ACTIVE AREA (100 Enhanced Photoconductive Type PDU-C112-Q 0.
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PHOTONIC Silicon Photodiode, U.V. DETECTORS INC.
ACTIVE AREA (100
Enhanced Photoconductive Type PDU-C112-Q
0.175 [4.45] 0.073 [1.85] PHOTODIODE ACTIVE SURFACE WINDOW BLACK EPOXY HOUSING
PACKAGE DIMENSIONS inch (mm)
QUARTZ WINDOW WIRE BONDS 104° VIEWING ANGLE
SOLDER PHOTODIODE CHIP 0.400 [10.16] 1.045 [26.54] CATHODE CONNECTOR, ANODE
CONNECTOR PACKAGE
ACTIVE AREA .4447 (11.295)
FEATURES High speed U.V. enhanced capacitance Quartz window
DESCRIPTION PDU-C112-Q large area, instrumentation grade, U.V. enhanced silicon photodiode. Designed capacitance high speed photoconductive applications. Packaged connector package.
APPLICATIONS Instrumentation Power meters Colorimeters Laser power meters
RESPONSIVITY
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
Imax Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current
SPECTRAL RESPONSE
1000 1100 1200
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25 unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
lrange Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance 2850 1.5x10
UNITS
1100
Spectral Application Range Spot Scan Responsivity Breakdown Voltage Noise Equivalent Power Response Time Peak
N/C]
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice. [FORM 100-PDU-C112-Q
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