BVDSS VOLTS AMPS 3.50 3.50 2.5/3.5 5.00 6.00 7.00 2.50 3.50 5.00 5.80
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DUAL POWER MOSFETs
BVDSS VOLTS AMPS 3.50 3.50 2.5/3.5 5.00 6.00 7.00 2.50 3.50 5.00 5.80 6.00 8.00 2.00 2.50 3.50 rDS(ON) OHMS 0.150 0.050 0.037 0.032 0.025 0.130 0.130 0.090 rDS(ON) OHMS 0.050 0.130 0.050/0.130 0.045@4.5V 0.037@4.5V 0.023@4.5V 0.060 0.072 0.055 0.041 0.034@4.5V 0.105 0.077 0.059 0.029 rDS(ON) 2.5V OHMS 1-888-INTERSIL 321-724-7143
TYPE Dual Dual Complementary Dual Dual Dual Dual Dual Dual Dual Dual Dual Dual Dual Dual
MS-012AA (SO-8) RF1K49090 RF1K49093 RF1K49092 ITF87072DK8T RF1K49223 RF1K49088 HUF76105DK8 HP4936DY HUF76113DK8 ITF86110DK8T RF1K49154 RF1K49221 HUF76407DK8
MO-153AA (TSSOP-8) ITF87056DQT ITF87008DQT
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Power MOSFET Selection Guide
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THRU HOLE N-CHANNEL POWER MOSFETs
BVDSS VOLTS
AMPS 20.00 20.00 20.00 20.00 16.00 20.00 20.00 20.00 20.00 20.00 47.00 56.00 70.00 75.00 75.00 75.00 75.00 75.00 13.00 14.00 14.00 14.00 14.00 14.00 15.00 16.00 30.00 50.00 75.00
rDS(ON) OHMS 0.022 0.022 0.027 0.027 0.016 0.019 0.023 0.052 0.052 0.021 0.016 0.010 0.0045 0.0055 0.0075 0.009 0.011 0.120 0.100 0.100 0.100 0.047 0.040 0.008
rDS(ON) OHMS 0.030 0.030 0.039 0.039 0.022 0.021 0.024@4.5V 0.030 0.080 0.080 0.028 0.021 0.0058 0.0075 0.010 0.0125 0.016 0.100 0.100 0.140 0.022
TO-247 RFG75N05E
TO-220AB HUF76013P3 HUF76009P3 HUF76107P3 HUF76121P3 HUF76129P3 RFP70N03 HUF76145P3 HUF76143P3 HUF76139P3 HUF76137P3 HUF76132P3 BUZ71A BUZ71 RFP14N05 RFP14N05L RFP15N05L BUZ11 RFP50N05L
(I-PAK) TO-251AA HUF76103D3S HUF76009D3S RFD16N03L HUF76129D3 HPLU3103 HUF76121D3 HUF76107D3 RFD14N05 RFD14N05L RFD16N05
(HEXDIP) 4-PIN
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THRU HOLE N-CHANNEL POWER MOSFETs
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BVDSS VOLTS
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AMPS 15.00 15.00 17.00 17.00 20.00 20.00 35.00 49.00 49.00 49.00 60.00 60.00 66.00 66.00 75.00 75.00 75.00 75.00 75.00 75.00 75.00 75.00 75.00 75.00 100.00 2.00 11.00 12.00 12.00
rDS(ON) OHMS 0.090 0.090 0.070 0.070 0.026 0.036 0.034 0.022 0.024 0.025 0.019 0.019 0.016 0.016 0.007 0.007 0.008 0.008 0.009 0.009 0.012 0.012 0.014 0.014 0.008 0.092 0.092 0.150
rDS(ON) OHMS 0.160 0.107 0.107
TO-247 HUF75329G3 HUF75332G3 HUF75333G3 HUF75345G3 HUF75344G3 HUF75343G3 HUF75339G3 HUF75337G3
TO-220AB HUF75307P3 HUF75309P3 HUF75321P3 HRFZ44N HUF75329P3 HUF75332P3 HUF75333P3 HUF75345P3 HUF75344P3 HUF75343P3 HUF75339P3 HUF75337P3 HRF3205 HUF76407P3 RFP3055
(I-PAK) TO-251AA HUF75307D3 HUF75309D3 HUF75329D3 HUF75321D3 HUF76407D3
(HEXDIP) 4-PIN
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THRU HOLE N-CHANNEL POWER MOSFETs
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AMPS 12.00 12.00 12.00 12.00 14.00 17.00 17.00 20.00 20.00 20.00 20.00 22.00 27.00 30.00 33.00 44.00 45.00 55.00 64.00 70.00 70.00 71.00 75.00 75.00 75.00 75.00 75.00 75.00 1.00
rDS(ON) OHMS 0.150 0.100 0.062 0.063 0.023 0.032 0.037 0.049 0.049 0.035 0.030 0.022 0.028 0.017 0.014 0.014 0.014 0.012 0.0065 0.008 0.010 0.004@12V 0.010 0.014 0.600
rDS(ON) OHMS 0.150 0.135 0.150 0.070 0.071 0.027 0.037 0.043 0.056 0.056 0.040 0.047 0.035 0.025 0.019 0.017 0.014 0.0075 0.0095
TO-247 RFG70N06 HUF75555G3
TO-220AB RFP3055LE RFP14N06 HUF76409P3 HUF76413P3 HUF76419P3 RFP30N06LE HUF76423P3 HUF76429P3 RFP45N06 HUF76432P3 HUF76437P3 RFP70N06 HUF76439P3 HUF76445P3 HUF76443P3 HUFA7510P3 HUF75545P3 HUF75542P3
(I-PAK) TO-251AA RFD3055 RFD12N06RLE RFD3055LE HUF76409D3 HUF76429D3 HUF76423D3 HUF76419D3 HUF76413D3
(HEXDIP) 4-PIN
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THRU HOLE N-CHANNEL POWER MOSFETs
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BVDSS VOLTS
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AMPS 1.30 2.00 5.60 7.00 8.40 9.00 9.20 10.00 12.00 18.00 20.00 22.00 22.00 22.00 33.00 33.00 33.00 38.00 40.00 40.00 40.00 41.00 44.00 51.00 56.00 56.00 75.00 75.00 75.00
rDS(ON) OHMS 0.300 0.540 0.270 0.250 0.270 0.160 0.085 0.052 0.064 0.064 0.080 0.040 0.040 0.040 0.035 0.040 0.040 0.030 0.030 0.025 0.025 0.025 0.008 0.014 0.014
rDS(ON) OHMS 1.050 0.300 0.165 0.200 0.087 0.054 0.036 0.040 0.027 0.015
TO-247 RFG40N10 IRFP150N HUF75639G3 HUF75652G3
TO-220AB RFP2N10L IRF510 BUZ72A IRF520 RFP12N10L HUF75623P3 IRF530N RFP22N10 HUF75631P3 HUF76633P3 RFP40N10 RFP40N10LE HUF75637P3 HUF76639P3 HUF75639P3 HUF75645P3 HUF76645P3
(I-PAK) TO-251AA RFD7N10LE IRFU120 HUF76609D3 HUF76619D3 HUF76629D3
(HEXDIP) 4-PIN IRFD120
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THRU HOLE N-CHANNEL POWER MOSFETs
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AMPS 10.00 14.00 18.00 43.00 75.00 0.60 0.80 2.00 3.30 4.60 5.00 9.00 18.00 20.00 33.00 14.00 0.40 0.50 2.00 3.30 5.50 10.00 2.50 4.50 8.00 8.80 14.00 20.00 6.20
rDS(ON) OHMS 0.300 0.150 0.110 0.042 0.016 1.500 0.800 1.500 0.800 0.800 0.400 0.180 0.180 0.085 0.280 3.600 1.800 3.600 1.800 1.000 0.550 3.000 1.500 0.850 0.850 0.400 0.270 1.200
rDS(ON) OHMS 3.500
TO-247 HUF75852G3 IRFP240 IRFP250 IRFP440 IRFP450 IRFP460
TO-220AB RFP10N15 HUF75842P3 RFP2N20L IRF610 IRF620 IRF630 IRF640 IRF646 IRF710 IRF720 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC40
(I-PAK) TO-251AA HUF75823D3 HUF75829D3 IRFU220
(HEXDIP) 4-PIN IRFD210 IRFD220
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MOSFET Selection Guide
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Intersil Corporation 2000
THRU HOLE P-CHANNEL POWER MOSFETs
BVDSS VOLTS
AMPS 10.00 10.00 60.00 60.00 8.00 8.00 15.00 15.00 30.00 30.00 30.00 30.00 12.00 1.00 6.00 8.00 12.00 19.00 3.50 11.00
rDS(ON) OHMS 0.027 0.027 0.300 0.300 0.150 0.150 0.030 0.065 0.030 0.065 0.300 0.600 0.600 0.400 0.300 0.200 1.500 0.500
rDS(ON) OHMS 0.200 0.200
TO-247 RFG60P03 RFG60P05E RFG60P06E
TO-220AB RFP10P03L RFP60P03 RFP8P05 RFP15P05 RFP30P05 RFP30P06 RFP12P08 IRF9520 RFP8P10 IRF9530 IRF9540 IRF9620 IRF9640
(I-PAK) TO-251AA RFD10P03L RFD8P05 RFD15P05
(HEXDIP) 4-PINDIP IRFD9120
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MOSFET Selection Guide
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SURFACE MOUNT N-CHANNEL POWER MOSFETs
BVDSS VOLTS
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AMPS 6.30 6.00 4.00 4.30 5.50 6.30 6.30 6.50 10.00 10.00 10.00 11.50 14.00 16.00 20.00 20.00 20.00 20.00 47.00(so 56.00 70.00 75.00 75.00 75.00 75.00 75.00 14.00 14.00 15.00
rDS(ON) OHMS 0.023 0.031 0.050 0.030 0.030 0.012 0.0135 0.018 0.0115 0.0078 0.016 0.019 0.023 0.052 0.021 0.016 0.010 0.0045 0.0055 0.0075 0.011 0.009 0.100
rDS(ON) OHMS 0.020 0.035@4.5V 0.028 0.038 0.050 0.060@4.5V 0.030 0.038 0.016@4.5V 0.020 0.017 0.015 0.010@4.5V 0.022 0.021 0.024@4.5V 0.030 0.080 0.028 0.021 0.0058 0.0075 0.010 0.016 0.0125 0.100 0.065
rDS(ON) OHMS 2.5V 0.045
(D2-PAK) TO-263AB HUF76121S3S HUF76129S3S RF1S70N03SM HUF76145S3S HUF76143S3S HUF76139S3S HUF76132S3S HUF76137S3S
(D-PAK) TO-252AA RFD16N03LSM HUF76129D3S HPLR3103 HUF76121D3S HUF76107D3S RFD14N05SM RFD14N05LSM RFD15N06LESM
(SOT-223) TO-261AA HUF76113T3ST
(SO-8) MS-012AA RF1K49211 HUF76121SK8 HUF76105SK8 RF1K49157 RF1K49156 HUF76113SK8 HP4410DY HUF76131SK8 HUF76132SK8 ITF86130SK8T
(TSSOP-8) MO-153AA ITF86116SQT
(TSOP-6) MO-193AA ITF87012SVT
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SURFACE MOUNT N-CHANNEL POWER MOSFETs
(Continued)
BVDSS VOLTS
AMPS 16.00 16.00 2.60 3.00 15.00 17.00 20.00 20.00 35.00 49.00 60.00 66.00 75.00 75.00 75.00 75.00 75.00 75.00 100.00 2.50 11.00 12.00 12.00 17.00 20.00 20.00 20.00 20.00 27.00
rDS(ON) OHMS 0.047 0.090 0.070 0.090 0.070 0.026 0.036 0.034 0.025 0.019 0.016 0.007 0.008 0.009 0.010 0.012 0.014 0.008 0.081 0.092 0.150 0.063 0.023 0.032 0.037 0.049 0.035
rDS(ON) OHMS 0.047 0.012 0.094 0.107 0.150 0.071 0.027 0.037 0.043 0.056 0.040
rDS(ON) OHMS 2.5V
(D2-PAK) TO-263AB HUF75321S3S HUF75329S3S HUF75332S3S HUF75333S3S HUF75345S3S HUF75344S3S HUF75343S3S HUF76343S3S HUF75339S3S HUF75337S3S HRF3205S HUF76419S3S
