N-CHANNEL 650V @Tjmax 0.09 TO-247 MDmeshTMPower MOSFET TYPE STW45
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STW45NM60
N-CHANNEL 650V @Tjmax 0.09 TO-247 MDmeshTMPower MOSFET
TYPE STW45NM60 VDSS(@Tjmax) 650V RDS(on) 0.11
TYPICAL RDS(on) 0.09 HIGH dv/dt AVALANCHE CAPABILITIES 100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TIGHT PROCESS CONTROL HIGH MANUFACTURING YIELDS DESCRIPTION MDmeshis revolutionary MOSFET technology that associates Multiple Drain process with Company's PowerMESHhorizontal layout. resulting product outstanding on-resistance, impressively high dv/dt excellent avalanche characteristics. adoption Company's proprietary strip technique yields overall dynamic performance that significantly better than that similar competition's products. APPLICATIONS MDmeshfamily very suitable increasing power density high voltage converters allowing system miniaturization higher efficiencies.
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol PTOT dv/dt Tstg October 2003 Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Parameter Value 3.33
45A, di/dt 400A/µs, V(BR)DSS, TJMAX.
Unit W/°C V/ns
width limited safe operating area
STW45NM60
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient °C/W °C/W
Maximum Lead Temperature Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. ±100 Typ. Max. Unit
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, 22.5A Min. Typ. 0.09 Max. 0.11 Unit
DYNAMIC
Symbol Ciss Coss Crss Coss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance 480V Gate Bias Test Signal Level 20mV Open Drain Test Conditions ID(on) RDS(on)max, 22.5A 25V, MHz, Min. Typ. 3800 1250 Max. Unit
Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS
STW45NM60
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 250V, 22.5A (see test circuit, Figure 400V, 45A, Min. Typ. Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 400V, 45A, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 45A, 45A, di/dt 100A/µs, 25°C (see test circuit, Figure 45A, di/dt 100A/µs, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area
Thermal Impedance
STW45NM60
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STW45NM60
Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature
Normalized BVDSS Temperature
Source-drain Diode Forward Characteristics
STW45NM60
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STW45NM60
TO-247 MECHANICAL DATA
MIN. 4.85 2.20 0.40 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 3.55 3.65 0.14 0.07 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05
DIM.
STW45NM60
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