0.592 [15.04] 0.409 [10.39] SQUARE WIRE BONDS NOTCH INDICATES ANODE QU

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0.592 [15.04] 0.409 [10.39] SQUARE WIRE BONDS NOTCH INDICATES ANODE QU

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PHOTONIC Silicon Photodiode, U.V. Enhanced Photoconductive Type PDU-C110-Q DETECTORS INC.
0.592 [15.04] 0.409 [10.39] SQUARE WIRE BONDS NOTCH INDICATES ANODE QUARTZ WINDOW WHITE CERAMIC 0.650 [16.51] ANODE 120° VIEWING ANGLE 0.484 [12.29] 0.080 [2.03] 0.50 [12.7]
PHOTODIODE CHIP [0.43] PLACES
CERAMIC PACKAGE ACTIVE AREA 100.00
CATHODE
FEATURES High speed U.V. enhanced capacitance Quartz window
DESCRIPTION PDU-C110-Q silicon, planar diffused, U.V. enhanced photodiode. Ideal high speed photoconductive applications. Packaged profile ceramic substrate with flat quartz window.
APPLICATIONS Spectometers Fluorescent analysers U.V. meters Colorimeters SPECTRAL RESPONSE
RESPONSIVITY (A/W)
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted) SYMBOL PARAMETER UNITS
TSTG Reverse Voltage Storage Temperature Operating Temperature Range Soldering Temperature* Light Current +220
1000 1100 1200
*1/16 inch from case secs
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted) SYMBOL CHARACTERISTIC TEST CONDITIONS
Short Circuit Current Dark Current Shunt Resistance Temp. Coefficient Junction Capacitance 2850 1.5x10
UNITS
1100
range
Spectral Application Range Spot Scan Responsivity Breakdown Voltage Noise Equivalent Power Response Time Peak
Information this technical data sheet believed correct reliable. However, responsibility assumed possible inaccuracies omission. Specifications subject change without notice.**f [FORM 100-PDU-C110-Q N/C]

0.592 [15.04] 0.409 [10.39] SQUARE WIRE BONDS NOTCH INDICATES ANODE QU

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