(D-PAK) TO-252AA RFD16N05SM RFD16N05LSM HUF75307D3S HUF75309D3S HUF75329D3S HUF75321D3S HUF76407D3S RFD3055SM RFD3055LESM HUF76409D3S HUF76429D3S HUF76423D3S HUF76419D3S HUF76413D3S
(SOT-223) TO-261AA HUF75307T3ST HUF75309T3ST HUF76409T3S
(SO-8) MS-012AA
(TSSOP-8) MO-153AA
(TSOP-6) MO-193AA
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SURFACE MOUNT N-CHANNEL POWER MOSFETs
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BVDSS VOLTS
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AMPS 33.00 44.00 45.00 50.00 55.00 64.00 70.00 71.00 75.00 75.00 75.00 6.00 75.00 75.00 4.70 4.70 5.50 8.40 10.00 18.00 20.00 22.00 38.00 40.00 40.00 41.00 51.00 56.00 75.00
rDS(ON) OHMS 0.030 0.022 0.028 0.022 0.017 0.014 0.014 0.012 0.0065 0.008 0.010 0.030 0.010 0.014 0.540 0.540 0.039 0.270 0.160 0.085 0.052 0.080 0.035 0.040 0.030 0.025 0.025 0.014
rDS(ON) OHMS 0.035 0.025 0.019 0.017 0.014 0.0075 0.0095 0.165 0.087 0.054 0.036 0.040 0.027
rDS(ON) OHMS 2.5V
(D2-PAK) TO-263AB HUF76423S3S HUF76429S3S RF1S45N06SM RF1S50N06SM HUF76432S3S HUF76437S3S RF1S70N06SM HUF76439S3S HUF76445S3S HUF76443S3S HUFA7510S3S HUF75545S3S HUF75542S3S RF1S22N10SM HUF76633S3S RF1S40N10SM RF1S40N10LESM HUF75637S3S HUF76639S3S HUF75639S3S HUF75645S3S
(D-PAK) TO-252AA IRFR110 IRFU110 IRFR120 HUF76609D3S HUF76619D3S HUF76629D3S
(SOT-223) TO-261AA
(SO-8) MS-012AA HUF75531SK8 HUF75631SK8
(TSSOP-8) MO-153AA
(TSOP-6) MO-193AA
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MOSFET Selection Guide
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SURFACE MOUNT N-CHANNEL POWER MOSFETs
(Continued)
BVDSS VOLTS
AMPS 75.00 3.00 18.00 43.00 4.60 18.00 2.20
rDS(ON) OHMS 0.014 0.095 0.150 0.110 0.042 0.800 0.180 2.000
rDS(ON) OHMS 0.015
rDS(ON) OHMS 2.5V
(D2-PAK) TO-263AB HUF76645S3S HUF75842S3S RF1S640SM
(D-PAK) TO-252AA HUF75823D3S HUF75829D3S IRFR220 IRFR214
(SOT-223) TO-261AA
(SO-8) MS-012AA HUF75831SK8
(TSSOP-8) MO-153AA
(TSOP-6) MO-193AA
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BVDSS VOLTS
AMPS 3.00 9.00 2.10 9.00 10.00 10.00 11.00 60.00 8.00 15.00
rDS(ON) OHMS 0.160 0.016 0.0115 0.027 0.300 0.150
rDS(ON) OHMS 0.115@4.5V 0.015@4.5V 0.150 0.024@4.5V 0.023@4.5V 0.200 0.016@4.5V
rDS(ON) OHMS 2.5V 0.190 0.023
(D2-PAK) TO-263AB
(D-PAK) TO-252AA
(SOT-223) TO-261AA RFT2P03L
(SO-8) MS-012AA ITF87052SVT ITF87068SQT ITF86172SK8T ITF86182SK8T
(TSSOP-8) MO-153AA ITF86174SQT RFD8P05SM RFD15P05SM
(TSOP-6) MO-193AA RF1S60P03SM
RFD10P03LSM
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MOSFET Selection Guide
HERMETIC PACKAGE POWER MOSFETs
BVDSS VOLTS
AMPS 3.50 8.00 3.50 6.00 8.00 2.20 3.50 5.50 1.35 2.50 3.50 1.60 2.75 4.00 6.50 2.50 4.00
rDS(ON) OHMS 0.800 0.180 0.600 0.300 0.180 1.500 0.800 0.400 3.600 1.800 1.000 3.000 1.500 0.600 0.300 1.500 0.800
rDS(ON) OHMS TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF
POLARITY
TO-205AF 2N6790 2N6796 IRFF110 IRFF120 IRFF130 IRFF210 IRFF220 IRFF230 IRFF310 IRFF320 IRFF330 IRFF420 IRFF430 IRFF9120 IRFF9130 IRFF9220 IRFF9230
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IRFP450
Data Sheet July 1999 File Number
2331.3
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor advanced power MOSFET designed, tested, guaranteed withstand specified level energy breakdown avalanche mode operation. these power MOSFETs designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA17435.
Features
14A, 500V rDS(ON) 0.400 Single Pulse Avalanche Energy Rated Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER IRFP450 PACKAGE TO-247 BRAND IRFP450
Symbol
NOTE: When ordering, entire part number.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
DRAIN (TAB)
4-353
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
IRFP450
Absolute Maximum Ratings
25oC, Unless Otherwise Specified IRFP450 1.44 UNITS W/oC
Drain Source Voltage (Note Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current 100oC Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Rating (Note Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) td(ON) td(OFF) Qg(TOT) CISS COSS CRSS Measured from Contact Screw Header Closer Source Gate Pins Center Measured from Source Lead, 6.0mm (0.25in) from Header Source Bonding Modified MOSFET Symbol Showing Internal Device Inductances
TEST CONDITIONS 250µA, (Figure VDS, 250µA Rated BVDSS, Rated BVDSS, 125oC ID(ON) rDS(ON)MAX, ±20V 7.9A, (Figures 50V, 7.9A (Figure 250V, 14A, 10V, 6.1, 17.4 MOSFET Switching Times Essentially Independent Operating Temperature
13.8 2000
±100
UNITS
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note Gate Source Leakage Current Resistance (Note Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate Source Gate Drain) Gate Source Charge Gate Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
10V, 14A, Rated BVDSS IG(REF) 1.5mA (Figure Gate Charge Essentially Independent OperatingTemperature
25V, 1MHz (Figure
Internal Source Inductance
12.5
Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient
Free Operation
0.70
oC/W oC/W
4-354
IRFP450
Source Drain Diode Specifications
PARAMETER Continuous Source Drain Current Pulse Source Drain Current (Note SYMBOL ISDM TEST CONDITIONS Modified MOSFET Symbol Showing Integral Reverse Junction Rectifier
UNITS
Source Drain Diode Voltage (Note Reverse Recovery Time Reverse Recovery Charge NOTES:
25oC, 14A, (Figure 150oC, 13A, dISD/dt 100A/µs 150oC, 13A, dISD/dt 100A/µs
1300
Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited junction temperature. Transient Thermal Impedance curve (Figure 50V, starting 25oC, 7.9mH, peak 14A.
Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
DRAIN CURRENT
CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, THERMAL IMPEDANCE 0.05 0.02 0.01
10-2
SINGLE PULSE
10-3 10-5
NOTES: DUTY FACTOR: t1/t2 PEAK 10-4 10-3 10-2 RECTANGULAR PULSE DURATION
FIGURE MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-355
IRFP450 Typical Performance Curves
OPERATION THIS AREA LIMITED rDS(ON) 10µs 100µs RATED SINGLE PULSE VDS, DRAIN SOURCE VOLTAGE 10ms DRAIN CURRENT
Unless Otherwise Specified
(Continued)
6.0V 5.5V PULSE DURATION 80µs DUTY CYCLE 0.5%
DRAIN CURRENT
5.0V
4.5V 4.0V DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE OUTPUT CHARACTERISTICS
PULSE DURATION 80µs DUTY CYCLE 0.5% DRAIN CURRENT 6.0V 5.5V DRAIN CURRENT(A)
PULSE DURATION 80µs DUTY CYCLE 0.5%
150oC 25oC
5.0V
4.0V VDS, DRAIN SOURCE VOLTAGE 4.5V
10-2 GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
rDS(ON), ON-STATE RESISTANCE rDS(ON), NORMALIZED DRAIN SOURCE RESISTANCE DRAIN CURRENT PULSE DURATION DUTY CYCLE 0.5%
PULSE DURATION 80µs DUTY CYCLE 0.5% 10V, 7.9A
JUNCTION TEMPERATURE (oC)
NOTE: Heating effect minimal. FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
4-356
IRFP450 Typical Performance Curves
rDS(ON), NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 1.25 250µA 1.15 8000
Unless Otherwise Specified
(Continued)
10000 1MHz CISS CRSS COSS
1.05
CAPACITANCE (pF)
6000 CISS 4000 COSS 2000 CRSS
0.95
0.85
0.75
JUNCTION TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
gfs, TRANSCONDUCTANCE
25oC
ISD, SOURCE DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5%
PULSE DURATION 80µs DUTY CYCLE 0.5% SOURCE DRAIN VOLTAGE
150oC
150oC
25oC
DRAIN CURRENT
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE SOURCE DRAIN DIODE VOLTAGE
400V 250V 100V
VGS, GATE SOURCE
GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
4-357
IRFP450 Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY) SAME TYPE Qg(TOT)
BATTERY
0.2µF
0.3µF
IG(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
4-358
IRFP450
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NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
4-359
IRF730
Data Sheet July 1999 File Number
1580.5
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor. advanced power MOSFET designed, tested, guaranteed withstand specified level energy breakdown avalanche mode operation. these power MOSFETs designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA17414.
