INDICATES ANODE 0.140 [3.56] 0.070 [1.78] 0.224 [5.69] WIRE BONDS PHOT

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INDICATES ANODE 0.140 [3.56] 0.070 [1.78] 0.224 [5.69] WIRE BONDS PHOT

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PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C113 DETECTORS INC.
INDICATES ANODE 0.140 [3.56] 0.070 [1.78] 0.224 [5.69] WIRE BONDS PHOTODIODE 120° VIEWING ANGLE 1.50 [38.1] ANODE 0.200 [5.08] [0.51] OPTICAL EPOXY 0.125 [3.18] SQUARE CATHODE CERAMIC
[6.73]
0.113 [2.87] ACTIVE AREA
CERAMIC PACKAGE
ACTIVE AREA 7.95
FEATURES High speed capacitance U.V. enhanced dark current
DESCRIPTION PDU-C113 silicon, planar diffused, U.V. enhanced photodiode. Ideal high speed photoconductive applications. Packaged lead ceramic substrate with clear U.V. transmitting epoxy glob top.
RESPONSIVITY (A/W)
APPLICATIONS U.V. exposure meter Water purification Fluorescence U.V. meters SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +100 +240
1000
1100
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance 2850 2.2x10
UNITS
1100
range
Spectral Application Range Spot Scan Responsivity Breakdown Voltage Noise Equivalent Power Response Time Peak
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice. [FORM 100-PDU-C113
1200

INDICATES ANODE 0.140 [3.56] 0.070 [1.78] 0.224 [5.69] WIRE BONDS PHOT

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