
Product Type
Diode
Fabrication Process
Schottky
Package Process
Glass, Hermetic Plastic
Package Type
SOT-23/-143 SOT-323
Device Group
5082-28XX HSMS-281X HSMS-282X HSMS-820X 5082-30XX HSMP-380X HSMP-389X HSMP-389X AT-4XX8X AT-3XX11/33 AT-33X25 MSA-XX0X MSA-XX8X INA-XXX8X INA-3XX11 INA-5XX63 IAM-XXX08 HPMX-200X IAM-XXX28 ATF-1XX70 ATF-1XX3X ATF-1XX8X ATF-2XX8X ATF-3XX7X MGA-8XX63
Typical Device
5082-2800 HSMS-2810 HSMS-2820 HSMS-820B 5082-3039 HSMP-3800 HSMP-3890 HSMP-389B AT-41485 AT-31033 AT-33225 MSA-1105 MSA-0886 INA-03184 INA-30311 INA-51063 IAM-81008 HPMX-2003 IAM-82028 ATF-13170 ATF-13036 ATF-13284 ATF-21186 ATF-36077 MGA-86563
Glass, Hermetic Plastic
SOT-23/-143 SOT-323
Bipolar Transistor; Integrated Circuit
Plastic
SOT-23/-143 SOT-223
ISOSAT, Single-Level Metal ISOSAT, Double-Level Metal
Plastic Plastic
SOT-143 SOT-363 SOIC-8 SOIC-16
Ceramic, Hermetic GaAs Transistor; Integrated Circuit Lifted-Y Gate Ceramic, Hermetic Ceramic, Non-Hermetic Plastic Plated-Y Gate PHEMT Plastic Ceramic, Non-Hermetic Plastic
SOIC-8 SOT-363
Reliability Monitor Test Conditions
Test
Operating Life
Conditions
1000 switch between maximum forward power discrete diodes, typical bias elevated temperature that enables maximum junction temperature transistors, amplifiers 1000 (min) max. rated temp. cycles max/min storage temperature, liquid liquid cycles max/min storage temperature, 1500 msec pulse axis Fine Gross Leak 121°C, 100% psig 1000 85°C steam aging, 245°C, dwell Resistance solvent groups Lead Pull passes temp 10°C, preheat 25°C secs max, temp above 183°C secs
High Temperature Reverse Bias (for diodes only) Thermal Shock Temperature Cycling Mechanical Shock Hermeticity Autoclave Moisture Resistance Solderability Marking Permanency Lead Integrity Infrared Reflow Simulation
Notes: Required hermetic packages only Required plastic packages only Required non-hermetic ceramic packages only; optional alternative autoclave plastic packages. Unbiased GaAs devices. Surface mount plastic packages only
Reliability Monitor Sample Sizes
Reliability Monitor Matrix[1]
units (for diodes), units transistors units diodes, units transistors Life units) HTRB units diodes) units units units units
Environmental/ Lead Integrity Solderability Marking Permanency Mechanical Tests[2]
Notes: frequency test every three months. For: Hermetic: units) Hermeticity Thermal Shock Mechanical Shock Hermeticity units) Hermeticity Temperature Cycling Hermeticity Plastic: units) Preconditioning Thermal Shock Autoclave Moisture Resistance units) Preconditioning Temperature Cycling Preconditioning Test consists Moisture Soak 85°C/85% Reflow passes units) Temperature Cycling
Non-Hermetic: units) Thermal Shock Mechanical Shock Moisture Resistance Ceramic:

Reliability/Quality Philosophy Recognizing increasing importance

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