INDICATES ANODE 0.224 [5.69] WIRE BONDS PHOTODIODE 120° VIEWING ANGLE
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PHOTONIC Silicon Photodiode, U.V. DETECTORS INC.
INDICATES ANODE 0.224 [5.69] WIRE BONDS PHOTODIODE 120° VIEWING ANGLE
Enhanced Photovoltaic Type PDU-V113
0.140 [3.56] 0.070 [1.78] 1.50 [38.1] ANODE 0.200 [5.08] [0.51]
[6.73]
OPTICAL EPOXY 0.125 [3.18] SQUARE
CATHODE CERAMIC
0.113 [2.87] ACTIVE AREA
CERAMIC PACKAGE
ACTIVE AREA 7.95
FEATURES noise U.V. enhanced High shunt resistance High response
DESCRIPTION PDU-V113 silicon, planar diffused, U.V. enhanced photodiode. Ideal noise photovoltaic applications. Packaged lead ceramic substrate with clear U.V. epoxy glob top.
RESPONSIVITY (A/W)
APPLICATIONS U.V. exposure meter Water purification Fluorescence U.V. meters SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +100 +240
1000
1100
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance Spectral Response Peak Breakdown Voltage Noise Equivalent Power Response Time 2850 6x10
UNITS
1100
range
Spectral Application Range Spot Scan Spot Scan Peak
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice. [FORM 100-PDU-V113
1200
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