[8.25] [6.35] [9.09] 0.035 [0.89] HEADER PHOTODIODE 0.235 [5.97] ACTIV

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[8.25] [6.35] [9.09] 0.035 [0.89] HEADER PHOTODIODE 0.235 [5.97] ACTIV

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PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C114-Q DETECTORS INC.
[8.25] [6.35] [9.09] 0.035 [0.89] HEADER PHOTODIODE 0.235 [5.97] ACTIVE 0.123 [3.12] AREA 0.135 [3.43] 0.223 [5.66] ACTIVE AREA VIEWING ANGLE QUARTZ WINDOW (WELDED) 0.030 [0.76] WIRE BONDS 0.168 [4.26] 0.075 [1.91] 0.500 [12.70]
0.200 [5.08] ANODE [0.46] CATHODE [0.46]
TO-5 PACKAGE
ACTIVE AREA 17.74
FEATURES High speed U.V. enhanced capacitance Quartz window
APPLICATIONS DESCRIPTION PDU-C114-Q silicon, planar Spectrometers diffused, U.V. enhanced photodiode. Ideal Fluorescent analysers high speed photoconductive applications. U.V. meters Packaged TO-5 metal with flat Colorimeters quartz window. SPECTRAL RESPONSE
RESPONSIVITY (A/W)
1000 1100 1200
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +150 +125 +240
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance 2850 Peak
UNITS
range
Spectral Application Range Spot Scan Responsivity Breakdown Voltage Noise Equivalent Power Response Time
1100 3.8x10
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice. [FORM 100-PDU-C114-Q N/C]

[8.25] [6.35] [9.09] 0.035 [0.89] HEADER PHOTODIODE 0.235 [5.97] ACTIV

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