Features
5.5A, 400V rDS(ON) 1.000 Single Pulse Avalanche Energy Rated Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER IRF730 PACKAGE TO-220AB BRAND IRF730
Symbol
NOTE: When ordering, entire part number.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
4-232
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
IRF730
Absolute Maximum Ratings
25oC, Unless Otherwise Specified IRF730 UNITS W/oC
Drain Source Voltage (Note Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current 100oC Pulsed Drain Current (Note .IDM Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Rating (Note Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) td(ON) td(OFF) Qg(TOT) CISS COSS CRSS Measured From Contact Screw Center Measured From Drain Lead, (0.25in) From Package Center Modified MOSFET Symbol Showing Internal Device Inductances
TEST CONDITIONS 250µA, (Figure VGS, 250µA Rated BVDSS, Rated BVDSS, 125oC ID(ON) rDS(ON)MAX, (Figure ±20V 3.0A, (Figure 10V, 3.3A (Figure 200V, 5.5A, MOSFET Switching Times Essentially Independent Operating Temperature
0.800
±100 1.000
UNITS
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note Gate Source Leakage Current Drain Source Resistance (Note Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate Source Gate Drain) Gate Source Charge Gate Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
10V, 5.5A, Rated BVDSS, Ig(REF) 1.5mA, (Figure Gate Charge Essentially Independent Operating Temperature 25V, 1MHz (Figure
Internal Source Inductance
Measured From Source Lead, (0.25in) From Header Source Bonding
Thermal Resistance Junction Case Thermal Resistance Junction Ambient
Free Operation
1.67
oC/W oC/W
4-233
IRF730
Source Drain Diode Specifications
PARAMETER Continuous Source Drain Current Pulse Source Drain Current (Note SYMBOL ISDM TEST CONDITIONS Modified MOSFET Symbol Showing Integral Reverse Junction Rectifier
UNITS
Source Drain Diode Voltage (Note Reverse Recovery Time Reverse Recovery Charge NOTES:
5.5A, (Figure 25oC, 5.5A, dISD/dt 100A/µs 25oC, 5.5A, dISD/dt 100A/µs
0.93
Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure 50V, starting 25oC, 17mH, peak 5.5A.
Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
DRAIN CURRENT
CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W)
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
0.05 0.02 0.01 SINGLE PULSE NOTES: DUTY FACTOR: t1/t2 PEAK 10-1 10-3 10-2 RECTANGULAR PULSE DURATION
0.01 10-5
10-4
FIGURE MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-234
IRF730 Typical Performance Curves
OPERATION THIS AREA LIMITED rDS(ON) DRAIN CURRENT 10µs 100µs DRAIN CURRENT
Unless Otherwise Specified (Continued)
6.0V PULSE DURATION 80µs DUTY CYCLE 0.5%
5.5V
10ms 25oC RATED SINGLE PULSE VDS, DRAIN SOURCE VOLTAGE
5.0V 4.5V 4.0V VDS, DRAIN SOURCE VOLTAGE
1000
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE OUTPUT CHARACTERISTICS
PULSE DURATION 80µs DUTY CYCLE 0.5% DRAIN CURRENT IDR, DRAIN CURRENT 6.0V
150oC 25oC
5.5V 5.0V 4.5V 4.0V VDS, DRAIN SOURCE VOLTAGE
PULSE DURATION 80µs DUTY CYCLE 0.5% 0.01 VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% rDS(ON), DRAIN SOURCE RESISTANCE
FIGURE TRANSFER CHARACTERISTICS
PULSE DURATION 80µs DUTY CYCLE 0.5% 10V, 5.5A
DRAIN CURRENT
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
4-235
IRF730 Typical Performance Curves
1.25 250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 1.15 1200 CISS
Unless Otherwise Specified (Continued)
1500 1MHz CISS CRSS COSS
1.05
CAPACITANCE (pF)
0.95
COSS
0.85
CRSS
0.75
JUNCTION TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
ISD, SOURCE DRAIN CURRENT gfs, TRANSCONDUCTANCE PULSE DURATION 80µs DUTY CYCLE 0.5%
PULSE DURATION 80µs DUTY CYCLE 0.5%
25oC
150oC
150oC
25oC
DRAIN CURRENT
VSD, SOURCE DRAIN VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE SOURCE DRAIN DIODE VOLTAGE
VGS, GATE SOURCE VOLTAGE
5.5A
320V 200V
GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
4-236
IRF730 Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY) SAME TYPE Qg(TOT)
BATTERY
0.2µF
0.3µF
Ig(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
4-237
IRF730
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
4-238
THRU HOLE CHANNEL POWER MOSFETs
BVDSS VOLTS
1-888-INTERSIL 321-724-7143
AMPS 10.00 10.00 60.00 60.00 8.00 8.00 15.00 15.00 30.00 30.00 30.00 30.00 12.00 1.00 3.00 6.00 8.00 12.00 19.00 3.50 11.00
rDS(ON) OHMS 0.027 0.027 0.300 0.300 0.150 0.150 0.030 0.065 0.030 0.065 0.300 0.600 1.200 0.600 0.400 0.300 0.200 1.500 0.500
rDS(ON) OHMS 0.200 0.200
TO-247 RFG60P03 RFG60P05E RFG60P06E
TO-220AB RFP10P03L RFP60P03 RFP8P05 RFP15P05 RFP30P05 RFP30P06 RFP12P08 IRF9510 IRF9520 RFP8P10 IRF9530 IRF9540 IRF9620 IRF9640
(I-PAK) TO-251AA RFD10P03L RFD8P05 RFD15P05
(HEXDIP) 4-PINDIP IRFD9120
5-1|
Copyright
MOSFET Selection Guide
Intersil Corporation 2000
IRF9620
Data Sheet July 1999 File Number
2283.2
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor advanced power MOSFET designed, tested guaranteed withstand specified level energy breakdown avalanche mode operation. these power MOSFETs designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA17502.
Features
3.5A, 200V rDS(ON) 1.500 Single Pulse Avalanche Energy Rated Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance
Symbol
Ordering Information
PART NUMBER IRF9620 PACKAGE TO-220AB BRAND IRF9620
NOTE: When ordering, entire part number.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
IRF9640, RF1S9640SM
Data Sheet July 1999 File Number
2284.2
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
These P-Channel enhancement mode silicon-gate power field-effect transistors. They advanced power MOSFETs designed, tested, guaranteed withstand specified level energy breakdown avalanche mode operation. these power MOSFETs designed applications such switching regulators, switching converters, motor drivers, relay drivers drivers other high-power switching devices. high input impedance allows these types operated directly from integrated circuits. Formerly developmental type TA17522.
Features
11A, 200V rDS(ON) 0.500 Single Pulse Avalanche Energy Rated Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature TB334, "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER IRF9640 RF1S9640SM PACKAGE TO-220AB TO-263AB BRAND IRF9640 RF1S9640
Symbol
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, i.e., RF1S9640SM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE
JEDEC TO-263AB
DRAIN (FLANGE)
4-33
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
IRF9640, RF1S9640SM
Absolute Maximum Ratings
25oC, Unless Otherwise Specified IRF9640, RF1S9640SM -200 -200 UNITS W/oC
Drain Source Breakdown Voltage (Note .VDS Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current 100oC Pulsed Drain Current (Note Gate Source Voltage .VGS Maximum Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Rating (Note .EAS Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC
Electrical Specifications
PARAMETER Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note Gate Source Leakage Current
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) td(ON) td(OFF) Qg(TOT) CISS COSS CRSS Measured From Contact Screw Center Measured From Drain Lead, (0.25in) from Package Center Modified MOSFET Symbol Showing Internal Devices Inductances
TEST CONDITIONS -250µA, (Figure VDS, -250µA Rated BVDSS, Rated BVDSS, 125oC ID(ON) rDS(ON)MAX, -10V ±20V -6A, -10V (Figures ID(ON) rDS(ON)MAX, (Figure Rated BVDSS, -11A, -10V (Figures VDSS -100V VDSS -75V MOSFET Switching Times Essentially Independent Operating Temperature -10V, -11A, Rated BVDSS Ig(REF) -1.5mA (Figures Gate Charge Essentially Independent Operating Temperature -25V, 1MHz (Figure
-200
0.350 1100
±100 0.500
UNITS
Drain Source Resistance (Note Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate Source Gate Drain) Gate Source Charge Gate Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
Internal Source Inductance
Measured From Source Lead, (0.25in) from Header Source Bonding
Thermal Resistance Junction Case Thermal Resistance Junction Ambient
Typical Socket Mount
62.5
oC/W oC/W
4-34
IRF9640, RF1S9640SM
Source Drain Diode Specifications
PARAMETER Continuous Source Drain Current Pulse Source Drain Current (Note SYMBOL ISDM TEST CONDITIONS Modified MOSFET Symbol Showing Integral Reverse Junction Diode
UNITS
Source Drain Diode Voltage (Note Reverse Recovery Time Reverse Recovery Charge NOTES:
25oC, -11A, (Figure 150oC, -11A, dISD/dt 100A/µs 150oC, -11A, dISD/dt 100A/µs
-1.5
Pulse Test: Pulse width 300µs, duty cycle Repetitive Rating: Pulse width limited junction temperature. Transient Thermal Impedance curve (Figure 50V, starting 25oC, 9.8mH, peak 11A. Figures
Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
DRAIN CURRENT
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE
0.05 0.02 0.01 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION NOTES: DUTY FACTOR: t1/t2 PEAK
0.01 10-5
FIGURE MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-35
IRF9640, RF1S9640SM Typical Performance Curves
-100
Unless Otherwise Specified (Continued)
-11V
-10V PULSE DURATION 80µs DUTY CYCLE 0.5%
DRAIN CURRENT
100µs 10ms 100ms
DRAIN CURRENT
10µs
25oC
OPERATION THIS AREA LIMITED rDS(ON) RATED SINGLE PULSE
-0.1
-1000 VDS, DRAIN SOURCE VOLTAGE
-100 VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE OUTPUT CHARACTERISTICS
DRAIN CURRENT
DRAIN CURRENT
PULSE DURATION 80µs -10V DUTY CYCLE 0.5%
D(ON) rDS(ON) PULSE DURATION 80µs DUTY CYCLE 0.5%
125oC -1.0 25oC -55oC
VDS, DRAIN SOURCE VOLTAGE
-0.1 VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
rDS(ON), DRAIN SOURCE RESISTANCE
PULSE TEST NORMALIZED DRAIN SOURCE RESISTANCE
-10V, PULSE DURATION 80µs DUTY CYCLE 0.5%
-10V DRAIN CURRENT
JUNCTION TEMPERATURE (oC)
NOTE:
Heating effect pulse minimal. FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
4-36
IRF9640, RF1S9640SM Typical Performance Curves
1.15 NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 250µA 1.10 1.05 1.00 0.95 0.90 0.85 CAPACITANCE (pF) 1600
Unless Otherwise Specified (Continued)
2000 1MHz CISS CRSS COSS CISS
1200
COSS CRSS
JUNCTION TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
-100 PULSE DURATION 80µs DUTY CYCLE 0.5% -55oC 25oC 125oC ISD, DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 150oC
gfs, TRANSCONDUCTANCE
25oC -1.0
-0.1 -0.4 -0.6 DRAIN CURRENT -0.8 -1.4 -1.0 -1.2 -1.6 VSD, SOURCE DRAIN VOLTAGE -1.8
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE SOURCE DRAIN DIODE VOLTAGE
-11A
VGS, GATE SOURCE
-40V -100V -160V
Qg(TOT), Total GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
4-37
IRF9640, RF1S9640SM Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
BVDSS
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
-VDS (ISOLATED SUPPLY)
BATTERY 0.2µF 0.3µF Ig(REF) CURRENT SAMPLING RESISTOR +VDS CURRENT SAMPLING RESISTOR
Qg(TOT)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
4-38
IRF9640, RF1S9640SM
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
4-39
IRF9620
Absolute Maximum Ratings
25oC, Unless Otherwise Specified IRF9620 -200 -200 -3.5 0.32 UNITS W/oC
Drain Source Breakdown Voltage (Note Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current 100oC Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation (Figure Linear Derating Factor (Figure Single Pulse Avalanche Energy Rating (Note Operating Storage Temperature .TJ, TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) td(ON) td(OFF) Qg(TOT) CISS COSS CRSS Measured From Contact Screw Center Measured From Drain Lead, (0.25in) from Package Center Modified MOSFET Symbol Showing Internal Devices Inductances
TEST CONDITIONS -250µA, (Figure VDS, -250µA Rated BVDSS, Rated BVDSS, =125oC ID(ON) rDS(ON)MAX, -10V ±20V -1.5A, -10V, (Figures ID(ON) rDS(ON)MAX, -1.5A, (Figure Rated BVDSS, -3.5A, BVDSS 200V BVDSS 150V (Figures MOSFET Switching Times Essentially Independent Operating Temperature -10V, -3.5A, Rated BVDSS, IG(REF) 1.5mA, (Figures Gate Charge Essentially Independent Operating Temperature -25V, 1MHz, (Figure
-200 -3.5
1.000
-250 ±100 1.500
UNITS
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note Gate Source Leakage Current Drain Source Resistance (Note Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate Source Gate Drain) Gate Source Charge Gate Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
Internal Source Inductance
Measured From Source Lead, (0.25in) from Header Source Bonding
Thermal Resistance Junction Case Thermal Resistance Junction Ambient
Typical Socket Mount
3.12
oC/W oC/W
4-22
IRF9620
Source Drain Diode Specifications
PARAMETER Continuous Source Drain Current Pulse Source Drain Current (Note SYMBOL ISDM TEST CONDITIONS Modified MOSFET Symbol Showing Integral Reverse Junction Diode
-3.5
UNITS
Source Drain Diode Voltage (Note Reverse Recovery Time Reverse Recovery Charge NOTES:
25oC, -3.5A, (Figure 150oC, -3.5A, dISD/dt 100A/µs 150oC, -3.5A, dISD/dt 100A/µs
-1.5
Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure 50V, starting 25oC, 35.5mH, peak 3.5A (Figures 16).
Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
DRAIN CURRENT
CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED THERMAL IMPEDANCE
0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-2 10-1 RECTANGULAR PULSE DURATION
10-4
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-23
IRF9620 Typical Performance Curves
-100 OPERATION THIS AREA LIMITED rDS(ON) 10µs 100µs
Unless Otherwise Specified (Continued)
-10V
DRAIN CURRENT
DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5%
25oC RATED SINGLE PULSE -100 VDS, DRAIN SOURCE VOLTAGE 10ms 100ms -1000
-0.1
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE OUTPUT CHARACTERISTICS
ID(ON), STATE DRAIN CURRENT PULSE DURATION 80µs DUTY CYCLE 0.5% DRAIN CURRENT
D(ON) rDS(ON)
-10V VDS, DRAIN SOURCE VOLTAGE
PULSE DURATION 80µs DUTY CYCLE 0.5% 125oC 25oC -55oC
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
PULSE DURATION RESISTANCE NORMALIZED DRAIN SOURCE RESISTANCE rDS(ON), DRAIN SOURCE
FIGURE TRANSFER CHARACTERISTICS
-10V, -1.5A PULSE DURATION 80µs DUTY CYCLE 0.5%
-10V
DRAIN CURRENT
JUNCTION TEMPERATURE (oC)
NOTE: Heating effect pulse minimal. FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
4-24
IRF9620 Typical Performance Curves
1.25 250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 1.15 CAPACITANCE (pF)
Unless Otherwise Specified (Continued)
1MHz CISS CRSS COSS CISS
1.05
0.95
COSS CRSS
0.85
0.75
JUNCTION TEMPERATURE (oC)
VDS, DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
ISD, SOURCE DRAIN CURRENT gfs, TRANSCONDUCTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% -55oC 25oC 125oC
-100
PULSE DURATION 80µs DUTY CYCLE 0.5%
150oC
-1.0
25oC
DRAIN CURRENT
-0.1 -0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
VSD, SOURCE DRAIN VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE SOURCE DRAIN DIODE VOLTAGE
-3.5A VGS, GATE SOURCE
-60V -40V
-100V
Qg(TOT) TOTAL GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
4-25
IRF9620 Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
BVDSS
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
-VDS (ISOLATED SUPPLY)
BATTERY
0.2µF
0.3µF Qg(TOT)
IG(REF) CURRENT SAMPLING RESISTOR +VDS CURRENT SAMPLING RESISTOR
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
4-26
IRF9620
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
4-27
SURFACE MOUNT N-CHANNEL POWER MOSFETs
BVDSS VOLTS
AMPS 6.30 6.00 4.00 4.30 5.50 6.30 6.30 6.50 10.00 10.00 10.00 11.50 14.00 16.00 20.00 20.00 20.00 20.00 20.00 47.00 56.00 70.00 75.00 75.00 75.00 75.00 75.00 14.00 14.00
rDS(ON) OHMS 0.023 0.031 0.050 0.030 0.030 0.012 0.0135 0.018 0.0115 0.0078 0.016 0.019 0.023 0.025 0.052 0.021 0.016 0.010 0.0045 0.0055 0.0075 0.011 0.009 0.100
rDS(ON) OHMS 0.020 0.035@4.5V 0.028 0.038 0.050 0.060@4.5V 0.030 0.038 0.016@4.5V 0.020 0.017 0.015 0.010@4.5V 0.022 0.021 0.024@4.5V 0.030 0.080 0.028 0.021 0.0058 0.0075 0.010 0.016 0.0125 0.100
rDS(ON) OHMS 2.7V 0.045@2.5V
TO-263AB HUF76121S3S HUF76129S3S RF1S70N03SM HUF76145S3S HUF76143S3S HUF76139S3S HUF76132S3S HUF76137S3S
TO-252AA RFD16N03LSM HUF76129D3S HPLR3103 HUF76121D3S RFD20N03SM HUF76107D3S RFD14N05SM RFD14N05LSM
SOT-223 HUF76113T3ST
MS-012AA RF1K49211 HUF76121SK8 HUF76105SK8 RF1K49157 RF1K49156 HUF76113SK8 HP4410DY HUF76131SK8 HUF76132SK8 ITF86130SK8T
TSSOP8 ITF86116SQT
TSOP6 ITF87012SVT
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SURFACE MOUNT N-CHANNEL POWER MOSFETs
(Continued)
BVDSS VOLTS
AMPS 15.00 16.00 16.00 2.60 3.00 15.00 17.00 20.00 20.00 35.00 49.00 60.00 66.00 75.00 75.00 75.00 75.00 75.00 75.00 100.00 2.50 11.00 12.00 12.00 17.00 20.00 20.00 20.00 20.00
rDS(ON) OHMS 0.047 0.090 0.070 0.090 0.070 0.026 0.036 0.034 0.025 0.019 0.016 0.007 0.008 0.009 0.010 0.012 0.014 0.008 0.081 0.092 0.150 0.063 0.023 0.032 0.037 0.049
rDS(ON) OHMS 0.065 0.047 0.012 0.094 0.107 0.150 0.071 0.027 0.037 0.043 0.056
rDS(ON) OHMS 2.7V
TO-263AB HUF75321S3S HUF75329S3S HUF75332S3S HUF75333S3S HUF75345S3S HUF75344S3S HUF75343S3S HUF76343S3S HUF75339S3S HUF75337S3S HRF3205S
TO-252AA RFD15N06LESM RFD16N05SM RFD16N05LSM HUF75307D3S HUF75309D3S HUF75329D3S HUF75321D3S HUF76407D3S RFD3055SM RFD3055LESM HUF76409D3S HUF76429D3S HUF76423D3S HUF76419D3S HUF76413D3S
SOT-223 HUF75307T3ST HUF75309T3ST HUF76409T3S
MS-012AA
TSSOP8
TSOP6
5-13
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MOSFET Selection Guide
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Intersil Corporation 2000
SURFACE MOUNT N-CHANNEL POWER MOSFETs
(Continued)
BVDSS VOLTS
AMPS 27.00 33.00 44.00 45.00 50.00 55.00 64.00 70.00 71.00 75.00 75.00 75.00 6.00 75.00 75.00 4.70 4.70 5.50 8.40 18.00 20.00 22.00 38.00 40.00 40.00 41.00 51.00 56.00 75.00
rDS(ON) OHMS 0.035 0.030 0.022 0.028 0.022 0.017 0.014 0.014 0.012 0.0065 0.008 0.010 0.030 0.010 0.014 0.540 0.540 0.039 0.270 0.085 0.052 0.080 0.035 0.040 0.030 0.025 0.025 0.014
rDS(ON) OHMS 0.040 0.035 0.025 0.019 0.017 0.014 0.0075 0.0095 0.087 0.054 0.036 0.040 0.027
rDS(ON) OHMS 2.7V
TO-263AB HUF76419S3S HUF76423S3S HUF76429S3S RF1S45N06SM RF1S50N06SM HUF76432S3S HUF76437S3S RF1S70N06SM HUF76439S3S HUF76445S3S HUF76443S3S HUFA7510S3S HUF75545S3S HUF75542S3S RF1S22N10SM HUF76633S3S RF1S40N10SM RF1S40N10LESM HUF75637S3S HUF76639S3S HUF75639S3S HUF75645S3S
TO-252AA IRFR110 IRFU110 IRFR120 HUF76619D3S HUF76629D3S
SOT-223
MS-012AA HUF75531SK8 HUF75631SK8
TSSOP8
TSOP6
5-14
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MOSFET Selection Guide
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Intersil Corporation 2000
SURFACE MOUNT N-CHANNEL POWER MOSFETs
(Continued)
BVDSS VOLTS
AMPS 75.00 3.00 18.00 43.00 4.60 18.00 2.20
rDS(ON) OHMS 0.014 0.095 0.110 0.042 0.800 0.180 2.000
rDS(ON) OHMS 0.015
rDS(ON) OHMS 2.7V
TO-263AB HUF76645S3S HUF75842S3S RF1S640SM
TO-252AA HUF75829D3S IRFR220 IRFR214
SOT-223
MS-012AA HUF75831SK8
TSSOP8
TSOP6
5-15
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MOSFET Selection Guide
SURFACE MOUNT P-CHANNEL POWER MOSFETs
BVDSS VOLTS
AMPS 3.00 9.00 2.10 9.00 10.00 10.00 11.00 60.00 8.00 15.00
rDS(ON) OHMS 0.160 0.016 0.0115 0.027 0.300 0.150
rDS(ON) OHMS 0.115@4.5V 0.015@4.5V 0.150 0.024@4.5V 0.023@4.5V 0.200 0.016@4.5V
rDS(ON) OHMS 2.7V 0.190@2.5V 0.023@2.5V
TO-263AB ITF86182SK8T
TO-252AA ITF86174SQT ITF86172SK8T RFD10P03LSM
SOT-223 RFT2P03L
MS-012AA ITF87052SVT ITF87068SQT
TSSOP8 RFD8P05SM RFD15P05SM
TSOP6 RF1S60P03SM
Copyright
Intersil Corporation 2000
MOSFET Selection Guide
HERMETIC PACKAGE POWER MOSFETs
BVDSS VOLTS
AMPS 2.25 3.50 8.00 5.50 3.50 6.00 8.00 2.20 3.50 5.50 1.35 2.50 3.50 1.60 2.75 4.00 6.50 2.50 4.00
rDS(ON) OHMS 1.500 0.800 0.180 0.400 0.600 0.300 0.180 1.500 0.800 0.400 3.600 1.800 1.000 3.000 1.500 0.600 0.300 1.500 0.800
rDS(ON) OHMS TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF TO-205AF
POLARITY
TO-205AF 2N6784 2N6790 2N6796 2N6798 IRFF110 IRFF120 IRFF130 IRFF210 IRFF220 IRFF230 IRFF310 IRFF320 IRFF330 IRFF420 IRFF430 IRFF9120 IRFF9130 IRFF9220 IRFF9230
INTELLIGENT DISCRETE POWER MOSFETs
BVDSS VOLTS
AMPS 0.30 0.30 1.00 1.00
rDS(ON) OHMS 6.000 6.000 0.750 0.750
TO-220AB
(I-PAK) TO-251AA RLD03N06CLE
RLP03N06CLE RLP1N06CLE RLP1N08LE
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Intersil Corporation 2000
RF1K49090
Data Sheet August 1999 File Number
3985.6
3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFETPower MOSFET
This Dual N-Channel power MOSFET manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers, voltage switches. This product achieves full rated conduction gate bias range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49090.
