Compact, inductive IGBT pack innovative inverter design from baseless

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Compact, inductive IGBT pack innovative inverter design from baseless

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SKiM IGBT packs
Compact, inductive IGBT pack innovative inverter design from baseless module with Al2O3 (standard) substrates high load capability improved thermal conductivity. IGBT chip technologies optimised different applications: general purposes 1200 1700 Trench IGBT with state losses 1200 1700 IGBT with optimised trade between on-state switching energy Freewheeling Diodes technology Optimised IGBT driver with multiple security functions available (ref. Chapter SEMIDRIVER), SKiM SKHI SKiM SKHI
Type designation
SKiM 00460
SKiM: SEMIKRON integrated Module Collector current grade: 25°C Mechanical feature: standard module center posts additional mechanical support Power Semiconductor: IGBT Circuit: phase bridge (IEC B6CI) Collector emitter voltage grade 100: 600V 1200V 1700V Chip generation: NPT-IGBT, 600V types only Trench-IGBT, 1200V 1700V types SPT-IGBT, 1200V 1700V types IGBT freewheeling Diode: Diode Special features substrate Heatsink specific suffixes SKiM-systems
SEMIKRON
2002-10-21

Compact, inductive IGBT pack innovative inverter design from baseless

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