Fig. Description Typical output characteristic, including resistance f
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Fig. Description Typical output characteristic, including resistance from terminal chip Collector -emitter voltage function output current given Maximum rated current IGBT element function heat sink temperature mounted module. Typical turn-on turn-off energy dissipation Eon, Eoff function collector current pulse IGBT freewheeling diode mixed resistive inductive load using suitable gate resistor Typical turn-on turn-off energy dissipation Eon, Eoff function gate resistor pulse IGBT freewheeling diode. RGon RGoff selected different values. Typ. transfer characteristic, collector current function gate- emitter voltage VGE. Typ. gate charge characteristic, gate-emitter voltage function gate emitter charge Typ. switching times (tdon, tdoff IGBT function collector current given gate resistance with inductive load free-wheeling diode. Typ. switching times (tdon, tdoff IGBT function gate resistance given collector current with inductive load free-wheeling diode. Transient thermal impedance junction heat sink Zth(j-s) IGBT element function time elapsed after step change power dissipation ("single pulse") thermal impedance under pulse conditions junction heat sink R(th(j-s) function pulse duration different duty cycle Transient thermal impedance junction heat sink Zth(j-s) freewheeling diode function time elapsed after step change power dissipation ("single pulse") thermal impedance under pulse conditions junction heat sink Rth(j-s) function pulse duration different duty cycle diode forward characteristic, forward voltage typical maximum values given junction temperatures function forward current diode peak reverse recovery current function diF/dt. Typical maximum values given temperature. Typ. diode reverse recovery charge function diF/dt. Parameter: RGon
SEMIKRON
2002-10-21
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