Features
3.5A, rDS(ON) 0.050 Temperature Compensating PSPICE® Model On-Resistance Gate Drive Voltage Curves Peak Current Pulse Width Curve Rating Curve Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
BRAND RF1K49090
S1(1) G1(2) D1(8) D1(7)
Ordering Information
PART NUMBER RF1K49090 PACKAGE MS-012AA
NOTE: When ordering, entire part number. ordering tape reel, suffix part number, i.e., RF1K4909096.
D2(6) D2(5)
S2(3) G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
8-10
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. LittleFETis trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RF1K49093
Data Sheet August 1999 File Number
3969.5
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFETPower MOSFET
This Dual P-Channel power MOSFET manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers, voltage switches. This product achieves full rated conduction gate bias range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49093.
Features
2.5A, rDS(ON) 0.130 Temperature Compensating PSPICE® Model On-Resistance Gate Drive Voltage Curves Peak Current Pulse Width Curve Rating Curve Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
BRAND RF1K49093
Ordering Information
PART NUMBER RF1K49093 PACKAGE MS-012AA
NOTE: When ordering, entire part number. ordering tape reel, suffix part number, i.e., RF1K4909396.
Packaging
JEDEC MS-012AA
BRANDING DASH
8-152
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. LittleFETis trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
HUF76407DK8
Data Sheet October 1999 File Number 4712.4
3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC MS-012AA
BRANDING DASH
Features
Ultra On-Resistance rDS(ON) 0.090, rDS(ON) 0.105, Simulation Models Temperature Compensated PSPICE® SABER© Electrical Models Spice SABER Thermal Impedance Models www.semi.Intersil.com Peak Current Pulse Width Curve
Symbol
SOURCE1 GATE1 DRAIN DRAIN
Rating Curve Transient Thermal Impedance Curve Board Mounting Area Switching Time Curves
Ordering Information
SOURCE2 GATE2 DRAIN DRAIN
PART NUMBER HUF76407DK8
PACKAGE MS-012AA
BRAND 76407DK8
NOTE: When ordering, entire part number. suffix obtain variant tape reel, e.g., HUF76407DK8T.
Absolute Maximum Ratings
25oC, Unless Otherwise Specified HUF76407DK8 Figure Figures UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous (TA= 25oC, (Note Continuous (TA= 25oC, 10V) (Figure (Note Continuous (TA= 100oC, (Note Continuous (TA= 100oC, 4.5V) (Figure (Note Pulsed Drain Current .IDM Pulsed Avalanche Rating .UIS Power Dissipation (Note Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief TB334 Tpkg NOTES: 25oC 125oC. 50oC/W measured using FR-4 board with 0.76 (490.3 mm2) copper second. 228oC/W measured using FR-4 board with 0.006 (3.87 mm2) copper 1000 seconds.
mW/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. UltraFETis trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. SABER Copyright Analogy, Inc. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
HUF76407DK8
Electrical Specifications
PARAMETER STATE SPECIFICATIONS Drain Source Breakdown Voltage BVDSS IDSS IGSS VGS(TH) rDS(ON) 250µA, (Figure 250µA, -40oC (Figure Zero Gate Voltage Drain Current 55V, 50V, 150oC Gate Source Leakage Current STATE SPECIFICATIONS Gate Source Threshold Voltage Drain Source Resistance VDS, 250µA (Figure 3.8A, (Figures 1.0A, (Figure 1.0A, 4.5V (Figure THERMAL SPECIFICATIONS Thermal Resistance Junction Ambient Area 0.76 (490.3 mm2) (Note Area 0.027 (17.4 mm2) (Figure Area 0.006 (3.87 mm2) (Figure SWITCHING SPECIFICATIONS (VGS 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time td(ON) td(OFF) tOFF td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS 25V, 1MHz (Figure 30V, 1.0A, Ig(REF) 1.0mA (Figures 30V, 3.8A 10V, (Figures 30V, 1.0A 4.5V, (Figures
oC/W oC/W oC/W
25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS UNITS
±100 0.090 0.105 0.110
±16V
0.075 0.088 0.092
SWITCHING SPECIFICATIONS (VGS 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge Threshold Gate Charge Gate Source Gate Charge Reverse Transfer Capacitance CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance 0.42 1.05 11.2
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage SYMBOL 3.8A 1.0A Reverse Recovery Time Reverse Recovered Charge 1.0A, dISD/dt 100A/µs 1.0A, dISD/dt 100A/µs TEST CONDITIONS 1.25 1.00 UNITS
HUF76407DK8 Typical Performance Curves
POWER DISSIPATION MULTIPLIER AMBIENT TEMPERATURE (oC)
10V, 50oC/W
DRAIN CURRENT
4.5V, 228oC/W AMBIENT TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION AMBIENT TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT AMBIENT TEMPERATURE
THERMAL IMPEDANCE ZJA, NORMALIZED DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01 NOTES: DUTY FACTOR: t1/t2 PEAK 10-2 10-1 228oC/W
SINGLE PULSE 0.001 10-5 10-4 10-3 RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
IDM, PEAK CURRENT
228oC/W
25oC TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-4 10-3 10-2 10-1 PULSE WIDTH
10-5
FIGURE PEAK CURRENT CAPABILITY
HUF76407DK8 Typical Performance Curves
228oC/W DRAIN CURRENT
(Continued)
IAS, AVALANCHE CURRENT
SINGLE PULSE RATED 25oC
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD) STARTING 25oC STARTING 150oC
OPERATION THIS AREA LIMITED rDS(ON)
100µs
10ms
VDS, DRAIN SOURCE VOLTAGE
0.01
tAV, TIME AVALANCHE (ms)
NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE FORWARD BIAS SAFE OPERATING AREA FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
PULSE DURATION 80µs DUTY CYCLE 0.5% -55oC
DRAIN CURRENT 3.5V PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC 4.5V
DRAIN CURRENT
25oC
150oC
VGS, GATE SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE SATURATION CHARACTERISTICS
rDS(ON), DRAIN SOURCE RESISTANCE
3.8A
NORMALIZED DRAIN SOURCE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
PULSE DURATION 80µs DUTY CYCLE 0.5%
10V, 3.8A
VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
HUF76407DK8 Typical Performance Curves
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
(Continued)
VDS, 250µA
NORMALIZED GATE THRESHOLD VOLTAGE
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
1000 CISS
GATE SOURCE VOLTAGE
CAPACITANCE (pF)
COSS
WAVEFORMS DESCENDING ORDER: 3.8A 1.0A GATE CHARGE (nC)
1MHz
CRSS
DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE GATE CHARGE WAVEFORMS CONSTANT GATE CURRENT
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
4.5V, 30V, 1.0A
10V, 30V, 3.8A td(OFF)
SWITCHING TIME (ns)
SWITCHING TIME (ns)
td(OFF)
td(ON)
td(ON)
RGS, GATE SOURCE RESISTANCE
RGS, GATE SOURCE RESISTANCE
FIGURE SWITCHING TIME GATE RESISTANCE
FIGURE SWITCHING TIME GATE RESISTANCE
HUF76407DK8 Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
Qg(TOT)
Qg(5) Qg(TH) Ig(REF)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE SWITCHING TIME WAVEFORM
HUF76407DK8 Thermal Resistance Mounting Area
maximum rated junction temperature, TJM, thermal resistance heat dissipating path determines maximum allowable device power dissipation, PDM, application. Therefore application's ambient temperature, (oC), thermal resistance (oC/W) must reviewed ensure that never exceeded. Equation mathematically represents relationship serves basis establishing rating part.
103.2 24.3
ln(AREA)
oC/W 0.006in2 oC/W 0.027in2
(oC/W)
(EQ.
46.4 21.7 ln(AREA)
0.001 0.01 AREA, COPPER AREA (in2)
using surface mount devices such SOP-8 package, environment which applied will have significant influence part's current maximum power dissipation ratings. Precise determination complex influenced many factors: Mounting area onto which device attached whether there copper side both sides board. number copper layers thickness board. external heat sinks. thermal vias. flow board orientation. steady state applications, pulse width, duty cycle transient thermal response part, board environment they Intersil provides thermal information assist designer's preliminary application evaluation. Figure defines device function copper (component side) area. This horizontally positioned FR-4 board with copper after 1000 seconds steady state power with flow. This graph provides necessary information calculation steady state junction temperature power dissipation. Pulse applications evaluated using Intersil device Spice thermal model manually utilizing normalized maximum transient thermal impedance curve. Displayed curve values listed Electrical Specifications table. points were chosen depict compromise between copper board area, thermal resistance ultimately power dissipation, PDM. Thermal resistances corresponding other copper areas obtained from Figure calculation using Equation defined natural area times cofficient added constant. area, square inches copper area including gate source pads.
103.2 24.3
FIGURE THERMAL RESISTANCE MOUNTING AREA
While Equation describes thermal resistance single die, several UltraFETTMs offered with SOP-8 package. dual SOP-8 package introduces additional thermal component, thermal coupling resistance, Equation describes function copper mounting area.
46.4 21.7
Area
(EQ.
thermal coupling resistance copper area also graphically depicted Figure important note thermal resistance (RJA) thermal coupling resistance equivalent both die. example square inches copper: RJA1 RJA2 159°C/W
97°C/W
define junction temerature respective die. Similarly, define power dissipated each die. steady state junction temperature calculated using Equation 1and Equation Example: calculate junction temperature each when dissipating Watts dissipating Watts. ambient temperature 70°C package mounted copper area square inches die. Equation calulate Equation calulate TJ2.
(EQ.
Watts)(159°C/W) (0.5 Watts)(97°C/W) 70°C 119°C
(EQ.
Area
(0.5 Watts)(159°C/W) Watts)(97°C/W) 70°C 150°C
(EQ.
