Phototransistor, view type RPT-38PB3F RPT-38PB3F silicon pla
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RPT-38PB3F
Phototransistor, view type
RPT-38PB3F
RPT-38PB3F silicon planar phototransistor. Since molded plastic with visible light filter, there almost effect from stray light. particularly suited with ROHM SIR-34ST3F infrared light emitting diode.
!Application Optical control equipment Receiver sensors
!External dimensions (Units
Notes: Unspecified tolerance shall ±0.2 Dimension parenthesis show reference.
3.1±0.2
+0.1 -0.3
(2.5)
2.5±1
Min.24
Max.1
!Features High sensitivity. Almost effect from stray light.
4-0.6
5.2±0.3
Internal connection diagram
Emitter
Collector
!Absolute maximum ratings 25°C)
Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Symbol VCEO VECO Topr Tstg Limits -25~+85 -30~+100 Unit
!Electrical optical characteristics 25°C)
Parameter Light current Dark current Peak sensitivity wavelength Collector-emitter saturation voltage Half-angle Response time Symbol ICEO Min. Typ. Max. Unit Conditions VCE=5V, E=500LX VCE=10V(Black box) IC=1mA, E=500LX VCC=5V, IC=1mA, RL=100
VCE(sat)
RPT-38PB3F
!Electrical optical characteristic curves
1000
RELATIVE LIGHT CURRENT
VCE=5V
DARK CURRENT ICEO (nA)
1000
LIGHT CURRENT (mA)
VCE=10V VCE=20V VCE=30V
1000
1250
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
ILLUMINANCE (Lx)
Fig.1 Dark current ambient temperature
Fig.2 Relative output ambient temperature
Fig.3 Light current irradiance
RELATIVE SENSITIVITY
LIGHT CURRENT (mA)
COLLECTOR DISSIPATION (mW)
E=1000Lux 750Lux
500Lux 250Lux
1000
1200
1600
COLLECTOR-EMITTER VOLTAGE
OPTICAL WAVELENGTH (nm)
AMBIENT TEMPERATURE (°C)
Fig.4 Output characteristics
Fig.5 Spectral sensitivity
Fig.6 Collector dissipation ambient temperature
1000
RL=1k RL=500
RL=100
ANGULAR DISPLACEMENT (deg)
COLLECTOR CURRENT (mA)
RELATIVE LUMINOUS INTENSITY
Fig.7 Response time collector current
Fig.8 Directional pattern
RELATIVE LUMINOUS INTENSITY
Ta=25°C VCE=5V
RESPONSE TIME (µs)
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