N-CHANNEL 120A TO-220/D2PAK/I2PAK STripFETII POWER MOSFET PRELIMI
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STP200NF04 STB200NF04 STB200NF04-1
N-CHANNEL 120A TO-220/D2PAK/I2PAK STripFETII POWER MOSFET
PRELIMINARY DATA TYPE STP200NF04 STB200NF04 STB200NF04-1
VDSS
RDS(on) 0.0037 0.0037 0.0037
STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
TO-220 I2PAK
DESCRIPTION This MOSFET latest development STMicroelectronics unique "Single Feature SizeTM" stripbased process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility.
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED AUTOMOTIVE
ORDERING INFORMATION
SALES TYPE STP200NF04 STB200NF04T4 STB200NF04-1 MARKING P200NF04 B200NF04 B200NF04 PACKAGE TO-220 D2PAK I2PAK PACKAGING TUBE TAPE REEL TUBE
December 2003
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STP200NF04 STB200NF04 STB200NF04-1
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature Value 2.07 Unit W/°C V/ns
Pulse width limited safe operating area 120A, di/dt 500A/µs, V(BR)DSS, TJMAX. Starting 25°C, 60A, VDD=30 Current Limited Package
THERMAL DATA
TO-220 I2PAK D2PAK Rthj-case Rthj-pcb Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-pcb Thermal Resistance Junction-ambient (Free air) Maximum Lead Temperature Soldering Purpose 0.48 Curve page 62.5 °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS Gate-body Leakage Current (VDS Gate Threshold Voltage Static Drain-source Resistance Test Conditions Rating Rating, VGS, 250µA 10V, Min. ±100 0.0037 Typ. Max. Unit
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STP200NF04 STB200NF04 STB200NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC
Symbol Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions 25V, MHz, Min. Typ. 5100 1600 Max. Unit
SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions (Resistive Load see, Figure 20V, (see, Figure Min. Typ. Max. Unit
SWITCHING
Symbol td(off) Parameter Turn-off Delay Time Fall Time Test Conditions (Resistive Load see, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt 100A/µs 30V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
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STP200NF04 STB200NF04 STB200NF04-1
Thermal Resistance Rthj-a Copper Area Power Dissipation Copper Area
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STP200NF04 STB200NF04 STB200NF04-1
Allowable Time Avalanche
previous curve gives safe operating area unclamped inductive loads, single pulse repetitive, under following conditions: PD(AVE) (1.3 BVDSS IAV) EAS(AR) PD(AVE) Where: Allowable Current Avalanche PD(AVE) Average Power Dissipation Avalanche (Single Pulse) Time Avalanche derate above fixed IAV, following equation must applied: (Tjmax TCASE) (1.3 BVDSS Zth) Where: value coming from Normalized Thermal Response fixed pulse width equal TAV.
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STP200NF04 STB200NF04 STB200NF04-1
SPICE THERMAL MODEL
Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 CTHERM5 CTHERM6 Node Value 1.4958E-3 3.5074E-2 5.939E-2 9.7411E-2 8.8596E-2 8.2755E-1
RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6
0.0384 0.0624 0.072 0.0912 0.1008 0.1152
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STP200NF04 STB200NF04 STB200NF04-1
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. 3.1: Inductive Load Switching Diode Recovery Times Waveform
Fig. Gate Charge test Circuit
Fig. 4.1: Gate Charge test Waveform
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STP200NF04 STB200NF04 STB200NF04-1
Fig. Test Circuit Diode Recovery Times Fig. 5.1: Diode Recovery Times Waveform
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STP200NF04 STB200NF04 STB200NF04-1
TO-220 MECHANICAL DATA
MIN. 4.40 0.61 1.15 0.49 15.25 2.40 4.95 1.23 6.20 2.40 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM.
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STP200NF04 STB200NF04 STB200NF04-1
D2PAK MECHANICAL DATA
DIM. MIN. 4.88 1.27 5.28 15.85 1.75 0.192 0.590 0.050 0.055 0.094 0.015 2.49 0.03 1.14 0.45 1.23 8.95 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 MAX. 2.69 0.23 0.93 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
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STP200NF04 STB200NF04 STB200NF04-1
TO-262 (I2PAK) MECHANICAL DATA
DIM. MIN. 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 3.50 1.27 MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STP200NF04 STB200NF04 STB200NF04-1
D2PAK FOOTPRINT
TUBE SHIPMENT suffix)*
TAPE REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. 12.8 20.2 24.4 30.4 26.4 13.2 MIN. MAX. 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM.
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BASE 1000
MIN. 10.5 15.7 1.59 1.65 11.4 11.9 0.25 23.7 24.3 MAX. 10.7 15.9 1.61 1.85 11.6 12.1
inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574
0.35 0.0098 0.0137 0.933 0.956
sales type
STP200NF04 STB200NF04 STB200NF04-1
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