HUF76407DK8
transient thermal impedance (ZJA) also effected varied copper board area. Figure shows effect copper area single pulse transient thermal impedance. Each trace represents copper area square inches corresponding descending list graph. Spice SABER thermal models provided each listed areas. Copper area perceivable effect transient thermal impedance pulse widths less than 100ms. pulse widths less than 100ms transient thermal impedance determined package. Therefore, CTHERM1 through CTHERM5 RTHERM1 through RTHERM5 remain constant each thermal models. listing model component values available Table
IMPEDANCE (oC/W)
ZJA, THERMAL
COPPER BOARD AREA DESCENDING ORDER 0.020 0.140 0.257 0.380 0.493
10-1 RECTANGULAR PULSE DURATION
FIGURE THERMAL RESISTANCE MOUNTING AREA
HUF76407DK8 PSPICE Electrical Model
.SUBCKT HUF76407DK8
4.55e-10 5.20e-10 3.11e-10 DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD
1999
LDRAIN DPLCAP RLDRAIN DBREAK EBREAK DRAIN RSLC1 ESLC
RSLC2
LGATE GATE RLGATE EVTEMP RGATE EVTHRES
LDRAIN 1.0e-9 LGATE 1.5e-9 LSOURCE 4.86e-10 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD RBREAK RBREAKMOD RDRAIN RDRAINMOD 3.00e-2 RGATE 3.37 RLDRAIN RLGATE RLSOURCE 4.86 RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 3.80e-2 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD
MSTRO LSOURCE RSOURCE RLSOURCE SOURCE
VBAT ESLC .MODEL DBODYMOD 3.17e-13 2.21e-2 TRS1 6.25e-4 TRS2 -1.11e-6 6.82e-10 7.98e-8 0.65) .MODEL DBREAKMOD 3.36e-1 TRS1 1.25e-4 TRS2 1.34e-6) .MODEL DPLCAPMOD (CJO 2.91e-10 1e-30 0.85) .MODEL MMEDMOD NMOS (VTO 2.00 1e-30 3.37) .MODEL MSTROMOD NMOS (VTO 2.33 1e-30 .MODEL MWEAKMOD NMOS (VTO 1.71 0.02 1e-30 33.7 0.1) .MODEL RBREAKMOD (TC1 1.06e-3 .MODEL RDRAINMOD (TC1 1.23e-2 2.58e-5) .MODEL RSLCMOD (TC1 1.0e-3 1.0e-6) .MODEL RSOURCEMOD (TC1 .MODEL RVTHRESMOD (TC1 -2.19e-3 -4.97e-6) .MODEL RVTEMPMOD (TC1 -1.11e-3 .MODEL S1AMOD VSWITCH (RON 1e-5 .MODEL S1BMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .MODEL S2BMOD VSWITCH (RON 1e-5 .ENDS ROFF ROFF ROFF ROFF -7.0 VOFF= -2.5) -2.5 VOFF= -7.0) -1.0 VOFF= VOFF= -1.0)
NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley.
EBREAK 67.8 EVTHRES EVTEMP
RDRAIN
DBODY
MWEAK MMED
RBREAK RVTEMP
VBAT
RVTHRES
HUF76407DK8 SABER Electrical Model
28May 1999 template huf76407dk8 n2,n1,n3 electrical n2,n1,n3 iscl d.model dbodymod 3.17e-13, 6.82e-10, 7.98e-8, 0.65) d.model dbreakmod d.model dplcapmod (cjo 2.91e-10, 1e-30, 0.85) m.model mmedmod (type=_n, 2.00, 1e-30, m.model mstrongmod (type=_n, 2.33, 1e-30, m.model mweakmod (type=_n, 1.71, 0.02, 1e-30, sw_vcsp.model s1amod (ron 1e-5, roff 0.1, voff -2.5) sw_vcsp.model s1bmod (ron =1e-5, roff 0.1, -2.5, voff sw_vcsp.model s2amod (ron 1e-5, roff 0.1, -1.0, voff sw_vcsp.model s2bmod (ron 1e-5, roff 0.1, voff c.ca 4.55e-10 c.cb 5.20e-10 c.cin 3.11e-10 d.dbody model=dbodymod d.dbreak model=dbreakmod d.dplcap model=dplcapmod i.it l.ldrain 1e-9 l.lgate 1.5e-9 l.lsource 4.86e-10
GATE RLGATE LGATE
LDRAIN DPLCAP RSLC1 RSLC2 ISCL RLDRAIN RDBREAK DBREAK MWEAK MMED MSTRO EBREAK RDBODY DRAIN
EVTEMP RGATE EVTHRES
RDRAIN
DBODY
LSOURCE RLSOURCE
m.mmed model=mmedmod, l=1u, w=1u m.mstrong model=mstrongmod, l=1u, w=1u m.mweak model=mweakmod, l=1u, w=1u
SOURCE
RSOURCE RBREAK RVTEMP
res.rbreak 1.06e-3, res.rdbody 2.21e-2, -6.25e-4, -1.11e-6 res.rdbreak 3.36e-1, 1.25e-4, 1.34e-6 res.rdrain 3.00e-2, 1.23e-2, 2.58e-5 res.rgate 3.37 res.rldrain res.rlgate res.rlsource 4.86 res.rslc1 1e-6, 1e-3, 1e-6 res.rslc2 res.rsource 3.80e-2, res.rvtemp -1.11e-3, res.rvthres -2.19e-3, -4.97e-6 spe.ebreak 67.8 spe.eds spe.egs spe.esg spe.evtemp spe.evthres sw_vcsp.s1a model=s1amod sw_vcsp.s1b model=s1bmod sw_vcsp.s2a model=s2amod sw_vcsp.s2b model=s2bmod v.vbat
VBAT
RVTHRES
equations (n51->n50) +=iscl iscl: v(n51,n50)
HUF76407DK8 SPICE Thermal Model
1June 1999 HUF76407DK8 Copper Area 0.02 CTHERM1 8.5e-4 CTHERM2 1.8e-3 CTHERM3 5.0e-3 CTHERM4 1.3e-2 CTHERM5 4.0e-2 CTHERM6 9.0e-2 CTHERM7 4.0e-1 CTHERM8 RTHERM1 3.5e-2 RTHERM2 6.0e-1 RTHERM3 RTHERM4 RTHERM5 RTHERM6 RTHERM7 RTHERM8
JUNCTION
RTHERM1
CTHERM
RTHERM2
CTHERM2
RTHERM3
CTHERM3
RTHERM4
CTHERM4
SABER Thermal Model
Copper Area 0.02 template thermal_model thermal_c ctherm.ctherm1 8.5e-4 ctherm.ctherm2 1.8e-3 ctherm.ctherm3 5.0e-3 ctherm.ctherm4 1.3e-2 ctherm.ctherm5 4.0e-2 ctherm.ctherm6 9.0e-2 ctherm.ctherm7 4.0e-1 ctherm.ctherm8 rtherm.rtherm1 3.5e-2 rtherm.rtherm2 6.0e-1 rtherm.rtherm3 rtherm.rtherm4 rtherm.rtherm5 rtherm.rtherm6 rtherm.rtherm7 rtherm.rtherm8
RTHERM5
CTHERM5
RTHERM6
CTHERM6
RTHERM7
CTHERM7
RTHERM8
CTHERM8
AMBIENT
TABLE Thermal Models COMPONANT CTHERM6 CTHERM7 CTHERM8 RTHERM6 RTHERM7 RTHERM8 0.02 9.0e-2 4.0e-1 0.14 1.3e-1 6.0e-1 0.257 1.5e-1 4.5e-1 0.38 1.5e-1 6.5e-1 0.493 1.5e-1 7.5e-1
HUF76407DK8
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
RF1K49092
Data Sheet August 1999 File Number
3968.5
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFETPower MOSFET
This complementary power MOSFET manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers, voltage switches. This product achieves full rated conduction gate bias range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49092.
Features
3.5A, (N-Channel) 2.5A, (P-Channel) rDS(ON) 0.050 (N-Channel) rDS(ON) 0.130 (P-Channel) Temperature Compensating PSPICE® Model On-Resistance Gate Drive Voltage Curves Peak Current Pulse Width Curve Rating Curve Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RF1K49092 PACKAGE MS-012AA BRAND RF1K49092
Symbol
NOTE: When ordering, entire part number. ordering tape reel, suffix part number, i.e., RF1K4909296.
Packaging
JEDEC MS-012AA
BRANDING DASH
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. LittleFETis trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RF3V49092, RF3S49092SM
Data Sheet November 1999 File Number 4600.
20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
These complementary power MOSFETs manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers, voltage switches. This product achieves full rated conduction gate bias range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49092.
Features
20A, (N-Channel) 10A, (P-Channel) rDS(ON) 0.060 (N-Channel) rDS(ON) 0.140 (P-Channel) Temperature Compensating PSPICE® Model On-Resistance Gate Drive Voltage Curves Peak Current Pulse Width Curve Rating Curve
Symbol
Ordering Information
PART NUMBER RF3V49092 RF3S49092SM PACKAGE TS-001AA MO-169AB BRAND F3V49092 F3S49092
NOTE: When ordering, entire part number. ordering MO-169AB tape reel, suffix part number, i.e., RF3S49092SM9A.
Packaging
JEDEC TS-001AA (ALTERNATE)
JEDEC MO-169AB
4-30
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. PSPICE® registered trademark MicroSim Corporation. 1-888-INTERSIL 321-727-9207 Copyright Intersil Corporation 1999
RF3V49092, RF3S49092SM
Absolute Maximum Ratings
25oC Unless Otherwise Specified N-CHANNEL Refer Peak Current Curve Refer Curve 0.33
P-CHANNEL Refer Peak Current Curve Refer Curve 0.33
UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k, Note .VDGR Gate Source Voltage Drain Current Continuous Pulsed (Figures Pulsed Avalanche Rating (Figures 27). Power Dissipation 25oC Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications (N-Channel)
PARAMETER Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
25oC, Unless Otherwise Specified TEST CONDITIONS 250µA, (Figure VDS, 250µA, (Figure 12V, ±10V 20A, (Figure 20A, 0.24, (Figure 150o 9.6V, 20A, 0.42 (Figure TS-001AA, MO-169AB ±100 0.060 3.00 UNITS
oC/W oC/W
SYMBOL BVDSS VGS(TH) IDSS
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS
10V, 1MHz (Figure
N-Channel Source Drain Diode Specifications
PARAMETER Source Drain Voltage Reverse Recovery Time SYMBOL 20A, dISD/dt 100A/µs TEST CONDITIONS UNITS
RF3V49092, RF3S49092SM
Electrical Specifications (P-Channel)
PARAMETER Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Unless Otherwise Specified TEST CONDITIONS 250µA, (Figure VDS, 250µA, (Figure -12V, ±10V 10A, -5V, (Figures -6V, 10A, 0.62, -5V, (Figure 150o -10V -9.6V, 10A, (Figure TS-001AA, MO-169AB ±100 0.140 3.00 UNITS
oC/W oC/W
SYMBOL BVDSS VGS(TH) IDSS
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(-5) Qg(TH) CISS COSS CRSS
-10V, 1MHz (Figure
P-Channel Source Drain Diode Specifications
PARAMETER Source Drain Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS -10A -10A, dISD/dt -100A/µs -1.5 UNITS
Typical Performance Curves (N-Channel)
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC) DRAIN CURRENT
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
4-32
RF3V49092, RF3S49092SM Typical Performance Curves (N-Channel)
DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01 NOTES: DUTY FACTOR: t1/t2 PEAK 10-4 10-3 10-2 10-1
(Continued)
ZJC, NORMALIZED THERMAL IMPEDANCE
SINGLE PULSE 0.01 10-5
RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
IDM, PEAK CURRENT CAPABILITY
RATED, 25oC
1000
25oC TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
10ms 100ms
OPERATION THIS AREA LIMITED rDS(ON)
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-4 10-3 10-2 10-1 PULSE WIDTH
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
IAS, AVALANCHE CURRENT
4.5V
STARTING 25oC STARTING 150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD) 0.01 tAV, TIME AVALANCHE (ms)
DRAIN CURRENT
PULSE DURATION 80µs, 25oC DUTY CYCLE 0.5% VDS, DRAIN SOURCE VOLTAGE
NOTE:
Refer Intersil Application Notes AN9321 AN9322.
