Switching (30V, ±11A) RSS110N03 Features on-resistance. Buil
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RSS110N03
Switching (30V, ±11A)
RSS110N03
Features on-resistance. Built-in Protection Diode. Small Surface Mount Package (SOP8). External dimensions (Unit
SOP8
5.0±0.2
6.0±0.3 3.9±0.15
Max.1.75
1.5±0.1 0.15
Applications Power switching, DC/DC converter.
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
1.27
0.4±0.1 Each lead same dimensions
Structure N-channel
Equivalent circuit
(1)Source (2)Source (3)Source (4)Gate (5)Drain (6)Drain (7)Drain (8)Drain
PROTECTION DIODE BODY DIODE
protection diode included between gate source terminals protect diode against static electricity when product use. protection circuit when fixed voltages exceeded.
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipatino Channel temperature Strage temperature
Pw10µs, Duty cycle1% Mounted ceramic board.
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS Tstg
Limits +150
Unit
0.5±0.1
0.2±0.1
RSS110N03
Thermal resistance (Ta=25°C)
Parameter Channel ambient
Mounted ceramic board.
Symbol (ch-a)
Limits 62.5
Unit
Electrical characteristics (Ta=25°C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) Zero gate voltage drain current IDSS Gate threshold voltage (th) Static drain-source on-starte resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Tum-on delay time Rise time Tum-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
(on)
Ciss Coss Crss (on) (off)
Min.
Typ. 10.3 11.2 1300
Max. 10.4 14.3 15.5
Unit
Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=±11A, VGS=10V ID=±11A, VGS=4.5V ID=±11A, VGS=4V ID=±11A, VDS=10V VDS=10V VGS=0V f=1MHz ID=5.5A, VGS=10V RL=2.73 RGS=10 VGS=5V ID=±11A
Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter Forward voltage
Pulsed
Symbol
Min.
Typ.
Max.
Unit
Conditions IS=6.4A, VGS=0V
Electrical characteristic curves
10000
SWITCHING TIME (ns)
CAPACITANCE (pF)
1000
(off)
1000
Ciss
GATE-SOURCE VOLTAGE
Ta=25°C f=1MHz VGS=0V
10000
Ta=25°C VDD=15V VGS=10V RG=10 Pulsed
Ta=25°C VDD=15V ID=11A RG=10 Pulsed
Coss
Crss
(on)
0.01
0.01
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
TOTAL GATE CHARGE (nC)
Fig.1 Typical Capacitance Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
RSS110N03
VDS=10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
Ta=25°C Pulsed
ID=11A ID=5.5A
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS=0V Pulsed
SOURCE CURRENT
DRAIN CURRENT
0.01
0.001
0.01
GATE-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
SOURCE-DRAIN VOLTAGE
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance Gate-Source Voltage
Fig.6 Source Current Source-Drain Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
VGS=10V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
VGS=4.5V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE (on)
1000
1000
1000
VGS=4V Pulsed
Ta=125°C Ta=75°C Ta=25°C -25°C
DRAIN CURRENT
DRAIN CURRENT
DRAIN CURRENT
Fig.7 Static Drain-Source On-State Resistance Drain Current
Fig.8 Static Drain-Source On-State Resistance Drain Current
Fig.9 Static Drain-Source On-State Resistance Drain Current
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document silicon basic material. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.0
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