future VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200

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future VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200

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future
VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs
figures part-no. represent current rating DRM,RRM max. DRM,RRM max. 1800
typical Packages
Stud case
1078 1258/1259 2509
Flat case
588/589 618/619 1200
718/719 1189 1209 1509 1989 3159 Epoxy disc
1500 2551 2651
Ceramic disc click part-no. select datasheet click other topologies
Type Designation
Technical Explanation
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future
VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs
figures part-no. represent current rating DRM,RRM max. 2200 1039 1329 1866 2710 1869 2706 2709 699/708 2479 DRM,RRM max. 2800 DRM,RRM max. 3800 1929 2006 2009 Epoxy disc 1601 2001 3401N
typical Packages
458/459 1059 1219 658/659 1589 699/708 2156/2159 2476 2479 2510 4301
2101 2160 2480
Ceramic disc click part-no. select datasheet click other topologies
Type Designation
Technical Explanation
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future
VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs
figures part-no. represent current rating
DRM,RRM max. 4200
DRM,RRM max. 5200
typical Packages
1401
Epoxy disc 1321 1451 1551 2161 2301 2351 2401 2601 2851
Ceramic disc click part-no. select datasheet click other topologies
Type Designation
Technical Explanation
Home Products N-Thyristors News Contact Editorials Offers Company Search Site Content
future
VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs
figures part-no. represent current rating
DRM,RRM max. 7000 1081 1851
DRM,RRM max. 8000 1201 1501 1901 2561
typical Packages
Type Designation
Technical Explanation
Ceramic disc
click part-no. select datasheet click other topologies
Home Products N-Thyristors News Contact Editorials Offers Company Search Site Content
future
VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200V VDRM,RRM max. 8000V Light Triggered SCRs
figures part-no. represent current rating
DRM,RRM max. 8000 1503 2563
typical Packages
Ceramic disc 4003 click part-no. select datasheet click other topologies
Type Designation
Technical Explanation
Type designations
Thyristors
symmetrically blocking thyristor asymmetrically blocking thyristor limiting average forward current Ceramic disc Ceramic disc Epoxy disc high Epoxy disc high Epoxy disc high Epoxy disc high Epoxy disc high
Typenbezeichnungen
Rectifier
1809 1809 diode limiting average current rule 100° rectifier diode: anode case press-pack cathode case fast rectifier diode: anode case press-pack cathode case limiting repetitive peak reverse voltage mechanical construction: metric thread wire metric thread cable stud solder flat-base cable press-pack Avalanche Diode anode case Avalanche Diode cathode case
IGBT modules Type designation
F4FD
IGBT Diode: IHM/IHV eupec modules
Dual Switch Single Switch 3-phase full Bridge Power integrated Modul phase bridge Chopper config. Dual Diode (for circuit outline) Max. DC-collector current Reverse conducting Fast Short Tail IGBT Chip Collector-emitter-voltage Mechanical construction: Module Fast switching IGBT Chip Loss IGBT Chip Short Tail IGBT Chip fast IGBT3 Chip Internal reference number With EmCon diode Higher rated diode Construction variation Electrical selection
B1.n S1.n
2.Letter fast thyristor, gatecathode interdigitated fast thyristor, central gate phase control thyristor limiting repetitive peak forward reverse off-state voltage 1800 repetitive peak forward off-state voltage) mechanical construction anode: cathode: metric thread cable metric thread solder flat base cable case disc 5.Letter maximum turn-off time guaranteed max. value data sheet data sheet critical rate rise forward voltage, thyristors line commutated converters: V/µs V/µs 1000 V/µs 1500 V/µs 2000 V/µs thyristors selfcommutated converters: critical rate rise forward voltage according immediately after turn-off: 747-6: V/µs V/µs V/µs V/µs 1000 V/µs 1000 V/µs V/µs V/µs 1000 V/µs V/µs 1000 V/µs V/µs
Half-controlled thyristor modules
3.Letter 4.Letter
TD,DT with symmetric thyristor diode with asymmetric thyristor diode (for circuit outline) limiting average on-state current (A), phase control thyristor retifier diode fast thyristor fast diode fast thyristor with interdigitated gate fast diode repetitive peak-off-state voltage mech. constr.: pressure contact turn-off time (see thyristors) critical rate rise off-state voltage special design with common anode special design with common cathode
IGBT Diodes: modules
Silicon Type: S=Switch, Diode Module current rating technology: IGBT-technology Configuration: single switch diode Halfbridge 3-phase full bridge Tripack single switches) Power Integrated Module AL=Chopper, diode conn. collector AR=Chopper, diode conn. emitter max. coll.-emitter-voltage with fast internal diode inductance module design Loss IGBT chip generation silicon design variation design variation collector sense xxxx special type with codo-no

future VDRM,RRM max. 1800V VDRM,RRM max. 3800V VDRM,RRM max. 5200

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