FIGURE SATURATION CHARACTERISTICS
FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
4-33
RF3V49092, RF3S49092SM Typical Performance Curves (N-Channel)
25oC rDS(ON), DRAIN SOURCE RESISTANCE 175oC DRAIN CURRENT -55oC
(Continued)
PULSE DURATION 80µs DUTY CYCLE 0.5% VGS, GATE SOURCE VOLTAGE
PULSE DURATION 80µs DUTY CYCLE 0.5% VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
SWITCHING TIME (ns) D(OFF) D(ON) NORMALIZED DRAIN SOURCE RESISTANCE 20A, 0.24
PULSE DURATION 80µs, DUTY CYCLE 0.5%
RGS, GATE SOURCE RESISTANCE
JUNCTION TEMPERATURE (oC)
FIGURE SWITCHING TIME GATE RESISTANCE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE VDS, 250µA NORMALIZED GATE THRESHOLD VOLTAGE
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
4-34
RF3V49092, RF3S49092SM Typical Performance Curves (N-Channel)
1200
(Continued)
GATE SOURCE VOLTAGE 9.6V
CAPACITANCE (pF)
1MHz CISS CRSS COSS
CISS COSS
WAVEFORMS DESCENDING ORDER: GATE CHARGE (nC)
CRSS
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
Test Circuits Waveforms (N-Channel)
BVDSS VARY OBTAIN REQUIRED PEAK
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
4-35
RF3V49092, RF3S49092SM Test Circuits Waveforms (N-Channel)
(Continued)
Qg(TOT)
Qg(5) Qg(TH) Ig(REF)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
Typical Performance Curves (P-Channel)
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC) DRAIN CURRENT
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED THERMAL IMPEDANCE
DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01 NOTES: DUTY FACTOR: t1/t2 PEAK 10-4 10-3 10-2 10-1
SINGLE PULSE 0.01 10-5
RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-36
RF3V49092, RF3S49092SM Typical Performance Curves (P-Channel)
-100 RATED, 25oC
(Continued)
-200 IDM, PEAK CURRENT CAPABILITY -100
DRAIN CURRENT
25oC TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS: -10V
10ms 100ms OPERATION THIS AREA LIMITED rDS(ON)
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION
VDS, DRAIN SOURCE VOLTAGE
10-5
10-4
10-3 10-2 10-1 PULSE WIDTH
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
-100 IAS, AVALANCHE CURRENT
-10V DRAIN CURRENT PULSE DURATION 80µs, 25oC DUTY CYCLE 0.5%
STARTING 25oC STARTING 150oC (L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD) 0.01 tAV, TIME AVALANCHE (ms)
-4.5V
VDS, DRAIN SOURCE VOLTAGE
NOTE:
Refer Intersil Application Notes AN9321 AN9322. FIGURE SATURATION CHARACTERISTICS
FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
DRAIN CURRENT 25oC 175oC rDS(ON), DRAIN SOURCE RESISTANCE
-10A
55oC
PULSE DURATION 80µs DUTY CYCLE 0.5%
PULSE DURATION 80µs DUTY CYCLE 0.5% VGS, GATE SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
4-37
RF3V49092, RF3S49092SM Typical Performance Curves (P-Channel)
SWITCHING TIME (ns) tD(OFF) tD(ON) NORMALIZED DRAIN SOURCE RESISTANCE -6V, -10A, 0.62
(Continued)
PULSE DURATION 80µs, -5V, -10A DUTY CYCLE 0.5%
RGS, GATE SOURCE RESISTANCE
JUNCTION TEMPERATURE (oC)
FIGURE SWITCHING TIME FUNCTION GATE RESISTANCE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE VDS, -250µA NORMALIZED GATE THRESHOLD VOLTAGE
-250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
1200 CISS CAPACITANCE (pF) COSS CRSS 1MHz CISS CRSS COSS
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
GATE SOURCE VOLTAGE
-9.6V
WAVEFORMS DESCENDING ORDER: -10A GATE CHARGE (nC)
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
4-38
RF3V49092, RF3S49092SM Test Circuits Waveforms (P-Channel)
VARY OBTAIN REQUIRED PEAK
BVDSS
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
VGS=
Qg(TH)
-VGS Qg(-5) Qg(TOT) Ig(REF)
VGS=
Ig(REF)
VGS= -10V
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
4-39
RF3V49092, RF3S49092SM Soldering Precautions
soldering process creates considerable thermal stress semiconductor component. melting temperature solder higher than maximum rated temperature device. amount time device heated high temperature should minimized assure device reliability. Therefore, following precautions should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should always less than 100oC. Failure preheat device result excessive thermal stress which damage device. maximum temperature gradient should less than second when changing from preheating soldering. peak temperature soldering process should least 30oC higher than melting point solder chosen. maximum soldering temperature time must exceed 260oC seconds leads case device. After soldering complete, device should allowed cool naturally least three minutes, forced cooling will increase temperature gradient result latent failure mechanical stress. During cooling, mechanical stress shock should avoided.
4-40
RF3V49092, RF3S49092SM PSPICE Electrical Model
SUBCKT RF3V49092
9.77e-10 9.19e-10 7.81e-10 DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 14.89 EVTO LDRAIN 1e-9 LGATE 1.233e-9 LSOURCE 0.452e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.012 GATE
N-Channel Model 9/6/94
DPLCAP LDRAIN
DRAIN
DBREAK RDRAIN
EVTO LGATE RGATE
MOS1 RSOURCE EBREAK MOS2
DBODY
LSOURCE SOURCE
RBREAK RVTO VBAT
RBREAK RBKMOD RDRAIN RDSMOD 4.91e-3 RGATE 2.74 RSOURCE RDSMOD 5e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
VBAT 0.3215 .MODEL DBDMOD 7.00e-13 2.15e-2 TRS1 0.5e-3 TRS2 3.68e-6 1.28e-9 1.8e-8) .MODEL DBKMOD 1.28e-1 TRS1 1.69e-3 TRS2 -2.0e-6) .MODEL DPLCAPMOD (CJO 0.84e-9 1e-30 .MODEL MOSMOD NMOS (VTO 1.63 11.55 1e-30 .MODEL RBKMOD (TC1 9.15e-4 3.13e-7) .MODEL RDSMOD (TC1 7.00e-4 5.00e-6) .MODEL RVTOMOD (TC1 -2.155e-3 -2.7e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -6.05 VOFF= -4.05) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -4.05 VOFF= -6.05) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -0.72 VOFF= 4.28) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 4.28 VOFF= -0.72) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
RF3V49092, RF3S49092SM PSPICE Electrical Model
SUBCKT RF3V49092
8.75e-10 8.65e-10 7.65e-10 DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD
DPLCAP
P-Channel Model 11/8/94
LDRAIN DRAIN
RDRAIN
EBREAK -23.75 EVTO LDRAIN 1e-9 LGATE 1.233e-9 LSOURCE 0.452e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 7.36e-3 RGATE RSOURCE RDSMOD 4.56e-2 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
GATE
EVTO LGATE RGATE MOS1 RSOURCE DBREAK EBREAK MOS2
DBODY
LSOURCE SOURCE
RBREAK RVTO VBAT
VBAT -0.558 .MODEL DBDMOD 3.0e-13 4.4e-2 TRS1 1.0e-3 TRS2 -7.37e-6 1.27e-9 2.2e-8) .MODEL DBKMOD 7.84e-2 TRS1 -4.27e-3 TRS2 5.77e-5) .MODEL DPLCAPMOD (CJO 2.85e-10 1e-30 .MODEL MOSMOD PMOS (VTO -2.1423 9.206 1e-30 .MODEL RBKMOD (TC1 9.61e-4 -1.09e-6) .MODEL RDSMOD (TC1 2.10e-3 6.99e-6) .MODEL RVTOMOD (TC1 -1.82e-3 1.47e-7) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF 5.47 VOFF= 3.47) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF 3.47 VOFF= 5.47) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF 1.05 VOFF= -3.95) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF -3.95 VOFF= 1.05) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site www.intersil.com 4-42
ITF87056DQT
Data Sheet March 2000 File Number 4813.2
20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging
TSSOP-8
Features
Ultra On-Resistance rDS(ON) 0.045, -4.5V rDS(ON) 0.048, -4.0V rDS(ON) 0.077, -2.5V 2.5V Gate Drive Capability Gate Source Protection Diode Simulation Models Temperature Compensated PSPICEand SABER Electrical Models Spice SABER Thermal Impedance Models www.intersil.com Peak Current Pulse Width Curve
Symbol
DRAIN1(1) OURCE1(2) SOURCE1(3) GATE1(4) DRAIN2 SOURCE2 SOURCE2 GATE2
Transient Thermal Impedance Curve Board Mounting Area Switching Time Curves
Ordering Information
PART NUMBER ITF87056DQT PACKAGE TSSOP-8 87056 BRAND
NOTE: When ordering, entire part number. ITF87056DQT2 available only tape reel.
Absolute Maximum Ratings
25oC, Unless Otherwise Specified ITF87056DQT Figure UNITS mW/oC
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous 25oC, -4.5V) (Note Continuous 25oC, -4.0V) (Note Continuous 100oC, -4.0V) (Note Continuous 100oC, -2.5V) (Note Pulsed Drain Current .IDM Power Dissipation (Note Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief TB370 Tpkg NOTES: 25oC 125oC. 62.5oC/W measured using FR-4 board with 0.50 (322.6 copper second. 230oC/W measured using FR-4 board with 0.0022 (1.44 mm2) copper 1000 seconds.
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
CAUTION: These devices sensitive electrostatic discharge. Follow proper Handling Procedures. SABER© Copyright Analogy Inc. PSPICE® registered trademark MicroSim Corporation. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 2000
ITF87072DK8T
Data Sheet
March 2000
File Number
4812.3
20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging
(JEDEC MS-012AA)
BRANDING DASH
Features
Ultra On-Resistance rDS(ON) 0.037, -4.5V rDS(ON) 0.039, -4.0V rDS(ON) 0.059, -2.5V Gate Source Protection Diode Simulation Models Temperature Compensated PSPICEand SABER Electrical Models Spice SABER Thermal Impedance Models www.intersil.com Peak Current Pulse Width Curve Transient Thermal Impedance Curve Board Mounting Area
Symbol
DRAIN1(8) DRAIN1(7) SOURCE1(1) GATE1(2) DRAIN2(6) DRAIN2(5) SOURCE2(3) GATE2(4)
Switching Time Curve
Ordering Information
PART NUMBER ITF87072DK8T PACKAGE 87072 BRAND
NOTE: When ordering, entire part number. ITF87072DK8T available only tape reel.
Absolute Maximum Ratings
25oC, Unless Otherwise Specified ITF87072DK8T Figure UNITS mW/oC
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous 25oC, -4.5V) (Note Continuous 25oC, -4.0V) (Note Continuous 100oC, -4.0V) (Note Continuous 100oC, -2.5V) (Note Pulsed Drain Current .IDM Power Dissipation (Note Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Technical Brief TB370 Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTES: 25oC 125oC. 50oC/W measured using FR-4 board with 0.14 (90.3 mm2) copper second. 228oC/W measured using FR-4 board with 0.006 (3.9 mm2) copper 1000 second.
