[8.25] [6.35] QUARTZ WINDOW (WELDED) 0.030 [0.76] [9.09] 0.035 [0.89]
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PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C119-Q DETECTORS INC.
[8.25] [6.35] QUARTZ WINDOW (WELDED) 0.030 [0.76] [9.09] 0.035 [0.89] VIEWING ANGLE WIRE BONDS 0.168 [4.26] 0.075 [1.91] 0.500 [12.70]
0.200 [5.08] ANODE [0.46] CATHODE [0.46]
PHOTODIODE 0.125 [3.18] 0.113 [2.87] ACTIVE AREA 0.113 [2.87] ACTIVE AREA
HEADER
TO-5 PACKAGE
ACTIVE AREA 7.95
FEATURES High speed U.V. enhanced Quartz window
APPLICATIONS DESCRIPTION PDU-C119-Q silicon, planar Spectrometers diffused, U.V. enhanced photodiode. Ideal Fluorescent analysers high speed photoconductive U.V. applica- U.V. meters tions.Packaged TO-5 metal with Colorimeters flat quartz window cap. SPECTRAL RESPONSE
RESPONSIVITY (A/W)
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +150 +125 +240
1000 1100 1200
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance
mW/cm
UNITS
l=350
Peak
range
Spectral Application Range Spot Scan Responsivity Breakdown Voltage Noise Equivalent Power Response Time
1100 2.2x10
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice. [FORM 100-PDU-C119-Q
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