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N-CHANNEL 650V @Tjmax 0.25 -20A TO-220/FP/D2PAK/I2PAK MDmeshMOSFE
Top Searches for this datasheetSTP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 650V @Tjmax 0.25 -20A TO-220/FP/D2PAK/I2PAK MDmeshMOSFET TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 VDSS (@Tjmax) RDS(on) 0.29 0.29 0.29 0.29 TYPICAL RDS(on) 0.25 HIGH dv/dt AVALANCHE CAPABILITIES 100% AVALANCHE TESTED INPUT CAPACITANCE GATE CHARGE GATE INPUT RESISTANCE TO-220 TO-220FP DESCRIPTION MDmeshis revolutionary MOSFET technology that associates Multiple Drain process with Company's PowerMESHhorizontal layout. resulting product outstanding on-resistance, impressively high dv/dt excellent avalanche characteristics. adoption Company's proprietary strip technique yields overall dynamic performance that significantly better than that similar competition's products. APPLICATIONS MDmeshfamily very suitable increasing power density high voltage converters allowing system miniaturization higher efficiencies. I2PAK D2PAK INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol PTOT dv/dt(1) VISO Tstg Gate- source Voltage Drain Current (continuous) 25°C Drain Current (continuous) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --65 12.6 2500 Parameter Value STP(B)20NM60(-1) 20(*) 12.6(*) 80(*) 0.36 STP20NM60FP W/°C V/ns Unit width limited safe operating area 20A, di/dt 400A/µs, V(BR)DSS, TJMAX. (*)Limited only maximum temperature allowed February 2004 1/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 THERMAL DATA TO-220/D2PAK/I2PAK Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient 0.65 62.5 TO-220FP °C/W °C/W Maximum Lead Temperature Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED) Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions Min. ±100 Typ. Max. Unit Rating Zero Gate Voltage Drain Current (VGS Rating, Gate-body Leakage Current (VDS ±30V Symbol VGS(th) RDS(on) Parameter Static Drain-source Resistance Test Conditions 10V, Min. Typ. 0.25 Max. 0.29 Unit Gate Threshold Voltage VGS, 250µA DYNAMIC Symbol Ciss Coss Crss Coss Parameter Test Conditions Min. Typ. 1500 400V Gate Bias=0 Test Signal Level=20mV Open Drain Max. Unit Forward Transconductance ID(on) RDS(on)max, Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance 25V, MHz, Pulsed: Pulse duration duty cycle Coss defined constant equivalent capacitance giving same charging time Coss when increases from VDSS. 2/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 200V, (see test circuit, Figure 400V, 20A, Min. Typ. Max. Unit SWITCHING Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 480V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit SOURCE DRAIN DIODE Symbol ISDM Irrm Irrm Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs, 25°C (see test circuit, Figure di/dt 100A/µs, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area. Safe Operating Area TO-220/D2PAK/I2PAK Safe Operating Area TO-220FP 3/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 Thermal Impedance TO-220/D2PAK/I2PAK Thermal Impedance TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-Source Resistance 4/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 Gate Charge Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature Source-drain Diode Forward Characteristics 5/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform Fig. Switching Times Test Circuit Resistive Load Fig. Gate Charge test Circuit Fig. Test Circuit Inductive Load Switching Diode Recovery Times 6/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 TO-220 MECHANICAL DATA MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 DIM. 7/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 TO-220FP MECHANICAL DATA MIN. 0.45 0.75 1.15 1.15 4.95 28.6 15.9 30.6 10.6 16.4 1.126 .0385 0.114 0.626 0.354 0.118 MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. 8/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 D2PAK MECHANICAL DATA DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 9/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 TO-262 (I2PAK) MECHANICAL DATA DIM. MIN. 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 3.50 1.27 MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 10/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 FOOTPRINT TUBE SHIPMENT suffix)* TAPE REEL SHIPMENT (suffix "T4")* REEL MECHANICAL DATA DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE 1000 sales type 11/12 STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. 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