Power Transistor (15V, 0.5A) 2SD1757K !Features VCE(sat). (T
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2SD1757K
Power Transistor (15V, 0.5A)
2SD1757K
!Features VCE(sat). (Typ.8mV IC/IB 10/1mA) Optimal muting. !External dimensions (Units
!Absolute maximum ratings 25°C)
0.15
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO Tstg
Limits -55~+150
Unit
0.3to0.6
0to0.1
Each lead same dimensions
0.95 0.95
ROHM SMT3 EIAJ SC-59
Emitter(Source) Base(Gate) Collector(Drain)
!Packaging specifications
Type Package Marking Code Basic ordering unit (pieces)
Denotes
2SD1757K SMT3 T146 3000
!Electrical characteristics 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) Min. Typ. Max. Unit 50µA 50µA IC/IB 500mA/50mA VCE/IC 3V/100mA -50mA 100MHz 1MHz Conditions
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