CAUTION: These devices sensitive electrostatic discharge. Follow proper Handling Procedures. SABER© Copyright Analogy Inc. PSPICE® registered trademark MicroSim Corporation. 1-888-INTERSIL 321-724-7143 Intersil Design trademark Intersil Corporation. Copyright Intersil Corporation 2000
ITF87008DQT
Data Sheet March 2000 File Number 4814.2
7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET Packaging
TSSOP-8
Features
Ultra On-Resistance rDS(ON) 0.023, 4.5V rDS(ON) 0.024, 4.0V rDS(ON) 0.029, 2.5V Volt Gate Drive Capability Gate Source Protection Diode Simulation Models Temperature Compensated PSPICEand SABER Electrical Models Spice SABER Thermal Impedance Models www.intersil.com Peak Current Pulse Width Curve Transient Thermal Impedance Curve Board Mounting Area Switching Time Curves
Symbol
DRAIN1(1) SOURCE1(2) SOURCE1(3) GATE1(4) DRAIN2 SOURCE2 SOURCE2 GATE2
Ordering Information
PART NUMBER ITF87008DQT PACKAGE TSSOP-8 87008 BRAND
NOTE: When ordering, entire part number. ITF87008DQT2 available only tape reel.
Absolute Maximum Ratings
25oC, Unless Otherwise Specified ITF87008DQT Figure UNITS mW/oC
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous 25oC, 4.5V) (Note Continuous 25oC, 4.0V) (Note Continuous 100oC, 4.0V) (Note Continuous 100oC, 2.5V) (Note Pulsed Drain Current .IDM Power Dissipation (Note Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief TB370 Tpkg NOTES: 25oC 125oC. 62.5oC/W measured using FR-4 board with 0.50 (322.6 copper second. 230oC/W measured using FR-4 board with 0.0022 (1.44 mm2) copper 1000 seconds.
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
CAUTION: These devices sensitive electrostatic discharge. Follow proper Handling Procedures. SABER© Copyright Analogy Inc. PSPICE® registered trademark MicroSim Corporation. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 2000
RF1K49223
Data Sheet August 1999 File Number
4322.
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
RF1K49223 Dual P-Channel power MOSFET manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers, voltage switches. This device operated directly from integrated circuits. Formerly developmental type TA49223.
Features
2.5A, rDS(ON) 0.150 Temperature Compensating PSPICE® Model Thermal Impedance PSPICE Model Peak Current Pulse Width Curve Rating Curve Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RF1K49223 PACKAGE MS-012AA BRAND RF1K49223
Symbol
D1(8) D1(7) S1(1) G1(2)
NOTE: When ordering, entire part number. ordering tape reel, suffix part number, i.e. RF1K4922396.
D2(6) D2(5) S2(3) G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
8-16
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. LittleFETis trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RF1K49086
Data Sheet August 1999 File Number
3986.5
3.5A, 30V, 0.06 Ohm, Dual N-Channel LittleFETPower MOSFET
This Dual N-Channel power MOSFET manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching convertors, motor drivers, relay drivers, voltage switches. This device operated directly from integrated circuits. Formerly developmental type TA49086.
Features
3.5A, rDS(ON) 0.060 Temperature Compensating PSPICE® Model Peak Current Pulse Width Curve Rating Curve Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RF1K49086 PACKAGE MS-012AA BRAND RF1K49086
Symbol
D1(8) D1(7)
NOTE: When ordering, entire part number. ordering tape reel, suffix part number, i.e., RF1K4908696.
S1(1) G1(2)
D2(6) D2(5)
S2(3) G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
8-87
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. LittleFETis trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RF1K49088
Data Sheet August 1999 File Number
3952.5
3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFETPower MOSFET
This Dual N-Channel power MOSFET manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers, voltage switches. This product achieves full rated conduction gate bias range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49088.
Features
3.5A, rDS(ON) 0.060 Temperature Compensating PSPICE® Model On-Resistance Gate Drive Voltage Curves Peak Current Pulse Width Curve Rating Curve Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
BRAND RF1K49088
S1(1) G1(2) D1(8) D1(7)
Ordering Information
PART NUMBER RF1K49088 PACKAGE MS-012AA
NOTE: When ordering, entire part number. ordering tape reel, suffix part number, i.e., RF1K4908896.
D2(6) D2(5)
S2(3) G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
8-94
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. LittleFETis trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RF1K49088
Absolute Maximum Ratings
25oC Unless Otherwise Specified RF1K49088 Refer Peak Current Curve Refer Curve 0.016 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k, Note VDGR Gate Source Voltage Drain Current Continuous (Pulse Width 5s). Pulsed (Figure .IDM Pulsed Avalanche Rating (Figure Power Dissipation 25oC. Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA, (Figure 30V, ±10V 3.5A, (Figures 15V, 3.5A, 4.29, (Figure 25oC 150oC 24V, 3.5A, 6.86 (Figure Pulse width Device mounted FR-4 material ±100 0.060 62.5 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 3.5A 3.5A, dISD/dt 100A/µs 1.25 UNITS
8-95
RF1K49088 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT AMBIENT TEMPERATURE (oC) AMBIENT TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION AMBIENT TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT AMBIENT TEMPERATURE
ZJA, NORMALIZED THERMAL IMPEDANCE
DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01
SINGLE PULSE NOTES: DUTY FACTOR: t1/t2 PEAK 10-1 RECTANGULAR PULSE DURATION
0.01 10-3
10-2
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
PEAK CURRENT CAPABILITY
RATED 25oC
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
10ms 100ms
25oC
OPERATION THIS AREA LIMITED rDS(ON) VDSS(MAX)
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-5
0.01
10-4
VDS, DRAIN SOURCE VOLTAGE
10-3 10-2 10-1 PULSE WIDTH
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
8-96
RF1K49088 Typical Performance Curves
(Continued)
4.5V
AVALANCHE CURRENT
STARTING 25oC
DRAIN CURRENT
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD)
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC VDS, DRAIN SOURCE VOLTAGE
STARTING 150oC
tAV, TIME AVALANCHE (ms)
NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE SATURATION CHARACTERISTICS
ID(ON) ON-STATE DRAIN CURRENT
25oC 150oC
rDS(ON) ON-STATE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5% -55oC
7.0A PULSE DURATION 80µs DUTY CYCLE 0.5%
3.5A 1.75A
0.5A
VGS, GATE SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
SWITCHING TIME (ns)
15V, 3.5A, 4.29 NORMALIZED DRAIN SOURCE RESISTANCE tD(OFF)
PULSE DURATION 80µs DUTY CYCLE 0.5% 3.5A
tD(ON)
RGS, GATE SOURCE RESISTANCE
JUNCTION TEMPERATURE (oC)
FIGURE SWITCHING TIME GATE RESISTANCE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
8-97
RF1K49088 Typical Performance Curves
VDS, 250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
(Continued)
250µA
THRESHOLD VOLTAGE
NORMALIZED GATE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
1000
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
DRAIN-SOURCE VOLTAGE 5.00 BVDSS 22.5 BVDSS 3.75 GATE-SOURCE VOLTAGE
CISS CAPACITANCE (pF) 1MHz CISS CRSS COSS
COSS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 8.57 IG(REF) 0.2mA TIME (µs)
2.50
1.25
CRSS
0.00
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
8-98
RF1K49088 Test Circuits Waveforms
(Continued)
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY) Qg(5) Qg(TOT)
BATTERY
0.2µF
0.3µF
SAME TYPE
Qg(TH)
Ig(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
Soldering Precautions
soldering process creates considerable thermal stress semiconductor component. melting temperature solder higher than maximum rated temperature device. amount time device heated high temperature should minimized assure device reliability. Therefore, following precautions should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should always less than 100oC. Failure preheat device result excessive thermal stress which damage device. maximum temperature gradient should less than second when changing from preheating soldering. peak temperature soldering process should least 30oC higher than melting point solder chosen. maximum soldering temperature time must exceed 260oC seconds leads case device. After soldering complete, device should allowed cool naturally least three minutes, forced cooling will increase temperature gradient result latent failure mechanical stress. During cooling, mechanical stress shock should avoided.
8-99
RF1K49088 PSPICE Electrical Model
SUBCKT RF1K49088 1.081e-9 1.138e-9 0.673e-9
7/21/94
DPLCAP MOS2 MOS1 RSOURCE EBREAK DBODY RDRAIN DBREAK LDRAIN
DRAIN
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 34.1 EVTO GATE LGATE RGATE
EVTO
LSOURCE SOURCE RVTO
RBREAK
LDRAIN 1e-9 LGATE 1.233e-9 LSOURCE 0.452e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 1.408e-3 RGATE 3.33 RSOURCE RDSMOD 20e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
VBAT
VBAT 0.211 .MODEL DBDMOD 2.82e-13 1.72e-2 TRS1 1.58e-3 TRS2 1.23e-7 9.19e-10 2.03e-8) .MODEL DBKMOD 2.65e-1 TRS1 5.00e-3 TRS2 7.09e-5) .MODEL DPLCAPMOD (CJO 0.42e-9 1e-30 .MODEL MOSMOD NMOS (VTO 2.01 15.01 1e-30 .MODEL RBKMOD (TC1 1.02e-3 -1.98e-6) .MODEL RDSMOD (TC1 3.50e-3 3.70e-6) .MODEL RVTOMOD (TC1 -2.53e-3 8.13e-7) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -6.2 VOFF= -3.8) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.8 VOFF= -6.2) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -1.4 VOFF= 4.1) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF VOFF= -1.4) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
8-100
RF1K49086
Absolute Maximum Ratings
25oC Unless Otherwise Specified RF1K49086 Refer Peak Current Curve Refer Curve 0.016 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k, Note VDGR Gate Source Voltage Drain Current Continuous (Pulse Width 5s). Pulsed (Figure Pulsed Avalanche Rating (Figure .EAS Power Dissipation 25oC. Derate Above 25oC Operating Storage Temperature .TJ, TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA, (Figure 30V, ±20V 3.5A (Figures 4.5V 25oC 150oC 24V, 3.5A, 6.86 (Figure Pulse Width Device mounted FR-4 material ±100 0.060 0.132 62.5 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance
IGSS rDS(ON)
Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Ambient
td(ON) td(OFF) tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS
15V, 3.5A, 4.29, 10V,
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 3.5A 3.5A, dISD/dt 100A/µs 1.25 UNITS
8-88
HUF76105DK8
Data Sheet
June 2000
File Number
4380.6
30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
This N-Channel power MOSFET manufactured using innovative UltraFETprocess. This advanced process technology achieves lowest possible on-resistance silicon area, resulting outstanding performance. This device capable withstanding high energy avalanche mode diode exhibits very reverse recovery time stored charge. designed applications where power efficiency important, such switching regulators, switching converters, motor drivers, relay drivers, low-voltage switches, power management portable battery operated products. Formerly developmental type TA76105.
Features
Logic Level Gate Drive Ultra On-Resistance, rDS(ON) 0.050 Temperature Compensating PSPICE® Model Temperature Compensating SABER© Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current Pulse Width Curve Rating Curve Related Literature TB334, "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER HUF76105DK8 PACKAGE MS-012AA BRAND 76105DK8
Symbol
D1(8) D1(7) S1(1) G1(2)
NOTE: When ordering, entire part number. suffix obtain variant tape reel, e.g., HUF76105DK8T.
D2(6) D2(5) S2(3) G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. UltraFET® registered trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. SABERis trademark Analogy, Inc. 1-888-INTERSIL 321-724-7143 Intersil Design trademark Intersil Corporation. Copyright Intersil Corporation 2000
HUF76105DK8
Absolute Maximum Ratings
25oC, Unless Otherwise Specified HUF76105DK8 Figure Figures 0.02 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous (TA= 25oC, 10V) (Figure (Note Continuous (TA= 100oC, (Note Continuous (TA= 100oC, 4.5V) (Note Pulsed Drain Current Pulsed Avalanche Rating. .EAS Power Dissipation (Note Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperatu
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